• 멤브레인
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• 제25권2호
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• pp.115-122
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• 2015

졸겔법에 의해서 trimethylborate (TMB)/tetraethylorthosilicate (TEOS) 몰비 0.01, 온도 $800^{\circ}C$에서 $SiO_2{\cdot}B_2O_3$가 제조되었다. 그리고 제조된 $SiO_2{\cdot}B_2O_3$와 PDMS[poly(dimethylsiloxane)]로부터 PDMS-$SiO_2{\cdot}B_2O_3$ 복합막을 제조하고 막의 물리화학적 특성을 TG-DTA, FT-IR, BET, X-ray, SEM에 의해 조사하고 그리고 $H_2$와 $N_2$의 투과도와 선택도를 조사하였다. TG-DTA, BET, X-ray, FT-IR 측정에 의하면 $SiO_2{\cdot}B_2O_3$는 무정형의 다공성 $SiO_2{\cdot}B_2O_3$였으며, 기공의 평균직경은 $37.7821{\AA}$, 표면적은 $247.6868m^2/g$이었다. TGA 측정에 의하면 PDMS 내에 $SiO_2{\cdot}B_2O_3$가 첨가되었을 때 PDMS-$SiO_2{\cdot}B_2O_3$ 복합막의 열적 안정성은 향상되었다. SEM 관찰에 의하면 $SiO_2{\cdot}B_2O_3$는 약 $1{\mu}m$ 크기로 PDMS 내에 덩어리 상태로 뭉쳐서 분산되어 있었다. 기체투과실험에 의하면 PDMS 내에 $SiO_2{\cdot}B_2O_3$ 함량이 증가하면 $H_2$와 $N_2$의 투과도는 증가하였고, 질소보다 Lenard Jones 분자지름이 작은 $H_2$의 투과도는 $N_2$의 투과도보다 컸으며, 선택도($H_2/N_2$)는 감소하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권11호
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.400-403
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• 1999

The mechanical and electrical properties of hot-pressed and annelaed $\beta$-SiC+39vol.% $ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$(6:4 wt%). In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$ grains were observed between $\beta$-SiC and $ZrB_2$. The properties of the $\beta$-SiC+39vol.%$ZrB_2$ composites with 4wt% $Al_2O_3+Y_2O_3$ at R.T. are as follows: fracture toughness is 6.37 MPa.m1/2, electical resistivity is $1.51\times10^{-4}\Omega \cdot\textrm{cm}$ and the relative density is 98.6% of the theoretical density. The fracture toughness of the $\beta$-SiC+39 vol.% $ZrB_2$ composites were weakly decreased with increasing amount of $Al_2O_3+Y_2O_3$ additives. Internal stresses due to the difference of $\beta$-SiC and $ZrB_2$ thermal expansion coefficient and elastic modulus mismatch appeared to contribute to fracture toughening in $\beta$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites.

• 한국세라믹학회지
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• 제39권5호
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• pp.490-497
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• 2002

$CaO-SiO_2-B_2O_3$계의 결정화유리의 소결 특성 및 기계적 특성, 생체활성을 알아보았다. 이 조성의 결정화유리는 750-830${\circ}$ 사이에서 소결 되었으며 치밀한 미세구조를 보였다. 이 결정화 유리는 단사정계 월라스토나이트(monoclinic wollastonite), 칼슘보레이트(Calcium borate, $CaB_2O_4$) 결정상과 보로실리케이트(borosilicate) 유리 기지상(matrix)의 3상으로 구성되었다. 기계적 강도는 지금까지 알려진 다른 생체활성 세라믹스보다 우수하였으며 특히 압축강도(2813 MPa), 파괴인성($3.12 MPa{\cdot}m^{1/2}$)이 높았다. 생체활성은 결정화유리 중 calcium borate와 보로실리케이트 유리의 양에 의존하였는데, 용해도가 높은 calcium borate는 의사체액(SBF)의 칼슘이온의 과포화도를 상승시키고 borosilicate 유리는 탄산아파타이트 핵생성에 필요한Si-OH기를 형성시켜 탄산아파타이트 층이 빨리 생성되기 때문으로 판단된다. 따라서 $CaB_2O_4$와 borosilicate 유리가 많을수록 결정화유리의 생체활성이 뛰어난 것으로 생각된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.72-75
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• 2000

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.479-481
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• 2000

The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

• 전기학회논문지
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• 제57권11호
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1913-1915
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• 1999

The ${\beta}-SiC+ZrB_2$ ceramic composites were hot-press sintered and annealed by adding 1, 2, 3wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at $1950^{\circ}C$ for 4h. In this microstructures, no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 90.79% of the theoretical density and the porosity decreased with increasing $Al_2O_3+Y_2O_3$ contents. Phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H, 4H), $ZrB_2$, $Al_2O_3$ and $\beta$-SiC(15R). Flexural strength showed the highest of 315.46MPa for composites added with 3wt% $Al_2O_3+Y_2O_3$ additives at room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of $5.5328MPa{\cdot}m^{1/2}$ for composites added with 2wt% $Al_2O_3+Y_2O_3$ additives at room temperature.