• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.64-65
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• 2008

3D microbattery에 사용할 수 있는 $LiMn_2O_4$ 3차원 박막전극을 제조하여 그 전기화학적 특성을 관찰하였다. 3차원 구조의 형성을 위하여 먼저 polystyrene(PS) microsphere를 platinum이 증착된 Si/$SiO_2$ 기판위에 dip-coating 방식으로 코팅시켜 template로 사용하였다. 그 위에 sol-gel법을 이용, 박막을 형성시킨 후 template 를 제거하는 방식으로 $LiMn_2O_4$ 3차원 박막전극을 형성하였는데 이때 solution은 Lithium acetylacetonate[$LiCH_3CO-CHCOCH_3$], Manganese(III) acetylacetonate [Mn$(CH_3COCHCOCH_3)_3$]를 source 물질로 1-butanol과 acetic acid를 solvent로 활용하여 제조하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.150-155
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• 2020

Alumina (Al₂O₃) is mainly used as a structural ceramic material and to have good mechanical properties requires a dense microstructure. In commercial fabrication, the liquid phase sintering process is adjusted to reduce the sintering temperature of alumina. In this study, the effect of added amounts of cobalt oxide as a coloring agent on the microstructure and mechanical properties was investigated in the CaO-SiO₂-MgO-system liquid phase sintering of 92 % alumina at various sintering temperatures. When 11 wt% Co₂O₃ was added, a rearrangement of alumina particles, which is the main densification step in liquid phase sintering, occurred from a sintering temperature of 1200℃. Solution re-precipitation and coalescence steps followed from 1300℃ with the grain growth of alumina particles. The addition of excess Co₂O₃ and sintering temperatures above 1400℃ resulted in a decrease in sintered density and Vickers hardness, because of the low viscosity of the liquid phase. In 92 % alumina with the addition of 11 wt% Co₂O₃, a sintered density and Vickers hardness of 3.86 g/㎤ and 12.32 GPa, respectively, were obtained at a sintering temperature of 1350℃.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.66-72
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• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Journal of Environmental Science International
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• v.15 no.6
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• pp.587-592
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• 2006

The advantage of CFBC(Circulating fluidized bed combustor) is that it can apply to various fuel sources including the lower rank fuel and remove SOx by means of direct supply of limestone to the combustor without additional desulfation facility. In this paper, we denote characteristics of fly and bed ash to reuse finer limestone usually abandoned(used spec[Coarse LS] 0.1mm under 25%, new spec[Fine LS] 0.1mm under 50%). According to the results, the chemical composition of fly ash was as follows; $SiO_2\;40.8%,\;Al_2O_3\;31.9%,\;CaO\;10.7%,\;K_2O\;4.46%$ in the case of coarse limestone and $SiO_2\;41.1%,\;Al_2O_3\;31.3%,\;CaO\;10.9%,\;K_2O\;4.66%$ in the case of fine limestone. The chemical composition of bed ash was as follows; $SiO_2\;54.2%,\;Al_2O_3\;33.1%,\;CaO\;1.56%,\;K_2O\;4.34%$ in the case of coarse limestone and $SiO_2\;53.8%,\;Al_2O_3\;32.6%,\;CaO\;2.21%,\;K_2O\;4.45%$ in the case of fine limestone. It showed that there was no significant change in chemical composition. And it is conformed that there was no significant change in particle size and shapes.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.896-899
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• 1999

A carbon dioxide gas sensor was studied as a function of temperature and $CO_2$concentration in the Li$_2$ZrO$_3$ system. Lithium zirconate(Li$_2$ZrO$_3$) was synthesized by the heat-treatment of zirconia(ZrO$_2$)and Lithium carbonate(Li$_2$CO$_3$). The specimens were prepared both as bulk disk, 10mm in diameter and 1.0mm thickness, and thick films on an alumina substrate. Lithium zirconate readily responded to $CO_2$concentration from 0.1% to 100% in the range of 45$0^{\circ}C$ to $650^{\circ}C$. The sensitivity to $CO_2$ was dependent on the measuring temperature. Lithium zirconate(Li$_2$ZrO$_3$) decomposes into Li$_2$CO$_3$ and ZrO$_2$after the reaction with $CO_2$in the range of 45$0^{\circ}C$ to $650^{\circ}C$. Li$_2$CO$_3$ changes into Li$_2$O and $CO_2$ above $650^{\circ}C$. The material showed difficulty with reversibility and recovery. The optimum temperature for the highest sensitivity is around 55$0^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.621-625
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• 1996

A variety of metal oxides were coated by sol-gel process from their metal alkoxides on the ribbons of Co-based and Fe-based amorphous alloys, and the effects of surface oxide coating on the magnetic properties of the alloy are investigated. The core loss is found to be reduced significantly by the oxide coating, the loss reduction becoming more prominent at higher frequencies. The shape of the hystersis loop is also dependent upon the kind of the coated metal oxide. The coatings of MgO, SiO2, MgO·SiO2 and MgO·Al2O3 induce tensile stress into the Fe-based ribbon whereas those of BaO, Al2O3, CaO·Al2O3, SrO·Al2O3 and BaO·Al2O3 induce compressive stress. These results may be explained by the modification of domain structures via magnetoelastic interactions with the shrinkage stress induced by the sol-gel coating.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.519-523
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• 2003

We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.377-392
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• 2012

It has been known that small solid particles act as a stabilizer in pickering emulsion system. In this study, we successfully prepared stable pickering emulsion in n-hexylalcohol and water system with $TiO_2$ whose surface was treated by alkylsilane. The optimum condition to prepare pickering emulsion stabilized by $TiO_2$ particles was determined by amount of $TiO_2$ particles and ratio of water and oil phase. The type of pickering emulsion was dependent on wettability of particles for water and n-hexylalcohol. When the amount of $TiO_2$ particles increased up to 5.00 wt%, the stability of pickering emulsion was showed to be improved. The most stable pickering emulsion was prepared in the case of W/O type which has the ratio of oil and water phase (3 : 7). We tried to prepare porous $SiO_2-TiO_2$ composite pigments using a pickering emulsion as template at the optimal condition. Porous pigments were synthesized with Ludox HS-30 as an inorganic material by sol-gel process. The characteristics and shape of porous pigments were measured by optical microscope, SEM, BET, XRD and EDS.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.