• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.167-167
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• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

• 한국세라믹학회지
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• 제37권7호
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• 한국표면공학회지
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• 제29권5호
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• pp.437-442
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• 1996

High quality $YBa_2Cu_3O_y$(YBCO) thin films for directly coupled dc superconducting quantum interference device (SQUID) were fabricated by pulsed laser deposition. Several critical parameters have been optimized through systematic studies. Thus, the films showing the $T_c$ of above 91K and $J_c$ of above$2\times10^6A/cm^2$ at 77K were routinely obtained. Extensive AFM and X-ray diffraction studies have been conducted for morphological and structural analyses. The directly coupled DC-SQUIDs were fabricated from the YBCO thin films deposited on $SrTiO_3$ bicrystals under the optimized conditions. The measurement on $2I_c$ and swing voltage give 200$\mu$A and 17$\mu$V at 77K, respectively.

• Journal of Electrochemical Science and Technology
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• 제15권3호
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• pp.345-352
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• 2024

The synthesis of Pt nanoparticles and catalytically active materials using the electrochemical top-down approach involves dispersing Pt electrodes in an electrolyte solution containing alkali metal cations and support material powder using an alternating pulsed current. Platinum is dispersed to form particles with a predominant crystallographic orientation of Pt(100) and a particle size of approximately 7.6±1.0 nm. The dispersed platinum particles have an insignificant content of PtO_x phase (0.25±0.03 wt.%). The average formation rate was 9.7±0.5 mg cm^-2 h^-1. The nature of the support (carbon material, metal oxide, carbon-metal oxide hybrid) had almost no effect on the formation rate of the Pt nanoparticles as well as their crystallographic properties. Depending on the nature of the support material, Pt-containing catalytic materials obtained by the electrochemical top-down approach showed good functional performance in fuel cell technologies (Pt/C), catalytic oxidation of CO (Pt/Al₂O₃) and electrochemical oxidation of methanol (Pt/TiO₂-C) and ethanol (Pt/SnO₂-C).

• 한국진공학회지
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• 제17권1호
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• pp.28-33
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• 2008

R.F 마그네트론 스퍼터링 방법을 이용하여 Indium tin oxide(ITO)가 증착된 유리기판 위에 PLZT ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) 박막을 제작하였다. 기판온도를 $500^{\circ}C$로 고정하여 증착한 후 급속열처리 방법으로 다양한 온도 ($550-750^{\circ}C$)에서 후열처리 하였다. 후열처리온도의 변화에 따른 PLZT 박막의 결정학적 특성을 X선 회절법을 통하여 분석하였고 원자간력 현미경을 이용하여 박막의 표면 상태를 관찰하였다. 또한 precision material analyzer 을 이용하여 분극이력곡선과 피로특성을 측정하였다. 후 열처리 온도가 증가함에 따라 잔류분극 값(Pr)은 $10.6{\mu}C/cm^2$ 에서 $31.4{\mu}C/cm^2$로 증가하였으며 항전계(Ec)는 79.9 kV/cm에서 60.9 kV/cm로 감소하는 경향을 보였다. 또한 피로특성의 경우 1MHz 주파수에서 ${\pm}5V$의 square wave를 인가하여 측정한 결과 $700^{\circ}C$에서 후열처리한 시편의 경우 $10^9$회 이상의 분극반전을 거듭하였을 때 분극값이 15% 감소하는 결과를 나타내었다.

• Restorative Dentistry and Endodontics
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• 제42권1호
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• pp.54-59
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• 2017

Objectives: The purpose of this study was to compare the antibacterial activity of urushiol against Enterococcus faecalis (E. faecalis) to that of NaOCl. Materials and Methods: The canals of thirty two single rooted human teeth were instrumented with Ni-Ti files (ProTaper Next X1, X2, X3, Dentsply). A pure culture of E. faecalis ATCC 19433 was prepared in sterile brain heart infusion (BHI) broth. The teeth were submerged in the suspension of E. faecalis and were incubated at $37^{\circ}C$ for 7 days to allow biofilm formation. The teeth were randomly divided into three experimental groups according to the irrigant used, and a negative control group where no irrigant was used (n = 8). Group 1 used physiologic normal saline, group 2 used 6% NaOCl, and group 3 used 10 wt% urushiol solution. After canal irrigation, each sample was collected by the sequential placement of 2 sterile paper points (ProTaper NEXT paper points, size X3, Dentsply). Ten-fold serial dilutions on each vials, and 100 µL were cultured on a BHI agar plate for 8 hours, and colony forming unit (CFU) analysis was done. The data were statistically analyzed using Kruskal-Wallis and Mann-whitney U tests. Results: Saline group exhibited no difference in the CFU counts with control group, while NaOCl and urushiol groups showed significantly less CFU counts than saline and control groups (p < 0.05). Conclusions: The result of this study suggests 10% urushiol and 6% NaOCl solution had powerful antibacterial activity against E. faecalis when they were used as root canal irrigants.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.19-23
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• 2018

In a Pb-included piezoelectric composition, $Sr_yPb_{1-y}[(Zn_{1/3}Nb_{2/3})_x-(Ni_{1/3}Nb_{2/3})_{0.2}-(Zr_{0.46}Ti_{0.54})_{0.8-x}]O_3$ was selected in order to attain high piezoelectric properties. According to the PZN ratio (x) and the amount of Sr doping (y), the crystal structure, microstructure and piezoelectric properties were measured and evaluated. In the case of Sr 4 mol% doping, the piezoelectric properties were the highest for a PZN ratio of 0.1. In this condition, the grain size was larger and the intensity was higher. With the PZN ratio fixed and varying the Sr doping, the piezoelectric properties increased until 10 mol% doping and then decreased for over 12 mol% doping. In the case of x＝0.1 and y＝10 mol%, the best piezoelectric properties were obtained, i.e., $d_{33}=660pC/N$ and $k_p=68.5%$, and these values seem to be related to the grain size and crystal structure.

• 대한전자공학회논문지SD
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• 제40권9호
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• pp.631-637
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• 2003

Pt/TiO/sub x/SiO₂/Si 기판 위에 1,3-propanediol 을 이용해 sol-gel 법으로 제작한 PZT(30/70) 후막의 구조적 및 전기적, 강유전 특성에 대하여 조사하였다. 열처리 공정은 열 응력 (thermal stress) 를 줄이기 위해 RTA를 사용하였고, 최종적으로 650℃의 로(furnace)에서 어닐링하였다. SEM 분석 결과 1회 코팅에 330nm 의 두께를 얻었으며, 3회 코팅으로 약 1 μm 정도의 두께를 얻었다. C-D 측정결과, 1 kHz에서 비유전률과 유전손실은 각각 886 과 0.03 이었다. C-V 곡선은 좌우 대칭인 나비모양을 나타내었다. 누설전류밀도는 200kV/cm 에서 1.23×10/sup -5/A/cm²이었으며, 이력곡선으로부터 구한 잔류분극 (P/sub r/) 과 항전계(E/sub c/) 는 각각 33.8μC/cm²과 56.9kV/cm 이었다. 결론적으로 본 연구에서 제작된 PZT(30/70) 후막은 우수한 강유전 및 전기적 특성을 보였다.

• Journal of Nutrition and Health
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• 제14권2호
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• pp.97-104
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• 1981

Bacillus natto 및 Bacillus subtilis균(菌)을 이용(利用)한 청국장메주 제조(製造)와 재래식방법(在來式方法)에 의(依)한 청국장메주 발효과정중(醱酵過程中)의 성분(成分)과 효소력(酵素力)을 비교검토(比較檢討)한 결과(結果)는 다음과 같다. 1) 발효초기(醱酵初期)의 품온(品溫)이 $50{\sim}55^{\circ}C$였으나 12시간후(時間後)에 B. natto와 B. subtilis구(區)는 $48{\sim}52^{\circ}C$였고 재래식구(在來式區)는 $40^{\circ}C$였다. 72시간경(時間頃)에는 $41{\sim}48^{\circ}C$로 시험구(試驗區)에 따라서 품온(品溫)의 저하(低下)가 심하였다. 2) ethyl alcohol과 환원당(還元糖)은 12시간경(時間頃)에 최대치(最大値)을 나타핀후에 감소(減少)하는 경향이었으며 시험구간(試驗區間)외 차이(差異)는 거이 없었다. 3) pH는 시험구(試驗區) 모두 발효(醱酵) 12시간(時間)까지는 6.0이던 것이 72시간경(時間頃)에는 8.2이상(以上)으로 나타났고 적정산도(滴定酸度)는 발효초기(醱酵初期)에 최대치(最大値)를 나타였다. 4) 아미노실소(室素)와 수용성실소함량(水溶性室素含量)은 결시적(經時的)으로 증가(增加)하는 경향(傾向)으로서 B. natto구(區), 재래식구(在來式區), B. subtilis구(區)의 순(順)으로 높았다. 5) Amylase와 protease의 활성(活性)은 경시적(經時的)으로 불규칙적(不規則的)인 변화(變化)를 보였고 시험구간(試驗區間)의 차이(差異)가 없었으나 효소활성(酵素活性)은 대체(大體)로 미약(微弱)하였다. 본(本) 실험(實驗)에저 B.natto구(區)가 청국장매주 제조(製造) 균주(菌株)로서 성분(成分)과 관능면(官能面)에서 우수(優秀)하였다.0일이었다.환경적응성이 낮은 경향이었다.은 모두 경운 유 ㆍ무에 관계없이 시비수준이 높을수록 높은 경향을 보였고, 10일에 최고수준을 보인 후 완만한 감소를 나타냈으며, $K^{+}$, $Ca^{2+}$에 비해 $Mg^{2+}$이 보다 낮은 함량을 보였다.989년산 일반계를 10분도와 12분도로 도정하였을 때 도정도에 따른 밥맛의 차이는 없었다.X>$CoO_x$는 $Co_3O_4$로 존재하고, 반응 전의 경우에는 이와는 다른 chemical state를 보여주었다. XRD 및 XPS 결과를 바탕으로, 촉매표면에 존재하는 $Co_3O_4$의 외부표면이 $Co_2TiO_4$와 $CoTiO_3$ 같은 $CoTiO_x$로 encapsulation되어 있는 모델구조를 제안할 수 있고, 이는 반응시간의 함수로 나타나는 촉매활성에 있어서 전이영역의 존재를 잘 설명할 수 있을 뿐만 아니라, XRD와 XPS에서 얻어진 촉매의 물리화학적인 특성을 잘 반영할 수 있다. 나타냈고, 골격근과 눈 조직에서 피루브산에 대한 LDH의 친화력이 상당히 크므로 LDH가 혐기적 조건에서 효율적으로 기능을 하는 것으로 사료된다.5) and "Cleanliness of clothes ＆ features" (p ＜0.05) of VIP ward were significantly higher than those of a general ward.tive to apply.아울러 고려(考慮)해야 한다. 이것은 고무기술자(技術者)가 당면(當面)해야할 과제(課題)에 속(屬)하며 바람직 한것은 본장(本章)의 내용(內容)이 여러 상황하(狀況下)에서 당면(當面)한 문제(問題)에 대(對)해 어떻게 대처(對處)해 야 할지를 모르는 여러 기술자(技術者)들에게

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.123-129
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• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.