• Title/Summary/Keyword: $SnO_2$/Si solar cell

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Electrical characteristics of Sn $O_{2}$Si heterojunction solar cells depending on annealing temperature (열처리온도에 따른 $SnO_2$/Si 이종접합 태양전지의 전기적 특성)

  • 이재형;박용관
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.481-489
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    • 1994
  • The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

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Electrical and Optical Properties of Violet-Sensitive $SnO_2-SiO_2-Si$(n-p) Type Photocell (자색광에 민감한 $SnO_2-SiO_2-Si$(n-p)형 광전지의 전기적광하적특성)

  • 김유신
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.14 no.1
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    • pp.15-22
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    • 1977
  • We have obtained a violet-sensitive photocell as a part of the developing project on such type of solar cell. The photocell has the structure of SnO2-SiO2-Si MOS coupled on Si n-p homojuction. It is not relevant to use as a solar cell because of its small photovoltaic power(0.25V, 150$mutextrm{A}$), however, since the spectral response of the cell is shifted toward the violet band region and its switching speed is fairly high in comparison with those of the Si p-n homojunction type solar cell, it is expected that we will be able to find mere novel utilities than the ordinary silicon photocell.

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Electrical and Optical properties of $Si-SnO_2 $ Heterojunction ($Si-SnO_2 $ Heterojunction의 전기적 광학적 특성)

  • 김화택
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.13 no.2
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    • pp.23-27
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    • 1976
  • $Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

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Amorphous silicon thin-film solar cells with high open circuit voltage by using textured ZnO:Al front TCO (ZnO:Al 투명전도막을 이용한 높은 개방전압을 갖는 비정질 실리콘 박막 태양전지 제조)

  • Lee, Jeeong-Chul;Ahn, Se-Hin;Yun, Jae-Ho;Song, Jin-Soo;Yoon, Kyung-Hoon
    • New & Renewable Energy
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    • v.2 no.3
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    • pp.31-36
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    • 2006
  • Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

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Amorphous silicon thin-film solar cells with high open circuit voltage by using textured ZnO:Al front TCO (ZnO:Al 투명전도막을 이용한 높은 개방전압을 갖는 비정질 실리콘 박막 태양전지 제조)

  • Lee, Jeong-Chul;Dutta, Viresh;Yi, Jun-Sin;Song, Jin-Soo;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.158-161
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    • 2006
  • Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

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The Improvement in Properties of $SnO_2-Si $ Heterojunction Solar Cells ($SnO_2-Si $ 이중접합 태양전지의 특성개선)

  • 이#한;송정섭
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.17 no.6
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    • pp.65-71
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    • 1980
  • The Sn O2-Si Heterojunction sola cells are Prepared by vacuum deposition of SnO2 on N- and P-type Si - wafers arts the effects of annealing on the Solar cell characteiistics are presented. The existence of optimumannealins temperature for maximum open-circuit voltage and short - circuit current of the solar cell is observed. The optimum tomperature, when low resistivity (7- 2.3 [$\Omega$.cm]) P-and N-type Si -wafers are used, is 500 [$^{\circ}C$] End 400 [$^{\circ}C$] when high resistivity[41-58 [$\Omega$.cm]) P-type Si-wafers are used.

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Characterization of thin film Si solar cell with FTO transparent electrode (FTO 투명전극에 따른 박막 실리콘 태양전지 특성평가)

  • Kim, S.H.;Kim, Y.J.;No, I.J.;Cho, J.W.;Lee, N.H.;Kim, J.S.;Shin, P.K.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1351_1352
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    • 2009
  • We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

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The effects of TCO/p-layer Interface on Amorphous Silicon Solar Cell (비정질 실리콘 태양전지에서 TCO/p층 계면 특성의 영향)

  • Ji, I.H.;Suh, S.T.;Choi, B.S.;Hong, S.M.
    • Solar Energy
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    • v.8 no.1
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    • pp.68-73
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    • 1988
  • In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.

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Roles of i-SiC Buffer Layer in Amorphous p-SiC/i-SiC/i-Si/n-Si Thin Film Solar Cells (비정질 p-SiC/i-SiC/i-Si/n-Si 박막 태양전지에서 i-SiC 완충층의 역할)

  • Kim, Hyun-Chul;Shin, Hyuck-Jae;Lee, Jae-Shin
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1155-1159
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    • 1999
  • Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

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Properties Evaluation of $SnO_2$ : Sb transparent conductive films by $SiO_2$ barrier ($SiO_2$ barrier에 따른 $SnO_2$ : Sb 투명전도막의 특성고찰)

  • 김범석;김창열;임태영;오근호
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.190-190
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    • 2003
  • 여러원소 (Sb, F 등)를 도핑한 SnO$_2$ 투명전도막은 여러 가지 훌륭한 특성으로 Solar cell, heat mirrors, gas sensors, liquid crystal displays, thick film resistor 등과 같이 넓은 범위에서 응용되고 있다. 본 연구에서는 Sb 도핑된 Tin Oxide films이 Sol-gel dip coating법에 의해 준비되었다. SnO$_2$:Sb 용액은 SnC1$_2$ 와 SbC1$_3$ Power를 알코올에 용해하여 Ethylene glycol 와 Citric acid를 첨가하여 합성하였다. 막의 상형성은 XRD와 SEM(Scanning electron microscope)에 의해서 분석되었으며, 특성분석은 투과율(UV/VIS Spectrophotometer)과 표면전기저항(four point probe)으로 분석되었다. SiO$_2$ barrier이 SnO$_2$:Sb 막의 특성에 미치는 영향을 확인하기 위하여 XPS(X-ray photoelectron spectroscopy) 분석이 적용되었다.

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