• 한국전기화학회:학술대회논문집
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• 2002.07a
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• pp.271-276
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• 2002

고체산화물 연료전지의 구성요소인 전해질의 $(La_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$계의 결정상 및 미세구조특성을 연구하였다. Mg의 첨가량이 증가할수록 Sr의 고용량도 증가하였으며 Sr의 함량이 많으면 2차상인 $LaSrGa_3O_7$상이 생성되었으며 Mg의 첨가량이 증가함에 따라서는 $LaSrGaO_4$상이 생성되었다. $LaSrGaO_4$상이 생성된 경우에는 낮은 전도도를 나타내었으며 $LaSrGa_3O_7$상의 경우에는 전기전도도에 큰 영향을 미치지 않았다. 또한 Sr과 Mg 첨가량의 증가는 grain 성장을 억제하였으며 $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$는 $1000^{\circ}C$에서 0.1S/cm 정도의 전기전도도를 나타내었다.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.48-53
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• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.401-405
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• 2004

Undoped SrB $i_2$T $a_2$O$_{9}$, donor-doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ and acceptor-doped SrB $i_2$(Ta$_{0.99}$Ti$_{0.01}$)$_2$O$_{8.99$ ceramics were prepared and their microstructure, ferroelectric P-E hysteresis and Curie temperature were investigated. Grain size did not influence P-E hysteresis curve in undoped SrB $i_2$T $a_2$O$_{9}$ ceramics. Donor-Doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ ceramics showed more saturated P-E hysteresis curve with larger remanent polarization (P$_{r}$) than undoped SrB $i_2$T $a_2$O$_{9}$ ceramics while acceptor-doped SrB $i_2$(Ta$_{0.99}$Ti$_{0.01}$)$_2$O$_{8.99}$ ceramics led to a pinched P-E hysteresis loop. Larger polarization in donor-doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ ceramics resulted from easier domain wall motion by Sr-vacancies.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.525-530
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• 2011

We investigated the electrical properties the starting material and sintering condition on the laminated PTC thermistor for micro circuit protection. The influences of $BaTiO_3$ powder with the 0.3 and 0.45 ${\mu}m$ size and the electrical characteristics (Ba,Sr)$TiO_3$ sintered at 1350~1400$^{\circ}C$ for 2 h in a reducing atmosphere (1% $H_2/N_2$). The sintered (Ba,Sr)$TiO_3$ was increased pore and the grain size was decreased according to increasing Sr additions. In relative permittivity, the phase transition temperature of (Ba,Sr)$TiO_3$ was decreased for 2.5$^{\circ}C$ according to increasing 0.01 mole Sr additions, and the phase transition dose not appeared about 0.3 mole Sr addition. The (Ba,Sr)$TiO_3$ was show the low resistance from 0.01 mole to 0.05 mole by Sr addition, regardless of sintering temperature. The (Ba,Sr)$TiO_3$ was show $10^2$ jump order at 0.1 and 0.2 mole Sr addition, and PTCR of the sintered $(Ba_{0.7}Sr_{0.3})TiO_3$ does not appeared about 0.3 mole Sr addition, regardless of the sintering temperature and starting material size.

• Progress in Superconductivity
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• v.2 no.2
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• pp.65-70
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• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.822-826
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• 2008

We report the cathodoluminescence and aging properties of a series of green phosphors of formula $Sr_{1-x}M_xGa_2S_4$:Eu (x = 0.0-1.0, M = Ba or Ca) that have potential applications in field emission displays (FEDs). The series of phosphors was synthesized via NaBr-aided solid-state reactions in a flowing $H_2S$ stream. A low level ($\sim$20%) of Ba or Ca substitution for Sr in $SrGa_2S_4$:Eu maintains the orthorhombic phase of pure $SrGa_2S_4$:Eu phosphors. Further, a low level ($\sim$20%) of Ba or Ca substitution for Sr in $SrGa_2S_4$:Eu provides various green colors and sufficient brightness for FED applications. Substitution of Ba or Ca for Sr in $SrGa_2S_4$:Eu also improved the stability of the phosphor when it was operated under electron-beam irradiation of 5 kV.

• The Journal of the Korea Contents Association
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• v.2 no.3
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• pp.146-151
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• 2002

The $Ca_{1-x}$Sr$_{x}$S:CuCl TFEL devices were fabricated by electron-beam deposition system and luminescent characteristics of the TFEL devices were studied. The SrS and CaS powders were mixed to form $Ca_{1-x}$Sr$_{x}$S host materials and 0.2 at% of CuCl was added as the activator. The luminance(lao) and peak emission wavelength of CaS:CuCl TFEL devices were 9.5 cd/m$^2$ and 492 nm, respectively. The luminance(L$_{30}$) and peak emission wavelength of SrS:CuCl TFEL devices were 633 cd/m$^2$ and 500 nm, respectively. It seems that the addition of CaS into the SrS host material generates blue shift of the EL emission characteristics but reduces the luminance and the luminous efficiency of the $Ca_{1-x}$Sr$_{x}$S:CuCl TFEL devices drastically.

• Journal of the Mineralogical Society of Korea
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• v.7 no.2
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• pp.91-96
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• 1994

중.저준위 방사성 폐기물의 대표적인 핵종인 137Cs, 90Sr에 대한 캐올리나이트의 흡착특성을 수용액의 이온강도와 pH의 영양하에서 알아보았다. 흡착실험은 회분식으로 하였고, 사용한 수용액은 NaCl, CaCl2, MgSO4, KCL 각각을 10-1, 10-2, 10-3, 10-4 mole/$\ell$로 하였다. 수용액광물 평형상태의 pH를 4.5, 7.0, 10.5로 조절하였다. 실험결과 캐올리나이트의 Cs, Sr 흡착은 이온강도와 pH에 상당한 영향을 받으며, Sr 흡차에 양이온들의 경쟁은 Ca2+ Mg2+>K+>Na+ 순을 보이고, Cs의 경우에는 K+>Ca2+ Mg2+>Na+의 순을 보인다. 이는 수용액상에서 이온들의 수호에너지와 관련되며, 광물입자와 이온들의 물구조변환특성에 의해 설명된다. Cs과 Sr 사이에 흡착우선성은 산성 내지 약알카리에서는 Cs이 Sr보다 흡착이 잘 되나, 강알칼리성 환경에서는 Sr이 Cs보다 흡착이 잘 되는 pH 의존성을 보였다. 수용액의 pH가 증가함에 따라 핵종의 흡착량이 증가하는데, 이는 캐올리나이트의 흡착자리인 실라놀과 알루미놀에 의한 제타전위가 pH에 의존함과 잘 일치한다.