• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 한국세라믹학회지
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• 제39권4호
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• pp.386-393
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• 2002

본 연구는 티탄산칼륨 섬유(K2O·$nTiO_2$)를 제조한 후, 도전율이 우수한 Sb-doped $SnO_2$(ATO: Antimony Tin Oxide)를 티탄산 칼륨 섬유에 코팅하는 기술을 개발하는데 목적이 있다. 티탄산칼륨 섬유는 서냉 소성법으로 제조하였으며 섬유의 평균 길이는 $15{\mu}m$, 평균 직경은 $0.5{\mu}m$이었다. ATO를 졸-겔법, 공침법, 균일침전법등 세가지 방법으로 티탄산칼륨 섬유에 코팅 하였으며 ATO 코팅된 티탄산칼륨 섬유는 ATO 함량(5∼70 wt%), Sb 함량(0∼20 wt%), 온도($450∼800^{\circ}C$), 수세 여부 및 회수(3∼4회) 등을 변화 시키며 비저항 변화를 관찰하였다. 공침법의 경우 ATO 함량이 30wt%에서 103${\Omega}$·cm 낮은 비저항을 나타내었으며, 그 이상의 함량에서는 거의 일정한 값($60{\Omega}{\cdot}cm∼90{\Omega}{\cdot}$cm)을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.245-245
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• 2016

본 연구에서는 선형 대향 타겟 스퍼터 (Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 ITO와 Ti doped $In_2O_3$ (TIO) 타겟을 Co-sputtering한 InSnTiO 투명 전극의 전기적, 광학적 특성을 연구하였다. InSnTiO 투명전극의 전기/광학적 및 구조적 특성은 Hall measurement, UV/Vis spectrometry, X-ray Diffraciton 분석법을 통해 최적화 하였고, DC power, substrate to target distance (TSD), target to target distance (TTD), ambient treatment 변수 조절을 통해 최적화된 LFTS InSnTiO 투명전극을 제작하였다. LFTS 공정을 이용한 InSnTiO 투명전극의 성막 공정 중 DC파워와 공정압력 변화에 따른 구조적, 표면적 특성 변화는 Field-Emission Scanning Electron Microscopy (FE-SEM) 과 X-ray Diffractometer (XRD) 분석을 통해 관찰하였다. 이렇게 증착된 InSnTiO 투명전극은 급속열처리 시스템으로 (Rapid Thermal Annealing system) 후열처리를 진행하여 투과도의 향상과 면저항의 감소를 확인하였다. 본 연구에서는 다양한 분석을 통해 Co-sputtering한 InSnTiO 박막의 특성과 다양한 장점을 소개한다.

• 한국재료학회지
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• 제24권9호
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• pp.469-473
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• 2014

$SrSnO_3$ phosphor powders were synthesized with two different contents of activator ions $Eu^{3+}$ and $Tb^{3+}$ using the solid-state reaction method. The structural, morphological, and optical properties of the phosphors were investigated using X-ray diffractometry, field-emission scanning electron microscopy, and fluorescence spectrophotometry, respectively. All the phosphors showed a cubic structure, irrespective of the type and the content ratio of activator ions. For $Eu^{3+}$-doped $SrSnO_3$ phosphors, the intensity of the 620 nm red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ was stronger than that of the 595 nm orange emission signal due to the $^5D_0{\rightarrow}^7F_1$ transition in the range 0.01-0.05 mol of $Eu^{3+}$, but the ratio of the intensity was reversed in the range 0.10-0.20 mol of $Eu^{3+}$. The variation in the emission intensity indicates that the site symmetry of the $Eu^{3+}$ ions around the host crystal was changed from non-inversion symmetry to inversion. For the $Tb^{3+}$-doped $SrSnO_3$ phosphors under excitation at 281 nm, one strong green emission band at 550 nm and several weak bands were observed. These results suggest that the optimum red and green emission signals can be realized when the activator ion content for $Eu^{3+}$- or $Tb^{3+}$-doped $SrSnO_3$ phosphors is 0.20 mol and 0.15 mol, respectively.

• 한국세라믹학회지
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• 제38권1호
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• 센서학회지
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• 제6권5호
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• pp.369-375
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• 1997

$SnO_{2}$에 $V_{2}O_{5}/ThO_{2}/Pd$를 도핑하여 제조된 센서는 약 $500^{\circ}C$의 높은 센서 온도에서 CO에 대해 우수한 선택도와 안전성 및 빠른 응답특성을 보였다. 특히, $V_{2}O_{5}$를 약 3.0 wt.% 첨가하여 선택도에 있어서 CO 감도에 대해 $NO_{x}$, $C_{3}H_{8}$, $CH_{4}$ 및 $SO_{2}$같은 많은 간섭가스들의 영향이 적음을 알았다. 센서 제조는 $V_{2}O_{5}$(3.0 wt.%), $ThO_{2}$(1.5wt.%), Pd(1.0 wt.%)의 촉매물질과 함께 기존에 잘 알려진 후막기술을 이용하였다. 일반적으로 연소배가스처럼 $NO_{x}$와 CO가 혼합되어 있는 복합가스의 경우, $SnO_{2}$계 반도체 센서로는 CO만의 검지는 $NO_{x}$ 간섭 때문에 대단히 어렵다. 본 센서는 공연비제어를 요하는 자동차나 보일러 시스템의 연소배가스의 측정과 감시에 사용할 수 있을 것이다.

• 센서학회지
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• 제17권4호
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• pp.295-302
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• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2005년도 제36차 춘계학술대회 및 제3회 HVEM 이용자 워크샵
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• pp.59-65
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• 2005

• 한국표면공학회지
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• 제44권4호
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1496-1498
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• 1994

In this study, x PSN - y PT - z PZ ceramics doped with w $MnO_2$ were fabricated by the mixed oxide method at 1250 [$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt%] $MnO_2$ the Pyroelectrics coefficient was $6.6{\times}10^{-8}[C/cm^2.^{\circ}C]$, respectibly.