• Journal of the Korean Ceramic Society
• /
• v.35 no.9
• /
• pp.1002-1005
• /
• 1998

Bismuth titanate thin films were prepared on {{{{ { SrTiO}_{3 } }}(100) and Si(100) substrates by dipping-pyrolysis pro-cess using metal naphthenates as starting materials. crystallinity and in-phase alignment of the films were analyzed by X-ray diffraction $\theta$-2$\theta$ scans and $\beta$ scans (pole-figures) respectively. Highly c-axis-oriented {{{{ { { {Bi }_{4 }Ti }_{3 }O }_{12 } }} thin films with smooth surfaces were obtained after heat treatment at 75$0^{\circ}C$ on {{{{ { SrTiO}_{3 } }}(100) sub-strate while the films grown of Si(100) exhibited polycrstalline characteristics. C-axis oriented film show-ed an epitaxial relationship with the {{{{ { SrTiO}_{3 } }} substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.693-696
• /
• 2001

The (Ba$_{0.3}$Bi$_{0.3}$Sr$_{0.4}$)TiO$_3$[BBST] ceramics were prepared by conventional mixed oxide method. The structural properties of the BBST ceramics with sintering temperature were investigated by XRD, SEM, EDS. In the case of BBST ceramics sintered at 1150~135$0^{\circ}C$, the $Ba_{0.5}$Sr$_{0.5}$TiO$_3$and SrBi$_4$Ti$_4$O$_{15}$ phase were coexisted. The 2$\theta$ value of the BST (110) peaks were shifted to the lower degree at the sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. The grains of the BBST ceramics sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were not appeared. Increasing the sintering temperature, the densities of the BBST ceramics were increased. In the BBST ceramics sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$, the mole ratio of Bi was decreased.d.ed.d.d.d.

• Journal of the Korean Ceramic Society
• /
• v.43 no.7 s.290
• /
• pp.421-426
• /
• 2006

[ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.

• Journal of the Korean Ceramic Society
• /
• v.45 no.6
• /
• pp.358-362
• /
• 2008

$BiFeO_3$ films were hetero-epitaxially grown on $SrTiO_3$ substrate with a various orientation by pulse laser deposition. $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for $BiFeO_3$ thin films grown on $SrTiO_3$ substrate comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

• Korean Journal of Materials Research
• /
• v.14 no.2
• /
• pp.115-120
• /
• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

• Journal of Sensor Science and Technology
• /
• v.18 no.6
• /
• pp.456-461
• /
• 2009

Perovskite-structure $Sr(Ti_{1-x}Fe_x)O_3$ thick films, in which x is 0.4 or 0.6, were prepared by normal ceramic process on alumina substrate. Electrical resistance was measured as a function of thermal treatment condition including atmosphere, time, and temperature. The resistance of $Sr(Ti_{1-x}Fe_x)O_3$ films is lower than those of $SrTiO_3$ or $SrFeO_3$ films. The temperature coefficient of resistance over $550^{\circ}C$ was measured to be 0 for the $Sr(Ti_{1-x}Fe_x)O_3$ films after thermal treatment at $1100^{\circ}C$ in air. The sensing property of the films was also measured as a function of temperature and gas such as $O_2$, CO, $CO_2$, NO and $NO_2$. $Sr(Ti_{1-x}Fe_x)O_3$ films showed a good sensing property for $O_2$, but no sensing signal for CO, $CO_2$, NO and $NO_2$.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.20-20
• /
• 2001

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.2
• /
• pp.334-340
• /
• 1997

Electric and dielectric properties of the $SrTiO_3$films have been studied. The influence of impurities on $SrTiO_3$ films was evaluated to reduce the leakage current density. Acceptor doping, with a small concentration of Fe or Cr, has led to a substantial improvement to $10^{-9}$ order in the leakage current density. The experimental results can be explained by a model in which oxygen vacancies are the key defects responsible for the leakage current. The $SrTiO_3$ film 200 nm in thickness with 5 mol% excess SrO fabricated in $Ar/O_2$ at $550^{\circ}C$ obtained the lowest leakage current density $1.0 {\times} 1.0 A/\textrm{cm}^2$. The improved results can be introduced into the capacitor dielectric of giga bit DRAM memories.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.5
• /
• pp.480-485
• /
• 1999

The $SrTiO_3$ with Al, Pr red phosphor for FED was synthesized by Pechini process using metallic nitrates, ethylene glycol and citric acid. The different particle growth tendency of $SrTiO_3$ phosphor powder was observed at above and below $900^{\circ}C$. Also, luminescent properties were observed under 359 nm excitation of Pr ion. The emission band was shown between 575 nm and 650 nm with 617 nm maximum spectra. Therefore, $SrTiO_3$ with Al, Pr phosphor is applicable to red phosphor of FED.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.6
• /
• pp.410-415
• /
• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.