• Title/Summary/Keyword: $TiC_x$

Search Result 1,459, Processing Time 0.031 seconds

catalyst-free 유기금속 화학증착법을 이용한 InN nanorods의 성장

  • Kim, Min-Hwa;Hong, Yeong-Jun;Jeong, Geon-Uk;Park, Seong-Hyeon;Lee, Geon-Hun;Mun, Dae-Yeong;Jeon, Jong-Myeong;Kim, Mi-Yeong;Lee, Gyu-Cheol;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.126-126
    • /
    • 2010
  • 본 연구에서는 catalyst-free 유기금속 화학증착법 (MOCVD)를 이용하여 사파이어 (0001)면 위에 직접 InN nanorods를 성장하였다. InN 박막의 성장에서 TMIn과 $NH_3$를 전구체로 사용하였으며, 캐리어 가스로는 질소를 사용하였다. 성장 전, 기판에 $1100^{\circ}C$에서 3분간 nitridation 처리를 거친 후 온도를 낮춰 $630{\sim}730^{\circ}C$의 온도범위 에서 InN 박막을 성장하였다. 이때 $710^{\circ}C$의 온도에서 박막은 columnar growth의 특성을 보였으며 동일조건에서 80분간 성장시킨 결과 InN nanorods가 성장되었다. 성장시킨 InN nanorod는 X-선 회절 측정법, 주사 전자 현미경 그리고 투과 전자 현미경을 이용하여 그 특성을 분석하였다. 투과 전자 현미경을 통한 분석결과 지름이 150~200 nm이며 그 길이는 수 ${\mu}m$인 InN nanorod가 성공적으로 성장되었음을 확인하였다. 또한 X-선 회절 측정법과 주사 전자 현미경을 통한 분석에서 이들 nanorods가 대부분 c 방향으로 수직하게 정렬되어 있음을 확인하였다. 또한 Ti/Au (120/80 nm)를 전극으로 사용하여 개개의 nanorod의 전기적 특성을 분석한 결과 linear한 I-V특성이 관찰되었으며 비저항은 평균적으로 $0.0024\;{\Omega}cm$ 이었다. transfer 특성의 측정결과 -50V까지 게이트 전압을 인가하여도 드레인 전류의 변화는 매우 적어 doping level이 상당히 높다고 예상가능하다. 또한 mobility는 $133\;cm^2/Vs$로 도출되었다.

  • PDF

Fabrication of High-T$_c$ Superconducting Josephson Junctions by Ar lon Milling and E-Beam Lithography (Ar 이온빔 식각과 전자선리소그래피 방벙으로 제작한 고온초전도 조셉슨 접합)

  • Lee, Moon-Chul;Kim, In-Seon;Lee, Jeong-O;Yoo, Kyung-Hwa;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
    • /
    • v.9
    • /
    • pp.91-94
    • /
    • 1999
  • A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

  • PDF

Electrical Properties of SrRuO3 Thin Films with Varying c-axis Lattice Constant

  • Chang, Young-J.;Kim, Jin-I;Jung, C.U.
    • Journal of Magnetics
    • /
    • v.13 no.2
    • /
    • pp.61-64
    • /
    • 2008
  • We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

Improvement of Fatigue Properties in Ferroelectric Dy-Doped Bismuth Titanate(BDT) Thin Films Deposited by Liquid Delivery MOCVD System (Liquid Delivery MOCVD로 증착된 강유전체 BDT 박막의 피로 특성 향상)

  • Kang, Dong-Kyun;Park, Won-Tae;Kim, Byong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.171-171
    • /
    • 2007
  • Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

  • PDF

Physicochemical Characterization and Dissolution Properties of CS-891 with Different Crystallinity

  • Lee, Woo-Young;Park, Byoung-Woo;Park, Yong-Sun
    • Journal of Pharmaceutical Investigation
    • /
    • v.35 no.4
    • /
    • pp.279-285
    • /
    • 2005
  • Ground CS-891 (N-[1-(4-methoxyphenyl)-1-methylethyl]-3-oxo-4-aza-5a-androst-1-ene-$17{\beta}$-carboxamide) of poorly water soluble drug was obtained using a Heiko Seisakusho model TI-100 vibration mill, and samples with different crystallinity were prepared at mixture ratios of 10:0, 7:3, 5:5, 3:7 and 0:10 (intact;ground CS-891). Physicochemical characterizations were obtained using qualitative and quantitative X-ray diffractometry, different scanning calorimetry (DSC), scanning electron microscopy (SEM), Quantasorb surface area analyzer, and controlled atmosphere microbalance. With increase of amorphous CS-891 in mixture ratios, the intensities of X-ray diffraction peaks of crystalline CS-891 were decreased, whereas surface area, water absorption, and exothermic peaks in DSC were increased. The apparent solubility of ground CS-891 was $4.4\;{\mu}g/ml$ and the solubility of intact CS-891 was $3.1\;{\mu}g/ml$ at $37{\pm}1^{\circ}C$. The apparent precipitation rates of CS-891 in a supersaturated solution during the solubility test were increased with an increase of amorphous CS-891, and a crystalline form of CS-891 transformed from amorphous CS-891 after the solubility test was found by X-ray diffraction analysis, DSC and SEM. The dissolution profiles of CS-891 with different crystallinity at $37{\pm}1^{\circ}C$ by the USP paddle method were investigated, and the apparent dissolution rate constant of ground CS-891 was about 5.9-fold higher than that of intact CS-891. A linear relationships between the crystallinity of CS-891 and the apparent dissolution rate constant (r>0.96) were obtained.

Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films (SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Jo, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.08a
    • /
    • pp.85-88
    • /
    • 2003
  • $Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

  • PDF

Effect of Seed-layer thickness on the Crystallization and Electric Properties of SBN Thin Films. (SBN 박막의 결정화 및 전기적 특성에 관한 씨앗층 두께의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Cho, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.11a
    • /
    • pp.271-274
    • /
    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

  • PDF

Step-down Piezoelectric Transformer Using PZT PMNS Ceramics

  • Lim Kee-Joe;Park Seong-Hee;Kwon Oh-Deok;Kang Seong-Hwa
    • KIEE International Transactions on Electrophysics and Applications
    • /
    • v.5C no.3
    • /
    • pp.102-110
    • /
    • 2005
  • Piezoelectric transformers(PT) are expected to be small, thin and highly efficient, and which are attractive as a transformer with high power density for step down voltage. For these reasons, we have attempted to develop a step-down PT for the miniaturized adaptor. We propose a PT, operating in thickness extensional vibration mode for step-down voltage. This PT consists of a multi-layered construction in the thickness direction. In order to develop the step-down PT of 10 W class and turn ratio of 0.1 with high efficiency and miniaturization, the piezoelectric ceramics and PT designs are estimated with a variety of characteristics. The basic composition of piezoelectric ceramics consists of ternary yPb(Zr$_{x}$Ti$_{1-x}$)O$_{3}$-(1-y)Pb(Mn$_{1/3}$Nb1$_{1/3}$Sb$_{1/3}$)O$_{3}$. In the piezoelectric characteristics evaluations, at y=0.95 and x=0.505, the electromechanical coupling factor(K$_{p}$) is 58$\%$, piezoelectric strain constant(d$_{33}$) is 270 pC/N, mechanical quality factor(Qr$_{m}$) is 1520, permittivity($\varepsilon$/ 0) is 1500, and Curie temperature is 350 $^{\circ}C$. At y = 0.90 and x = 0.500, kp is 56$\%$, d33 is 250 pC/N, Q$_{m}$ is 1820, $\varepsilon$$_{33}$$^{T}$/$\varepsilon$$_{0}$ is 1120, and Curie temperature is 290 $^{\circ}C$. It shows the excellent properties at morphotropic phase boundary regions. PZT-PMNS ceramic may be available for high power piezoelectric devices such as PTs. The design of step-down PTs for adaptor proposes a multi-layer structure to overcome some structural defects of conventional PTs. In order to design PTs and analyze their performances, the finite element analysis and equivalent circuit analysis method are applied. The maximum peak of gain G as a first mode for thickness extensional vibration occurs near 0.85 MHz at load resistance of 10 .The peak of second mode at 1.7 MHz is 0.12 and the efficiency is 92$\%$.

Metamorphism of the Buncheon and Hongjeas Granitic Gneisses (분천과 홍제사 화강암질 편마암체의 변성작용)

  • 김형수;이종혁
    • The Journal of the Petrological Society of Korea
    • /
    • v.4 no.1
    • /
    • pp.61-87
    • /
    • 1995
  • On the basis of lithology, the Precambrian Hongjesa Granitic Gneiss can be locally zoned into granoblastic granitic gneiss, porphyroblastic granitic gneiss, migmatitic gneiss from its center to the marginal part. There are no distinct differences in mineral assemblages by lithologic zoning, but it partly shows the change of mineral assemblage in the adjacent with migmatitic gneiss, thus mineral assemblage can be subdivided into Zone I and Zone II. In terms of mineral compositions, the characteristics of Zone I are coexisting K-feldspar+muscovite+sillimanite. The characteristics of Zone II are (1) breakdown of muscovite, (2) coexisting garnetScordierite, (3) coexisting garnet+cordierite + orthoamphibole. The Buncheon Granitic Gneiss is mainly composed of augen gneiss. In the adjacent area with Honjesa Granitic Gneisses, Buncheon Granitic Gneiss has the mineral assemblage of sillimanite+biotite+K-feldspar+(kyanite). Kyanite occurs as relict grains in the Buncheon and Hongjesa Granitic Gneissess. Kyanite shows anhedral to subhedral form and coexists with sillimanite in only one of these samples. Garnet from a migmatitic gneiss (Zone 11) has relatively high $X_{Fe}$ value in core and rim. Garnet from a porphyroblastic granitic gneiss(Zone I) has relatively homogemeous core but compositionally-zoned rim. Biotites show various colour from greenish-brown, brown to reddish brown at maximum adsorption. Also, the Ti, and Mg content in biotites increases from Zone I to Zone II. The plagioclases shows the chemical composition of $Ab_{84}An_{16}$ -$Ab_{70}An_{30}$ (oligoclase) in Zone I and $Ab_{70}An_{30}$ -$Ab_{50}An_{50}$(andesine) in Zone 11. These variations indicate that the gneisses in the study area experienced a upperamphibolite facies. The presence of kyanite as relict grains indicates that the metamorphic rocks in this area exprienced a high-temperature/medium-pressure type metamorphism, followed by high-temperaturellow-pressure metamorphism. Metamorphic P-T conditions for each gneiss estimated from various geothermobarometers and phase equilibria are 698-$729^{\circ}C$/6.3-11.3 kbar in augen gneiss, 621-$667^{\circ}C$/1.0-5.4 kbar in migmatitic gneiss, and 602-$624^{\circ}C$/1.9-3.4 kbar in porphyroblastic granitic gneiss. These data suggest that the study area was subjected to a clockwise P-T path with isothermal decompression (dP/dT=about 60 bar/$^{\circ}C$).

  • PDF

The Study on Preparation and Characterization of Yellow Ceramic Pigment (황색세라믹안료의 제조 및 특성연구)

  • Kwon, Myon-Joo;Ha, Jin-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.19 no.7
    • /
    • pp.504-509
    • /
    • 2018
  • The purpose of this study was to manufacture a high-performance titanium yellow pigment. Anatase type $TiO_2$ was the skeleton of the pigment and $Sb_2O_3$ is used as the color assistant for the coloring agent, $Cr_2O_3$. Mixed raw materials for the pigment were $TiO_2$(98%), $Sb_2O_3$(99.5%), and $Cr_2O_3$(99.5%). The raw materials were mixed by a dry process and crystallized by calcination at $1,000{\sim}1,200^{\circ}C$. The crystalline material was pulverized in a Jar Mill under $1{\mu}m$ by a wet process and dried for 12 hours at $100^{\circ}C$. The pigment was finally made by a fine grinding process. To determine the best temperature for calcination, 4 temperature sections ($1000^{\circ}C$, $1100^{\circ}C$, $1150^{\circ}C$, and $1200^{\circ}C$) were set up. The X-ray diffraction peak of the rutile crystalline structure was highest at $1,150^{\circ}C$. The yellow ceramic pigment, which has the rutile structure, was applied for coating materials. The synthesized pigments underwent a discoloration tests on the acid resistance, alkaline resistance, weather resistance and heat resistance. In addition, a detection test on harmful heavy metals ($Cr^{+6}$) was done. The resulting values (${\Delta}E$) of the weather resistance test (2000hr), acid resistance test, alkaline resistance test, and heat resistance test were 0.74, 0.16, 0.07 and 0.29. The resulting value for heavy metals testing was 34ppm.