• Journal of the Korean Magnetics Society
• /
• v.17 no.4
• /
• pp.178-181
• /
• 2007

Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.

• Laser Solutions
• /
• v.14 no.3
• /
• pp.1-6
• /
• 2011

Globally, the interest of renewable energy has become an upsurge. Especially, the solar industry is the one which is getting rapid growth rate. Many of researchers have been undertaking to improve the efficiency of solar cell to accomplish grid parity. The most of research has been concentrated on two methods, one on the selective emitter and the other is on LBSF (Local Back Surface Field) formation. Laser patterning will be needed to eliminate the thin film to form selective emitter and LBSF of solar cell. This paper reports some experimental results in laser patterning process for high-efficiency crystalline solar cell manufacturing. The experimental results indicate that the patterning quality depends on the average power and repetition rate of laser. The experimental results prove that the laser patterning process is an advantageous method to improve the efficiency of solar cell.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.3
• /
• pp.87-92
• /
• 1997

Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.3
• /
• pp.1-5
• /
• 2000

Inductively coupled plasma (ICP) excited by a spiral planar antenna is used to etch elctrodes for PZT capacitors. Pt/RuO$_{2}$ bilayers are tested as bottom electrodes for PZT capacitors in order to utilize better leakage characteristics of Pt and easy etch characteristics of RuO$_{2}$ at the same time. The etch rates and selectivities to SiO$_{2}$ hard mask have been measured for each of Pt and RuO$_{2}$ in terms of various plasma conditions. As Cl$_{2}$ ratio increases in $O_{2}$/Cl$_{2}$ mixture, the etch rate of Pt increases while that of RuO$_{2}$ reaches the highest near 10 ％ of Cl$_{2}$. Optimum gas mixture ratio has been determined for etching Pt and RuO$_{2}$ bilayers sequentially, and sub-half micron patterning is demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.209-212
• /
• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.20-25
• /
• 2010

An integrated Mach-Zehnder interferometric sensor operating at 632.8 nm was designed and fabricated by the technology of planar rib waveguides. Rib waveguide based on silica system ($SiO_2-SiO_xN_y-SiO_2$) was geometrically designed to have single mode operation and high sensitivity. It was structured by semiconductor fabrication processes such as thin film deposition, photolithography, and RIE (Reactive Ion Etching). With the power observation, propagation loss measurement by cut-back method showed about 4.82 dB/cm for rib waveguides. Additionally the chromium mask process for an etch stop was employed to solve the core damaging problem in patterning the sensing zone on the chip. Refractive index measurement of water/ethanol mixture with this device finally showed a sensitivity of about $\pi$/($4.04{\times}10^{-3}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.209-212
• /
• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.28.2-28.2
• /
• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.208.1-208.1
• /
• 2015

최근, 차세대 투명 디스플레이 구동소자로서 산화물 반도체를 이용한 Transparent Amorphous Oxide Semiconductor (TAOS) 기술이 큰 주목을 받고 있다. 산화물 반도체는 기존의 a-Si에 비해 우수한 전기적인 특성과 낮은 구동전압 그리고 넓은 밴드 갭으로 인한 투명성의 장점들이 있다. 그리고 낮은 공정 온도에서도 제작이 가능하기 때문에 유리나 플라스틱과 같은 다양한 기판에서도 박막 증착이 가능하다. 하지만 기존의 furnace를 이용한 열처리 방식은 낮은 온도에서 우수한 전기적인 특성을 내기 어려우며, 공정 시간이 길어지는 단점들이 있다. 따라서 본 연구에서는 산화물 반도체중 In-Ga-Zn-O (IGZO)와 In-Sn-O(ITO)를 각각 채널 층과 게이트 전극으로 이용하였다. 또한 마이크로웨이브 열처리 기술을 이용하여 기존의 열처리 방식에 비해 에너지 전달 효율이 높고 짧은 시간동안 저온 공정이 가능하며 우수한 전기적인 특성을 가지는 투명 박막 트랜지스터를 구현 하였다. 본 실험은 glass 기판위에서 진행되었으며, RF sputter를 이용하여 ITO를 150 nm 증착한 후, photo-lithography 공정을 통하여 하부 게이트 전극을 형성하였다. 이후에 RF sputter를 이용하여 SiO2 와 IGZO 를 각각 300, 50 nm 증착하였고, patterning 과정을 통하여 채널 영역을 형성하였다. 또한 소자의 전기적인 특성 향상을 위해 마이크로웨이브 열처리를 1000 Watt로 2 분간 진행 하였고, 비교를 위하여 기존 방식인 furnace 를 이용하여 N2 분위기에서 $400^{\circ}C$로 30분간 진행한 소자도 병행하였다. 그 결과 마이크로웨이브를 통해 열처리한 소자는 공정 온도가 $100^{\circ}C$ 이하로 낮기 때문에 glass 기판에 영향을 주지 않고 기존 furnace 열처리 한 소자보다 전체적으로 전기적인 특성이 우수한 것을 확인 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.93-98
• /
• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)