• 센서학회지
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• 제16권4호
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• 한국세라믹학회지
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• 제31권9호
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• pp.1021-1029
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• 1994

SiC ultrafine particles of 1, 10, 20 and 30 vol% were dispersed in $\alpha$-Si3N4 matrix and hot-pressed under the condition of 30 MPa at 1800 and 190$0^{\circ}C$ respectively. Physical, mechanical properties and microstructures of sintered Si3N4-SiC nanocomposites were investigated. Flexural strength and density of Si3N4-10 vol% SiC nanocomposites hot-pressed at 190$0^{\circ}C$ represented the 1002 MPa and 97.9%T.D respectively, and it was confirmed as a remarkable improvement of 67% compared to Si3N4 monolith. Fracture toughness was shown as 7.2 MPa.m1/2 when the same composition was hot pressed at 180$0^{\circ}C$. This effect was supposed to be due to the improvement of microstructure by the adequate suppression of the excessive growth of Si3N4 grain with SiC nano-particles.

• 한국분말재료학회지
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• 제10권1호
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• pp.57-62
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• 2003

The effect of bedding on the microstructure of $Si_3N_4$ added with ultra-fine SiC was investigated. The bedding and the addition of ultra-fine SiC effectively inhibited grain growth of $Si_3N_4$ matrix grain. The microstructures of the specimens sintered with bedding powder consisted of fine-grains as compared with the specimens sintered without bedding powder. In addition, the grain size and the difference of grain size between the specimens sintered with bedding and without bedding was reduced with increasing SiC content. Some ultra-fine SiC particles were trapped in the $Si_3N_4$ grains growed. The number of SiC particles trapped in the $Si_3N_4$ grains increased with increasing the grain growth. When ultra-fine SiC particles were added in the $Si_3N_4$ ceramics, the strength was improved but the toughness was decreased, which was considered to be resulted from the decrease of the grain size.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 춘계학술대회 논문집
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• pp.655-659
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• 2002

This study is performed to develop the Si$_3$N$_4$ based ceramic inserts. Si$_3$N$_4$with addition of SiC and A1$_2$O$_3$ is investigated to determine the possibility to be a new tool. The tool life of Si$_3$N$_4$ insert with more than 20wt% SiC is shorter than commercial Si$_3$N$_4$ insert during machining both heat treated SCM440 and gray cast iron. Even though SiC has higher hardness than Si$_3$N$_4$, its chemical affinity to the iron on high temperature may causes deteriorat ion of tool life. To the contrary, Si$_3$N$_4$insert with A1$_2$O$_3$ shows increase of tool life up to 300% compared to the commercial Si$_3$N$_4$insert. It may attribute to the high temperature stability of A1$_2$O$_3$. Further study will be focused on the optimization of ceramic inserts with the composition of Si$_3$N$_4$and A1$_2$O$_3$.

• 한국재료학회지
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• 제6권4호
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• pp.421-427
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• 1996

초미립 SiC 분말을 2차상으로 Si3N4에 첨가하여 SiC/Si3N4 나노 복합체를 핫프레스법과 가스압소결고 제조하였다. 2차상으로 첨가한 SiC의 입자 크기가 $\beta$-Si3N4 나노 복합체를 제조할 수 있었다. 사온에서 80$0^{\circ}C$까지는 강도의 100$0^{\circ}C$이상에서는 강도는 급격한 감소를 보였으며 이는 소결조제로 첨가한 AI2O3, Y2O3와 SiO2가 $\beta$-Si3N4의 입계에 유리상을 형성하였기 때문에 해석된다.

• 한국세라믹학회지
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• 제34권4호
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• pp.406-412
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• 1997

Al2O3/SiC hybrid-composite has been fabricated by the conventional powder process. The addition of $\alpha$-Al2O3 as seed particles in the transformation of ${\gamma}$-Al2O3 to $\alpha$-Al2O3 provided a homogeneity of the microstructure. The grain growth of Al2O3 are significantly surpressed by the addition of nano-size SiC particles. Dislocation were produced due to the difference of thermal expansion coefficient between Al2O3 and SiC and piled up on SiC particles in Al2O3 matrix, resulting in transgranular fracture. The high fracture strength of the composite was contributed to the grain refinement and the transgranular fracture mode. The addition of SiC platelets to Al2O3/SiC nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC platelets with nitrides such as BN and Si3N4 enhanced fracture toughness much more than non-coated SiC platelets by enhancing crack deflection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• 한국세라믹학회지
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• 제24권1호
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• 한국세라믹학회지
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• 제35권8호
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• pp.807-812
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• 1998

Mechanical properties of two types of polycrystlline {{{{ { { Ti}_{3 }SiC }_{2 } }} with different grain size were investigated. A fine grain {{{{ { { Ti}_{3 }SiC }_{2 } }} has a higher fracture strength and hardness. Plot of strength versus Vickers indentation load indicated that {{{{ { { Ti}_{3 }SiC }_{2 } }} has a high flaw tolerance. Hertzian indentation test using a spherical indenter was used to study elastic and plastic behavior in {{{{ { { Ti}_{3 }SiC }_{2 } }}. Indentation stress-strain curves of each material are made to evaluate the plasticity of {{{{ { { Ti}_{3 }SiC }_{2 } }} Both find and coarse grain {{{{ { { Ti}_{3 }SiC }_{2 } }} showed high plasticity. In-dentation stress-strain curve of coarse grain {{{{ { { Ti}_{3 }SiC }_{2 } }} deviated even more from an ideal elastic limit in-dicating exceptional plasticity in this material. Deformation zones were formed below the contact as well as around the contact area in both materials but the size of deformation zone in coarse grain {{{{ { { Ti}_{3 }SiC }_{2 } }} was much larger than that in fine grain {{{{ { { Ti}_{3 }SiC }_{2 } }} Intragrain slip and kink would account for high plasticity. Plastic behavior of {{{{ { { Ti}_{3 }SiC }_{2 } }} was strongly influenced by grain size.

• 원예과학기술지
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• 제30권3호
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• pp.250-255
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• 2012

본 연구는 저면관수와 엽면살포의 두 가지 관수방법에서 세 가지 규산염($CaSiO_3$, $K_2SiO_3$, $Na_2SiO_3$)의 처리가 칼랑코에의 생육에 미치는 영향을 알아보고자 수행하였다. 칼랑코에 'Peperu'를 2010년 7월 17일 삽목하고, 2010년 8월 3일에 삽목묘 중 균일한 개체를 선발하여 상토(토실이상토, 신안그로)가 담긴 10.5cm 포트에 정식하였다. 정식 후 세 가지 규산염($CaSiO_3$, $Na_2SiO_3$, $K_2SiO_3$)을 $50mg{\cdot}L^{-1}$ Si의 농도로 엽면살포 또는 저면관수로 처리하였다. 재배 중의 EC는 1.4-$1.6mS{\cdot}cm^{-1}$로, pH는 6.0의 범위를 유지하도록 공급양액과 공급량을 조절하였다. 규산염 처리 12주째에 수확하여 초장, 경경, 엽록소 함량, 꽃대 수, 꽃대 길이, 생체중과 건물 중, 그리고 식물체 내 축적된 규소함량을 측정하였다. 그 결과 저면관수와 엽면살포 처리 시 초장과 꽃대길이가 줄어들었지만, 엽면살포 처리 시 잎이 썩거나 물러지는 현상이 발견되었다. 세 가지 다른 규산염 종류 사이에서는 저면관수를 통해 공급한 $CaSiO_3$ 처리에서 규소가 칼랑코에 잎에 가장 많이 흡수되었고, 그 영향으로 엽록소 함량이 증가하였다. 신초 조직의 원소 함량은 $CaSiO_3$, $K_2SiO_3$, 그리고 $NaSiO_3$ 처리에 따라 $Ca^+$, $K^+$, 그리고 $Na^+$가 각각 높았고, 저면관수한 $K_2SiO_3$와 $NaSiO_3$ 처리에서는 $Ca^+$와 $Mg^+$, 그리고 $K^+$와 $Ca^+$가 각각 낮았다. 최종적으로 저면관수 $CaSiO_3$ $50mg{\cdot}L^{-1}$ 처리한 칼랑코에의 잎에 Si가 가장 많이 축적되었고, 축적된 Si 함량의 영향으로 엽록소 함량이 증가되었다. 또한 대조구에 비해 규산염처리에서 초장과 같은 생장량이 감소되어 칼랑코에와 같은 소형 분화류의 품질을 향상시켰으나 각 규산염 처리구 사이에서의 생육에는 유의적인 차이가 없었다.