• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.46-46
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• 2006

$SrTiO_3$ was annealed at two different annealing times (1 h and 16 h) to investigate the annealing effect on the grain size and orientation distribution. Electron backscattered diffraction (EBSD) was used to analyze the grain size and grain orientation distributions of the $SrTiO_3$. It is possible to understand the annealing effect on the microstructure evolution, by comparing the grain size and orientation distribution of the $SrTiO_3$ as a function of annealing time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.430-433
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• 2001

The $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1300^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_{3}$ and ilmenite $MgTiO_{3}$ structures were coexisted in the $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics. The dielectric constant$(\varepsilon_{r})$ was increased with addition of Ce. The temperature coefficient of resonant frequency$(\Gamma_{f})$ was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the $0.96MgTiO_{3}-0.04SrTiO_{3}+0.2Ce$ ceramics was near zero, where the dielectric constant, quality factor, and $\Gamma_{f}$ were 20.68, 50,272 and ${-0.5ppm/^{\circ}C}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.430-433
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• 2001

The 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1300$^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures were coexisted in the 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics. The dielectric constant($\varepsilon$$\sub$r/) was increased with addition of Ce. The temperature coefficient of resonant frequency($\tau$$\sub$f/) was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the 0.96MgTiO$_3$-0.04SrTiO$_3$+0.2Ce ceramics was near zero, where the dielectric constant, quality factor, and $\tau$$\sub$f/ were 20.68, 50, 272 and -0.5pm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.282-285
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• 1999

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.429-435
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• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.791-794
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• 1998

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1774-1776
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• 1999

The (1-x)$MgTiO_3-SrTiO_3$ (x=0,0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from $1300^{\circ}C$ to $1600^{\circ}C$, second phase was decreased and grain size was increased. The average grain size of the $0.8MgTiO_3-0.2SrTiO_3$ ceramics sintered at $1600^{\circ}C$ were $3.61{\mu}m$.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.953-955
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• 1999

The (1-x)$MgTiO_3-SrTiO_3$ (x=0. 0.1, 0.2, 0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and BT-TGA. Increasing the sintering temperature from $1300^{\circ}C$ to $1600^{\circ}C$, second phase was decreased and grain size was increased. The average gram size of the 0.8$MgTiO_3-SrTiO_3$ ceramics sintered at $1600^{\circ}C$ were $3.61{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.846-850
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• 2005

[ $SrTiO_3$ ]:Al, Pr red phosphors for FED were synthesized by solid state reaction method. The dependence of their luminescent properties on Sr and Al concentration was investigated. The $SrTiO_3$: Al, Pr phosphors showed the characteristic X-ray diffraction patterns of the perovskite structure. Photoluminescence intensity and lattice constant in $SrTiO_3$: Al, Pr phosphors changed in quite a similar manner with Sr concentration. Photoluminescence intensity increased with increasing lattice constant, and the decrease of photoluminescence intensity and lattice constant occurred in the vicinity of 1 mol Sr concentration.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.284-292
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• 2006

$MgTiO_3{\cdot}CaTiO_3{\cdot}SrTiO_3$ system ceramics (MCST) were synthesized to study the effect of Ca addition amount and Sr substitution on temperature coefficient of resonance sequency. Temperature coefficient of resonance frequency was slightly increased by small amount ($i.e.{\sim}5%$) of Sr substitution. In case of 50% to 75% addition amount of $MgTiO_3$, decrease of quality factor was not observed with increasing dielectric constant.