• 한국세라믹학회지
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• 제38권11호
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• pp.1037-1041
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• 2001

저온(32$0^{\circ}C$)에서 SiH$_4$와 $N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

• 센서학회지
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• 제9권2호
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• pp.90-95
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• 2000

$Si_3N_4/SiO_2/Si_3N_4$/Si 판위에 MgO 박막을 성장하여 MgO 단결정과 결정배향성이 유사한 초전형 적외선 센서용 기판을 제작하였다. RF 마그네트론 스퍼터링법으로 MgO 박막을 성장하였고, 그 위에 Pt 하부전극과 PLT 박막을 성장시킨 후 c축 배향성을 조사하였다. $500^{\circ}C$의 기판온도와 30 mTorr의 분위기 압력 및 160 W의 RF power에서 성장된 MgO 박막이 단결정 MgO가 가지는 배향성 정도의 우수한 a축 배향성을 보였고, 그 위에 성장된 PLT 박막은 MgO 단결정 기판위에 성장된 것과 거의 회절강도 변화가 유사한 c축 배향성을 보였다.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
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• pp.166-168
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• 2006

$Si_3N_4/SiC$ composite ceramics was sintered in order to investigate their bending strength behavior after crack healing. $Y_2O_$ and $TiO_2$ power was added as sintering additives to enhance it's sintering property. A three-point bending specimen was cut out from sintered plates. About $100\;{\mu}m$ semi-circular surface cracks were made on the center of the tension surface of the three-point bending specimen using Vickers indenter. After the crack-healing processing from $500^{\circ}C$ to $1300^{\circ}C$, for 1 h, in air, the bending strength behavior of these crack-healed specimen coated with $SiO_2$ colloidal were determined systematically at room temperature. $Si_3N_4/SiC$ ceramics using additive powder ($Y_2O_3+TiO_2$) was superior to that of additive powder $Y_2O_3$. The additive powder $TiO_2$ exerted influence at growth of $Si_3N_4$. The optimum crack healing conditions coated $SiO_2$ colloidal were $1000^{\circ}C$ at $Si_3N_4/SiC$ using additive powder ($Y_2O_3+TiO_2$), and $1300^{\circ}C$ at $Si_3N_4/SiC$ using additive powder $Y_2O_3$.

• 한국세라믹학회지
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• 제16권4호
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• pp.206-212
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• 1979

The phase relations and microstructure appeared at 1700℃ in a system of Si3N4-Al2O3-SiO2 were studied. The samples were pressurelessly sintered at 1700℃ for 1hr and reheated at 1600℃ for 1hr under nitrogen atmosphere. The compounds formed were identified by X-ray diffraction method and the microstrues were observed by SEM. The stable phases appeared in this system were X-phase, Si2ON2, β'-Si3N4 and Mullite. From the results of those experiments, it was concluded that the X-phase has very close composition to that proposed by G, K. Layden, Si3Al6O12N2. SEM photographs showed that Si2ON2 was a plate phase and X-phase was a rectagular plate phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.128-129
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• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• 대한전기학회논문지
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• 제45권2호
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• pp.242-248
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• 1996

The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.

• 멤브레인
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• 제25권2호
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• pp.115-122
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• 2015

졸겔법에 의해서 trimethylborate (TMB)/tetraethylorthosilicate (TEOS) 몰비 0.01, 온도 $800^{\circ}C$에서 $SiO_2{\cdot}B_2O_3$가 제조되었다. 그리고 제조된 $SiO_2{\cdot}B_2O_3$와 PDMS[poly(dimethylsiloxane)]로부터 PDMS-$SiO_2{\cdot}B_2O_3$ 복합막을 제조하고 막의 물리화학적 특성을 TG-DTA, FT-IR, BET, X-ray, SEM에 의해 조사하고 그리고 $H_2$와 $N_2$의 투과도와 선택도를 조사하였다. TG-DTA, BET, X-ray, FT-IR 측정에 의하면 $SiO_2{\cdot}B_2O_3$는 무정형의 다공성 $SiO_2{\cdot}B_2O_3$였으며, 기공의 평균직경은 $37.7821{\AA}$, 표면적은 $247.6868m^2/g$이었다. TGA 측정에 의하면 PDMS 내에 $SiO_2{\cdot}B_2O_3$가 첨가되었을 때 PDMS-$SiO_2{\cdot}B_2O_3$ 복합막의 열적 안정성은 향상되었다. SEM 관찰에 의하면 $SiO_2{\cdot}B_2O_3$는 약 $1{\mu}m$ 크기로 PDMS 내에 덩어리 상태로 뭉쳐서 분산되어 있었다. 기체투과실험에 의하면 PDMS 내에 $SiO_2{\cdot}B_2O_3$ 함량이 증가하면 $H_2$와 $N_2$의 투과도는 증가하였고, 질소보다 Lenard Jones 분자지름이 작은 $H_2$의 투과도는 $N_2$의 투과도보다 컸으며, 선택도($H_2/N_2$)는 감소하였다.

• 한국표면공학회지
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• 제43권5호
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• pp.238-242
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• 2010

In the present work, the influence of oxide on the Cr-Si-N coatings was investigated for the Cr-Si-O-N coatings on AISI 304 and Si wafer deposited by hybrid system, which combines the DC magnetron sputtering technique and arc ion plating (AIP) using Cr and Si target in an $Ar/N_2/O_2$ gaseous mixture. As the O content in the Cr-Si-N coatings increased, the diffraction patterns of the Cr-Si-O-N coatings showed CrN and $Cr_2O_3$ phases. However, as the O content increased to 28.8 at.%, diffraction peak of $Cr_2O_3$ was disappeared in the Cr-Si-O-N coating. The $d_{200}$ value was decreased with increasing of O content. The average grain size increased from about 40 nm to 65 nm as the O content increased. The maximum micro-hardness of the Cr-Si-O-N coating was obtained 4507 Hk at the O content of 24.8 at.%. The average friction coefficient of the Cr-Si-O-N coatings was gradually decreased by increasing the O content and the average friction coefficient decreased from 0.37 to 0.25 by increasing the O content. These results indicated that amorphous phase was increased in the Cr-Si-O-N coatings by increasing of O content.

• 한국세라믹학회지
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• 제41권3호
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• pp.197-201
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• 2004

플라즈마 화학기상증착(PECVD)법을 이용하여 Si(100) 웨이퍼에 silicon oxide(SiO$_2$)와 silicon oxynitride(SiON) 후막을 SiH$_4$, $N_2$O, $N_2$가스를 혼합하여 증착하였다. RF power와 rf bias power의 변화에 따른 SiO$_2$ 막과 SiON 막의 특성변화에 대하여 고찰하였다. RF power와 rf bias power가 증가함에 따라 굴절률은 감소하는 경향을 나타내었으며, 막의 굴절률은 1552 nm에서 1.4493-1.4952까지 변화하였다. 이와 같이 rf power가 증가함에 따라 굴절률이 감소하는 이유는 oxygen의 량이 증가하고 nitrogen의 량이 감소하여 즉, O/N 비가 증가하여 굴절률이 감소하는 경향을 나타내었다.

• 대한기계학회논문집A
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• 제32권11호
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• pp.957-962
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• 2008

Crack-healing behavior of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and amount of additive $SiO_2$ colloidal. Results showed that optimum amount of additive $SiO_2$ colloidal and coating of $SiO_2$ colloidal on crack could significantly increase the bending strength. The heat-treatment temperature has a profound influence on the extent of crack healing and the degree of strength recovery. The optimum heat-treatment temperature depends on the amount of additive $SiO_2$ colloidal. Crack healing strength was far the better cracked specimen with $SiO_2$ colloidal coating on crack surface. After heat treatment at the temperature 1,273 K in air, the crack morphology almost entirely disappeared by scanning prob microscope. At optimum healing temperature 1,273 K, the bending strength with additive $SiO_2$ colloidal 0.0 wt.% without $SiO_2$ colloidal coating recovered to the value of the smooth specimens at room temperature for the investigated crack sizes $100\;{\mu}m$. But that with $SiO_2$ colloidal coating increase up to 140 %. The amount of optimum additive $SiO_2$ colloidal was 1.3 wt.% and crack healed bending strength with $SiO_2$ colloidal coating increase up to 160 % to smooth specimen of additive $SiO_2$ colloidal 0.0 wt.%. Crack closure and rebonding of the crack due to oxidation of cracked surfaces were suggested as a dominant healing mechanism operating in $Si_3N_4$ composite ceramics.