• 한국세라믹학회지
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• 제38권11호
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• pp.1037-1041
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• 2001

저온(32$0^{\circ}C$)에서 SiH$_4$와 $N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

• 한국세라믹학회지
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• 제38권12호
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• pp.1150-1154
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• 2001

플라즈마 화학기상증착(PECVD)법을 이용하여 실리카 광도파막의 코어로 이용되는 규소질산화막(SiON)을 Si 웨이퍼 위에 SiH$_4$,$N_2$O, $N_2$가스를 혼합하여 저온(32$0^{\circ}C$)에서 증착하였다. Prism coupler 측정을 통해 SiON 굴절률 1.4663~1.5496을 얻었으며, SiH$_4$/($N_2$O+$N_2$) 유량비와 rf power가 각각 0.33과 150W에서 8.67$mu extrm{m}$/h의 증착률을 나타내었다. 또한 SiH$_4$/($N_2$O+$N_2$) 유량비가 감소함에 따라 SiON막의 roughness는 41~6$\AA$까지 감소하였다.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• 한국세라믹학회지
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• 제26권1호
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• 한국세라믹학회지
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• 제30권2호
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• pp.85-92
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• 1993

Oxynitride glasses in Na-Ca-Si-O-N system were prepared by melting at 135$0^{\circ}C$ for 2 hours in N2 gas. The effects of Si/Na mole ratio and the various Si3N4 contents were investigated. Stable oxynitride glasses can be obtained up to 9wt.% Si3N4 content in case the Si/Na mole ratio was 2.12 and 1.62, but $\beta$-Si3N4 was precipitated at 9wt.% Si3N4 content in case the Si/Na mole rtio was 1.12. Density (p), chemical durability, hardness (Hv), and fracture toughness (KIC) increased with increasing Si3N4 content. In cae the Si/Na mole ratio was 1.12, the increment of properties was remarkable but hardness and fracture toughness did not increase no longer owing to precipitation of $\beta$-Si3N4.

• 한국정보통신학회논문지
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• 제3권2호
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• pp.471-475
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• 1999

$N{_2}O$ 게이트 산화막을 사용한 nMOSFET가 금속 플라즈마 식각 피해에 대한 면역도가 동일한 두께의 순수한 산화막을 갖는 nMOSFET보다 향상됨을 보여준다. Area Antenna Ratio(AAR)를 증가시킴에 따라 $N{_2}O$ 산화막을 갖는 nMOSFET는 좁은 초기 분포 특성과 정전계 스트레스하에서 더 작은 열화특성을 보이는 데 이는 Si기판과 산화막 계면에서의 질소기의 영향으로 설명되어진다. 또한 $N{_2}O$ 게이트 산화막을 사용하면 순수한 게이트 산화막을 사용할 때 보다 금속 Area Antenna Ratio(AAR)과 Perimeter Area ratio(PAR) 의 최대 허용 크기를 더 증가할 수 있다. 이러한 $N{_2}O$ 게이트 산화막을 갖는 NMOSFET의 개선은 Si기판과 $N{_2}O$ 산화막 계면에 있는 질소기에 의한 계면 강도의 영향 때문으로 판단된다.

• 한국세라믹학회지
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• 제24권1호
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• 한국세라믹학회지
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• 제42권1호
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• pp.16-21
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• 2005

The effect of additive composition, using AlN and $Er_{2}O_{3}$ as sintering additives, on the mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructures developed were quantitatively analyzed by image analysis. The average thickness of SiC grains increased with increasing the $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio in the additives whereas the aspect ratio decreased with increasing the ratio. The mechanical properties versus $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio curve had a maximum; i.e., there was a small composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio ranged from 0.4 to 0.6. The flexural strength and fracture toughness of the SiC ceramics were $550\~650\;MPa$ and $5.5\~6.5$ MPa${\cdot}m^{1/2}$, respectively.

• 한국세라믹학회지
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• 제29권11호
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• pp.837-842
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• 1992

SiC and Si mixtures dispersed by 0.5~10.0 wt% of Al2O3 and reinforced by SiC whisker were sintered to Si3N4 bonded SiC bodies at 140$0^{\circ}C$ in a N2 gas atmosphere, and the nitridation and mechanical properties of sintered bodies were investigated. From these observation, it is concluded that relative density and bending strength increased with the rising of nitridation and the highest nitridation ratio was obtained for a specimen having 1.5 wt% Al2O3. On the other hand, the amount of $\beta$-Si3N4 in the specimens containing Al2O3 more than 5.0 wt% was increased abruptly and the best in fracture toughness was sintered for a composits having 30 wt% SiC whiskers.

• 한국토양비료학회지
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• 제32권1호
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• pp.39-46
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• 1999

Fly ash를 이용(利用)한 zeolite성(性) 물질(物質)의 열수합성(熱水合成)에 있어서 반응재료(反應材料)의 초기구성성분(初期構成成分) 비율(比率)과 여러가지 반응조건(反應條件)이 반응생성물(反應生成物)의 CEC및 결정화도(結晶化度)에 미치는 영향(影響)과 최적반응조건(最適反應條件)을 조사(調査)하였다. $SiO_2/Al_2O_3$ 비율(比率)이 2.55이상(以上)에서는 Na-P1 zeolite가 생성(生成)되었으나, 2.25이하(以下)에서는 hydroxy sodalite가 생성(生成)되었다. 3N-NaOH, $SiO_2/Al_2O_3$ 비율(比率) 2.55, $Na_2O/Al_2O_3$ 비율(比率) 2.0, $103^{\circ}C$에서 12시간(時間) 처리(處理)한 반응생성물(反應生成物)의 CEC 가 $285cmol^+kg^{-1}$으로 다른 반응조건(反應條件)의 생성물(生成物)보다 높았으며, 결정화도(結晶化度)는 2N-NaOH, $SiO_2/Al_2O_3$ 비율(比率) 2.55 $Na_2O/Al_2O_3$ 비율(比率) 2.0, $103^{\circ}C$에서 12시간(時間) 처리(處理)한 반응생성물(反應生成物)이 45.1%로서 가장 높게 나타났다. 반응생성물(反應生成物)의 $SiO_2/Al_2O_3$ 비율(比率)은 fly ash 보다 낮았으며, ignition loss는 결품격자(結品格子) 내(內)의 흡착수(吸着水)에 의해 4.0%로 증가(增加)하였다. 반응생성물(反應生成物)의 XRD peak와 전자현미경사진(電子顯微鏡寫眞)으로 관찰(觀察)한 결과(結果) Na-P1 zeolite의 특징(特徵)을 나타내었다. Fly ash를 이용(利用)한 Na-P1 zeolite의 최적(最適) 열수합성조건(熱水合成條件)은 NaOH 농도(濃度) 2~3N, $SiO_2/Al_2O_3$, 2.55, $Na_2O/Al_2O_3$ 비율(比率) 1.5~2.0, 반응온도(反應溫度) $80{\sim}103^{\circ}C$, 반응시간(反應時間)은 12시간(時間) 이상(以上)으로 판단(判斷)된다.