• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.613-616
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• 2001

The effect of codopants on the electroluminescent properties for SrS-Ce based thin films was studied. The active layer was deposited by electron beam with sulfur The wavelength of eletroluminecence shifted with codopants and their concentrations. The intensity ratio of blue to green were found In the CeP-doped device, but the highest total intensity of luminance showed about 850cd/$m^2$ in the CeCl$_3$+KCL-doped device, which indicates that codopants are playing an important role of luminance. At any device, the luminance was the strongest at 0.2 mol% concentration among the concentration studied, suggesting the existence of optimum concentration. By post-annealing Luminance of most devices was improved, but the shift of wavelength was not observed.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.237-242
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• 2006

Nowadays, LEDs has been applied to the luminescent devices of various fields because of the invention of high efficient blue chip. Recently, especially, the white LEDs composed of InGaN blue chips and a yellow phosphor (YAG:Ce3+) have been investigated extensively. With the exception of YAG:Ce3+ phosphor, however, there are no reports on yellow phosphor that has significant emission in the 450~470 nm excitation range and this LED system is the rather low color rendering index due to their using two wavelength. Hence, we have attempted to synthesize thiogallate phosphors that efficiently under the long wavelength excitation range in the present case. Among those phosphors, we have synthesized Sr2Ga2S5:Eu2+ phosphor by change the host material of SrGa2S4:Eu2+ which is well known phosphor and we investigated the luminescent properties. In order to obtain the harmlessness and simplification of the synthesis process, sulfide materials and mixture gas of 5 % H2/95 % N2 were used instead of the CS2 or H2S gas. The prepared phosphor shows the yellow color peaking at the 550 nm wavelength and it possible to emit efficiently under the broad excitation band in the range of 300~500 nm. And this phosphor shows high luminescent intensity more than 110 % in comparison with commercial YAG:Ce3+ phosphor and it can be applied for UV LED due to excitation property in UV region.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.16-23
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• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2148-2150
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• 2014

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1015-1019
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• 2002

The deposition of $SrGa_2S_4$ thin film phosphors doped with Ce or Eu aiming at application for FEDs has been carried out by a multi-source deposition technique. A $SrGa_2S_4$ phase was formed by annealing process and $SrGa_2S_4$ thin films which were deposited using a $Ga_2S_3/Sr$ flux ratio larger than 50 and annealed in $H_2$S showed luminance and luminous efficiency of about 1700 cd/$m^2$ and 2.95 lm/W, respectively, with (0.13, 0.10) chromaticity in the activation with Ce, and about 4000 cd/$m^2$ and 7.05 lm/W, respectively, with (0.36, 0.60) under excitation with 3 kV and 60A/$cm^2$. The results obtained this experiment demonstrate the potential of $SrGa_2S_4$ thin film phosphors for FED screens.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.115-120
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• 1991

The effect of ZnS buffer layer on the brightness and luminous efficiency of SrS : Ce, Cl thin film EL device is investigated. The driving voltage is 210V for the cell with ZnS buffer layer, but 220V without ZnS buffer layer. The frequency range is 500 Hz-20 kHz. The. brightness is proportional to the product of the frequency and the transferred charge density within measured range. The luminous efficiency is independent on the frequency and/or driving voltage. By using the ZnS buffer layer, the luminescence characteristics of active layer is improved. The experimental data shows 0.12 Im/W of the luminous efficiency for the device with ZnS buffer layer, but 0.061m/W without ZnS buffer layer.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.45-51
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• 2001

고체산화물 연료전지의 삼상 계면의 길이를 증가시키기 위해 Glycine-Nitrate Process(GNP)를 이용하여 환원극 재료인 L $a_{0.5}$S $r_{0.5}$Mn $O_3$(LSM)과 전해질 재료인 C $e_{0.8}$G $d_{0.2}$ $O_{1.9}$(CGO)를 합성하였다. 적당한 합성조건을 찾기 위하여 글리신의 양을 달리하여 분말을 합성한 결과 LSM의 경우 글리신이 양이온 몰수의 2배일 때 perovskite상이 얻어졌으며 비표면적은 34$m^2$/g 이었다. 합성된 LSM과 CGO 분말을 50:50 wt%로 혼합하여 제작된 환원극을 screen-printing법으로 코팅한 후 각각 1200, 1300, 1350 및 140$0^{\circ}C$에서 4시간 동안 소결한 후 80$0^{\circ}C$에서 power density와 양극과전압 등을 측정한 결과 130$0^{\circ}C$에서 소결한 단위전지에서 최대 309 mW/$ extrm{cm}^2$의 power density를 얻을 수 있었다.다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.18-25
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• 1998

G $d_{0.2}$C $e_{0.8}$ $O_{1.9}$(CGO) for electrolyte and L $a_{0.5}$S $r_{0.5}$Mn $O_3$(LSM50) for cathode in Solid Oxide Fuel Cells(SOFC) were synthesized by citrate process. Specimens were prepared with sintering temperatures at 110$0^{\circ}C$, 120$0^{\circ}C$ and 130$0^{\circ}C$, which were fabricated by slurry coating with citric acid contents. Interfacial resistance was measured between cathode and electrolyte using AC-impedance analyzer. With various citric acid content, the degree of agglomeration for the initial particles changed. Also sintering temperature changed the particle size and the degree of densification of cathode. Factors affecting the interfacial resistance were adherent degree of the electrolyte and cathode, distribution of TPB(three phase boundaries, TPB i.e., electrolyte/electrode/gas phase area) and porosity of cathode. By increasing the sintering temperature, particle size and densification of the cathode were increased. And then, TPB area which occurs catalytic reaction was reduced and so interfacial resistance was increased.sed.sed.d.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.4
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• pp.514-519
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• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.1-4
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• 2013

We investigated the effect of Nb substitution for Ru on the structural and magnetic properties of $(Ru_{1-x}Nb_x)\;Sr_2(Sm_{1.4}Ce_{0.6})Cu_2O_z$ Samples. X-ray diffraction measurements indicated that nearly single-phase samples are formed in the range from x = 0 to 1.0. The superconducting transition temperature determined from the inflection in the field-cooled magnetic susceptibility decreased only slightly from $T_c$ = 25 K for x = 0 to $T_c$ = 22 K for x = 1.0, in consistent with the change in room temperature thermopower of the samples. However, the Nb substitution for Ru above x = 0.25 significantly suppressed the weak ferromagnetic component of the field-cooled magnetic susceptibility. It was also found that the Nb substitution for Ru results in an enhanced diamagnetic susceptibility with Nb content above x = 0.5 in both zero field-cooled and field-cooled magnetization measurements, in contrast to the behavior of the samples with $x{\leq}0.5$ in which the diamagnetic susceptibility decreases as the Nb content increases.