• 한국토양비료학회지
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• 제6권2호
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• pp.107-113
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• 1973

인산(燐酸), 가리(加里) 및 규산시용(珪酸施用)과 출수후(出穗後)의 생육온도(生育溫度)가 벼의 수량(收量) 및 양분흡수(養分吸收)에 미치는 영향(影響)을 구명(究明)하기 위(爲)하여 실시(實施)한 Pot시험결과(試驗結果)를 요약(要約)하면 다음과 같다. 1. 수량(收量)은 출수후(出穗後) 생육온도(生育溫度)에 크게 영향(影響)을 받아 $25^{\circ}C$ 수량(收量) 100에 대(對)하여 $20^{\circ}C$에서는 62.3%, $15^{\circ}C$에서는 37.2%로 감수(減收)되였으며 출수후(出穗後) 생육온도(生育溫度)가 낮은 $15^{\circ}C$에서는 인산(燐酸), 가리(加里) 및 규산(珪酸)의 시용(施用)이 수량(收量)을 크게 증가(增加)시켰다. 2. 등숙율(登熟率)과 천립중(千粒重)도 출수후(出穗後) 생육온도(生育溫度)가 낮을수록 떨어지며 저온(低溫)인 $15^{\circ}C$에서는 인산(燐酸), 가리(加里) 및 규산(珪酸)의 시용(施用)은 등숙율(登熟率)과 천립중(千粒重)을 크게 증가(增加)시켰다. 3. 출수후(出穗後) 생육온도(生育溫度)가 높아짐에 따라 립중증가(粒重增加)의 속도(速度)가 빠르고 그 정지(停止)도 빠르며 저온(低溫)인 $15^{\circ}C$에서는 이와 반대(反對)로 그 속도(速度)가 완만하고 등숙후기(登熟後期)로 갈수록 빠르다. 저온(低溫)에 의(依)한 등숙장해(登熟障害)는 등숙초기(登熟初期)에 크다. 4. 출수후(出穗後) 생육온도(生育溫度)가 낮을수록 립중(粒中)의 탄수화물(炭水化物) 축적(蓄積)이 적고 인산(憐酸), 가리(加里) 및 규산(珪酸)을 시용(施用)함으로서 그 함량(含量)을 크게 증가(增加)시켰다. 5. 수확기(收穫期) 식물체중(植物體中)의 T-N 및 $P_2O_5$ 함량(含量)은 출수후(出穗後) 생육온도(生育溫度)가 낮을수록 높고 $K_2O$와 $SiO_2$는 이와 반대(反對)로 적으며 가리(加里)나 규산(珪酸)이 시용(施用)됨에 따라 그 함량(含量)도 증가(增加)되었다. 6. 수량(收量)과 등숙율(登熟率), 천립중(千粒重) 및 수확기(收穫期) 식물체중(植物體中)의 $K_2O$, $SiO_2$, $K_2O/N$ 및 $SiO_2/N$ 비율(比率)과는 정(正)의 상관(相關)이 있었고 T-N 및 $P_2O_5$와 부(負)의 상관(相關)이 있었다. 7. 등숙율(登熟率)과 천립중(千粒重)은 수확기(收穫期) 식물체중(植物體中)의 $K_2O$, $SiO_2$, $K_2O/N$ 및 $SiO_2/N$ 비율(比率)과 유의성(有意性) 있는 정상관(正相關)을 보여 주었고 T-N 및 $P_2O_5$는 등숙율(登熟率)과는 부(負), 천립중(千粒重)과는 정(正)의 상관(相關)이 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• 한국세라믹학회지
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• 제37권3호
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• pp.247-255
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• 2000

Silicon carbide with sialon was prepared by hot pressing and transient liquid-phase sintering, and the effects of sintering atmosphere and starting phases on their microstructural characteristics were investigated. The sintered SiC with Sialon composition(Y2O3, AlN, Si3N4) in argon atmosphere had high sintered density and large aspect ratio. But sintered specimens in nitrogen atmosphere showed low aspect ratio and small grian size, becuase of the retardation of phase transformation and grain growth. Addition of Y-Sialon powder to SiC also retarded the phase transformation to ${\alpha}$-SiC from ${\beta}$-SiC and densification. The SiC specimen prepared from the starting ${\beta}$-SiC powder with Sialon composition(Y2O3, AlN, Si3N4) showed the highest fracture toughness about 6.0 MPa$.$m1/2.

• 한국세라믹학회지
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• 제31권2호
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• pp.220-226
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• 1994

The hydrolysis and condensation reactions in the mixed alkoxide solutions of Si(OC2H5)4 and Zr(O-nC3H7)4 with various water contents (1, 2, 4, and 8 in molar ratio to alkoxide, r) and catalysts were examined by rheological measurements and the number average molecular weight in order to explain the shape of the polymer in the mixed alkoxide solutions. It was found that fibers could be drawn in the viscosity range of 1∼100P from the acid-catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. On the other hand, crack free bulk gel was formed from the acid-catalyzed solutions including a large amount of water (r 4), and the base-catalyzed solutions. The relation between the intrinsic viscosity [{{{{ eta }}] and the number average molecular weight n, namely [{{{{ eta }}]=Knα, has shown that the acid-catalyzed spinnable solutions (r=1 and 2) have linear polymers and the exponent α's are about 0.56 and 0.81, whereas non-spinnable solutions (r=4 and 8) have three dimensional network polymers or spherical particles and the exponent α's are 0.41∼0.51 and 0.35.

• 한국세라믹학회지
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• 제29권5호
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• pp.357-366
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• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• 한국표면공학회지
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• 제48권5호
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• pp.211-217
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• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• 한국세라믹학회지
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• 제20권1호
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• pp.3-12
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• 1983

In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

• 전기전자학회논문지
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• 제22권4호
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• pp.1230-1233
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• 2018

에어로졸 데포지션 (aerosol deposition)공정을 통해 $Al_2O_3$막을 4H-SiC 상에 50 nm 두께로 제조하였고, 후열처리 공정에 따른 전기적 특성을 분석하였다. 그 결과 $N_2$분위기 열처리 시 $Al_2O_3$와 SiC 계면의 고정전하량이 감소하였으나 산소공공 생성에 의한 누설전류의 증가를 확인하였다. 본 결과로부터 계면특성 향상과 누설전류의 감소를 위해서는 적절한 $N_2$와 $O_2$가스의 혼합이 중요함을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.318-321
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• 2000

We showed that the change of Ar to $N_2$flow during the TiN deposition by the reactive sputtering decides the crystallinity of LPCVD W, as well as the electrical properties of the W-TiN/SiO$_2$Si capacitor. In particular, the threshold voltage can be controlled by the Ar to $N_2$ratio. As compared to the results obtained from the LPCVD W/SiO$_2$/Si MOS capacitor, the insertion of approximately 50 nm TiN film effectively prohibits the fluorine diffusion during the deposition and annealing of W films, resulting in negligible leakage currents at the low electric fields.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.772-775
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• 2013

사파이어 위에 MOCVD로 성장한 p-GaN 위에 PECVD로 $SiO_2$ $2500{\AA}$을 증착하여 열처리실험을 진행하였다. 열처리 후 $SiO_2$ 보호막을 식각하여, 정공 농도를 측정하고, 이를 열처리 전의 데이터 값과 비교, 분석하였다. 또한, 분위기가스인 $N_2$와 $O_2$의 비율, 급속 열처리 온도 ($650^{\circ}C$와 $750^{\circ}C$) 및 시간(1분~15분)에 따른 정공의 이동도와 농도의 변화를 측정하였으며, 상온 및 저온 PL 측정을 통하여 후열처리에 따른 시료의 광학적, 구조적 성질을 조사하였다.