• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

• Journal of the Korean Chemical Society
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• v.37 no.7
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• pp.683-686
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• 1993

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.244-247
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• 2002

NdBaCuO thin films were prepared on $SrTiO_{3}$ substrates by RF magnetron sputtering. These as-grown films were classified into 3type. The resistivity of the deposited films are usually lower than of the YBCO film. The Tc (onset) and Tc (R=0) in the optimized thin films are as high as 90 and 80K, respectively. These as-grown films are highly uniform and semi-trans parent and have a room temperature resistivity of $0.3m{\Omega}cm$.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.37-43
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• 1999

Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of $SiO_2-TiO_2-Bi_2O_3$-$Bi_2O_3$-RO system(RO:BaO -CaO-SrO) crystallizable glass and $Al_2O_3$as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film $B_2O_3$addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the $B_2O_3$ content, and completely disappeared with 14 vol% $B_2O_3$addition. With additions of $B_2O_3$, $\varepsilon_{r}$ decreased abruptly, Q$\times$f value increased largely and the $\tau_f$ value of the material quickly shifted to positive one.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.403-409
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• 1999

The dielectric and pyroelectric properties of $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) thin films growtn on Pt/Ti/NON/Si us-ing RF magnetron sputtering have been investigated. With increasing the substrate temperature during de-position of the BST film in the range of 300-$600^{\circ}C$ the dielectric and pyroelectric constants of the film were increased due to improved crystallinity of the film. In addition the dependence of the microstructural and electrical properties of BST films onthe deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BST films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BSt films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrodes. and thus so were the pyrolelectric pro-perties of the BST film. The highest value of pyroelectric coefficient at room temperature obtained in this work was $nCcm^{-2}K^{-1}$ which is much higher than those previously reported on other perovskite fer-roelectric thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.198-199
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• 2008

페로브스카이트 구조의 (Ba,Sr,Ca)$TiO_3$ 분말에 $Y_2O_3$ 불순물을 첨가하여 첨가량에 따른 영향을 연구하였다. 시편의 제작은 Screen-printing을 이용하여 후막으로 제작하였으며, 구조적인 특성과 함께 유전적 특성을 관찰하였다. XRD 회절 운석을 통하여 $Y_2O_3$ 가 첨가된 모든 시편에서 전형적인 페로브스카이트 구조를 나타내는것을 알 수 있었다. 시편의 미세구조를 관찰한 결과 grain size 는 $Y_2O_3$ 첨가량이 증가 할수록 감소하였으며, 기공은 증가하는 것을 알 수 있었다. 후막의 두께는 $Y_2O_3$ 첨가량에 영향을 받지 않았으며 평균 두께는 $60{\mu}m$이었다. 유전상수는 $Y_2O_3$ 첨가량에 따라 감소하였으며, 유전손실은 모든 시편에서 1%이하의 양호한 값을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.7-12
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• 1990

The influence of MnO2 on the sintering property and PTCR behavior of(Ba0.8Sr0.2)TiO2 has been investigated. And the densities, grain sizes and electrical resitivities of specimens were measured as a function of doping with Mn ion of varying concentration. The density and grain size of the sintered specimens were almost the same regardless of MnO2 addition up to 0.2mol% MnO2. But in the case of 0.25mol% MnO2 addition, abnormal grain growth was appeared. So the grain size distribution was wide and density decreased greatly. The room-temperature resistivity increased as Mn content increased and the temperature coefficient of resistivity was highest in the case of 0.15mol% MnO2 addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.132-135
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.