• Current Applied Physics
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• v.18 no.11
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• pp.1422-1425
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• 2018

$NaTa_{1-x}Fe_xO_3$ ($0{\leq}x{\leq}0.40$) nanocubes were synthesized by a relatively low temperature hydrothermal method, using $Ta_2O_5$, $FeCl_3$ and NaOH as the precursors. The UV-vis diffuse reflectance spectra showed that $NaTa_{1-x}Fe_xO_3$ had significant visible-light-absorbing capability, and the absorption edge of $NaTaO_3$ shifted to longer wavelength with the increase of Fe dopants. Moreover, $NaTa_{1-x}Fe_xO_3$ exhibited room-temperature ferromagnetism when $Fe^{3+}$ occupied $Ta^{5+}$ sites in $NaTaO_3$ crystal lattice. The ferromagnetism is mainly attributed to the superexchange interactions between doped $Fe^{3+}$, rather than the contribution of oxygen vacancies caused by Fe doping. Therefore, Fe doping can simultaneously regulate the optical and magnetic properties of $NaTaO_3$ semiconductor, which will enable its potential applications in multifunctional optical-electronics and opticalspintronics devices.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.233-239
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• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.867-872
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• 2012

In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric actuators application, $Li_{0.04}(Na_{0.50}K_{0.50})_{0.96}[(Nb_{0.86}Ta_{0.10}Sb_{0.04})_{0.994}Co_{0.015}]O_3+0.0025SrO+0.15\;wt%K_2CO_3+x\;wt%Nb_2O_5$ (x = 0 - 0.5 wt%) (abbreviated as LNKNTSCS-xN) ceramics were fabricated by a conventional sintering technique. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the $Nb_2O_5$ content. High electrical properties of $d_{33}$=234 pC/N, kp=0.392, ${\varepsilon}_r$=1,395, ${\rho}=4.70g/cm^3$ were obtained from the specimen with x=0.4 wt%, which suggests that the composition ceramics is a promising lead-free piezoelectric material.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.196-201
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• 2001

The dependence of CoFe interfacial layer thickness and plasma oxidation condition on tunneling magnetoresistance (TMR) in Ta/NiFe/FeMn/NiFe/Al$_2$O$_3$/NiFe/Ta tunnel junctions was investigated. As the CoFe layer thickness increases, TMR ratio rapidly increases to 13.7 % and decreases with further increase of the CoFe layer thickness. The increase of TMR with the CoFe thickness up to 25 was thought to be due mails to the high spin-polarization of CoFe. The maximum MR of 15.3% was obtained in the Si(100)/Ta(50 )/NiFe(60 )/FeMn(250 )/NiFe(70 )/Al$_2$O$_3$/NiFe(150 )/Ta(50 ) magnetic tunnel junction with a 16 Al oxidized for 40 sec using a Ar/O$_2$ (1:4) mixture gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.116-119
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.526-526
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• 1996

The single crystal of LiTaO3 is well known eletro-optic material as well as the piezoelectric one applied to SAW filter. LiTaO3 has large electro-optic effects, so applied to optical switch, acosto-optic deflector, and optical memory device using photorefractive effects. The crystal growth of SAW-grade LiTaO3 has been studied many aspects, but there is no detail research about optic-grade crystal growth. The conditions of optic-grade LiTaO3 single crystal are as below. The optical transmittance must be over 75%, and axial and radial concentratiom uniformity below 1%. The variation of Curie temperature depending on Li/Ta ratio must be also below 2$^{\circ}C$ and no internal no internal cracks and defects. Because of the limitation of crystal quality, the growing of optic-grade LiTaO3 single crystal is very difficult compared with the growing of SAW-grade. In this research, upper conditions of optic-grade single crystal was investigated after growing of 1 inch diameter and 1.5 inch length LiTaO3 single crystal having no internal cracks and defects using Czochralski method. Curie temperature was determined with DSC and measuring capacitance and lattice parameter was calculated about the grown crystal and ceramic powder samples of various Li/Ta ratio. The result of Tc variation was below 1.2$^{\circ}C$ all over the grown crystal, so it is confirmed that LiTaO3 was grown under congruent melting composition having optical homogeniety. Also, the optical transmittance was about 78%, which was sufficient for optical device.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.242-245
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• 1996

The microstructure of $Ba (Zn_{1/3}Ta_{2/3})O_3$ (BZT) was investigated using X-ray diffractometry(XRD) and transmission electron microscopy (TEM). $Ba_{0.5}TaO_3$ and $Ba_3TaO_{5.5}$ (BT) phasses were observed on the surface of the sintered specimen by XRD. Furthermore, a new type of ordering along the [110] direction was found in sintered specimen by the XRD and TEM analysis. The wavelength of ordering was 0.9 nm which is three times larger than the interplanar distance of (110) plane and new type of ordering is considered to be a result of Zn vacancy ordering. The creation of Zn vacancies and formation of BT phases are attributed to the evaporation of volatile ZnO. A new mechanism for ZnO loss is suggested. In this mechanism, only Zn vacancies are created only when the amount of ZnO loss is small and as the amount of ZnO loss increases, BT phases are formed at the same time. A new unit cell of ordered structure is suggested as the superlattics containing three BZT unit cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.22.2-22.2
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• 2006

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.15-20
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• 1996

The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFET to vary with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing tile drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about $70{\AA}$ thick by sol-gel method on $Si_{3}N_{4}/SiO_{2}$-gate of pH-ISFET. The fabricated $Ta_{2}O_{5}$-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH $3{\sim}11$, and had relatively small average pH drift of about 0.06 pH/day.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.485-492
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• 2000

The sintering characteristics and the effects of density on dielectric properties in 0.2Ba(Mg$_{1}$3(Nb$_{2}$3/)O$_3$-0.8Ba(Mg$_{1}$3//Ta$_{2}$3/)O$_3$ceramics were investigated. The samples were made by the powder mixing techniques with the two step calcining conditions. When the 1st and the 2nd calcining temperatures were 120$0^{\circ}C$ and the sintering temperature was 155$0^{\circ}C$the density of samples showed the highest value (7.45 g/cm$^3$, 98.5% of theoretical density) among them. The dielectric constant of samples was nearly independent of density but the tan $\delta$ and the temperature coefficient of dielectric constant decreased linearly with increasing of the density. The quality factor(Q$\times$f), the temperature coefficient of resonance frequency and the dielectric constant of Ba[Mg$_{1}$3(Nb$_{0.2}$/Ta$_{0.8}$)sub 2/3/]O$_3$ceramic were 79,548 GHz, +1.5 ppm/$^{\circ}C$ and 26 in the microwave range, respectively.ely.