• Title/Summary/Keyword: $SrTiO_3$$BaTiO_3$

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Structural and Electrical Properties of (Ba,Sr,Ca)TiO3 Thick Films doped with Dy 2O3 (Dy2O3를 첨가한 (Ba,Sr,Ca)TiO3 후막의 구조 및 전기적 특성 연구)

  • Noh, Hyun-Ji;Park, Sang-Man;Yun, Sang-Eun;Lee, Sung-Gap
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.8
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    • pp.680-684
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    • 2007
  • In this study, we investigated the effects of structural and electrical properties of $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ thick films with variation $Dy_2O_3$ contents. $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ powders, prepared by the sol-gel method, were mixed organic vehicle. The BSCT thick films doped with 0.1, 0.3, 0.5, 0.7 mol% $Dy_2O_3$ were fabricated by the screen-printing techniques on the alumina substrates and the structural and dielectric properties were investigated with variation of $Dy_2O_3$ doping contents. All BSCT thick films were sintered at $1420^{\circ}C$, for 2hr. In the TG-DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $670 ^{\circ}C$. In the XRD analysis, all BSCT thick films showed the cubic perovskite structure. The average thickness of BSCT thick films was approximately $65{\mu}m$. The Curie temperature decreased with increasing $Dy_2O_3$ amount. The relative dielectric constant and dielectric loss of BSCT thick films doped with $Dy_2O_3$ 0.1 mol% were 6267 and 2.6 %, respectively.

Growth and dielectric Properties or $BaTiO_3/SrTiO_3$ oxide artificial superlattice deposited by pulsed laser deposition (PLD) (Pulsed laser depostion (PLD)법으로 증착된 $BaTiO_3/SrTiO_3$ 산화물 초격자의 성장 및 유전특성)

  • 김주호;김이준;정동근;김용성;이재찬
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.166-170
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    • 2002
  • Artificial $BaTiO_3$(BTO)/$SrTiO_3$(STO) oxide superlattice have been deposited on MgO (100) single crystal substrate by pulsed laser deposition(PLD) method. The stacking periodicity of BTO/STO superlattice structure was varied from $BTO_{1\;unit\; cell}/STO_{1\;unit\; cell}$ to $BTO_{125\;unit\; cell}/STO_{125 \;unit \;cell}$ thickness with the total thickness of 100 nm. The result of X-ray diffraction showed the characteristics of superlattice in the BTO/STO multilayer structure. we have also confirmed that there was no interdiffusion at the interface between BTO and STO layers by high resolution transmission electron microscopy(HRTEM). The dielectric constant of superlattice increased with decreasing stacking periodicity of the BTO/STO superlattice within the critical thickness. The dielectric constant of the BTO/STO superlattice reached a maximum i.e., 1230 at a stacking perioicity of $BTO_{2\;unit\; cell}/STO_{2\;unit\; cell}$ .