• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.159-160
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• 2007

본 연구에서는 Si 타겟과 반응성 마그네트론 스퍼터링법을 적용하여 $SiO_xN_y$ 박막을 PET 필름상에 증착하였다. PET 필름상에 밀착력 증진 및 기판 표면 거칠기 제어를 위해 이온빔을 이용한 플라즈마 전처리를 수행하였다. 플라즈마 전처리 조건과 질소 가스 유량비에 따른 $SiO_xN_y$ 박막의 광학적 특성과 수분의 투습성에 대한 영향을 관찰하였다. 광학적 투과율은 전처리 및 조성비에 관계없이 95% 이상의 높은 광투과율을 보여주었다. 수분에 대한 투습 특성은 플라즈마 전처리 조건에 따라 다소 향상됨을 확인하였고, 질소 유량비가 증가함에 따라 투습 특성이 향상되었다.

• Journal of Surface Science and Engineering
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• v.45 no.1
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1222-1225
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• 1997

A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.200-206
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• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.7-11
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• 2000

The anti-reflective anti-static (ARAS) optical film is designed using absorbent materials such as ITO, $TiN_xW_y$, Ag by Essential Macleod program. [air ${\mid}TiN_xW_y{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The reflectivity, transmittance of this coating are below 0.5%, about 75%, respectively. [air $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$, ITO glass] layer can adjust reflectance of below 0.5% with above 97% transmittance. In the [air ${\mid}SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$ Ag glass] layer, the transmission can be controlled at above 96% with reflectance of 1~2%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.150-150
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• 2010

비휘발성 메모리의 구조는 ONO($SiO_2$, $SiN_X$, $SiN_XN_Y$), 혹은 NNO($SiN_X$, $SiN_X$, $SiN_XN_Y$)등으로 구성된 blocking layer, charge storage layer, tunneling layer 등이 일반적이다. 본 연구에서 제작된 OSO구조는charge storage layer를 a-Si을 사용한 것으로, 기존에 사용되던 charge storage layer인 $SiN_x$ 대신에 a-Si:H 를 사용하였다. 최적의 전하 저장층 조건을 알기 위하여 가스비에 따른 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 전하 저장량 및 flatband 전압의 shift 값을 측정 및 분석하였다. 실험 결과, bandgap이 작아 band edge 저장 가능하며, SiNx 와 마찬가지로 a-Si:H 내 트랩에 저장이 가능하였다. 또한 $SiO_2$/a-Si:H와 a-Si:H/SiOxNy 계면의 결함 사이트에 전하의 저장되며, bandgap이 작아 트랩 또는 band edge에 위치한 전하들이 높은 bandgap을 가지는 blocking 또는 tunneling layer를 통하여 빠져 나오기 어려운 특성이 있었다. 본 연구에서는 최적의 전하 저장 층 조건을 알기 위하여 가스비에 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 flatband 전압의 shift 값을 측정하여 결과를 논의하였다. 또한 OSO 구조의 두께에 있어 MIS 결과와 poly-Si 상에 실제 제작된 NVM 소자의 switching 특성을 논의하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.138-138
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• 2010

플렉서블 디스플레이에 사용되고 있는 기판은 광학적 투과율이 우수하고 휘어지는 폴리머 기판이 많이 활용되고 있으나 대기중의 수분 및 산소와 같은 가스성분들이 기판을 통해 침투하여 디스플레이의 수명을 감소시킨다. 이러한 문제점을 해결하기 위해 투명하면서 절연특성이 뛰어나고 수분투과 방지 특성이 뛰어난 실리콘 화합물을 기반으로 하는 가스차단막의 연구가 활발히 진행되고 있다. 본 실험에서는 기존의 스퍼터링 장치에 비해 저온공정이면서 구조적으로 뛰어난 박막특성을 얻을 수 있는 대향타겟식 스퍼터링(Facing Targets System, FTS)법을 이용하여 PEN기판 위에 $SiO_x$, $SiO_xN_y$, $(SiO_2)_x(ZnO)_{100-x}$ (SZO)를 단일층또는 다층으로 증착한 박막들의 광학적, 구조적 및 수분 투과 방지 특성들을 알아보았다. $SiO_x$, $SiO_xN_y$, SZO박막들의 광학적 특성을 알아보기 위해 Shimadzu사의 UV-VIS spectrophotometer 장비를 사용하여 측정한 결과 가시광 영역에서 80%이상의 높은 광투과율을 나타내었다. 박막의 수분투과 방지 특성으로 Mocon사의 Permatran W3/31 system을 이용한 투습율을 측정결과 가스 차단막이 없는 Bare PEN에 비해 PEN기판 위에 $SiO_x$와 $SiO_xN_y$ 박막들을 단층 또는 다층으로 증착한 박막의 투습율이 감소한 것을 확인 할 수 있었다. 특히 SZO 박막의 경우 다른 가스차단막들과 비교해 가장 낮은 수분투과율을 나타내었다. 이는 향후 SZO를 기반으로 한 단층박막이나 무기/무기 또는 유기/무기의 다층 박막 형태를 가지는 가스차단막이 플렉서블 디스플레이에 적용 가능할 것이라 사료된다.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.