• Title/Summary/Keyword: $SiO_2$@Eu(III)-$Y_2O_3$

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Photoluminescence Imaging of SiO2@ Y2O3:Eu(III) and SiO2@ Y2O3:Tb(III) Core-Shell Nanostructures

  • Cho, Insu;Kang, Jun-Gill;Sohn, Youngku
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.575-580
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    • 2014
  • We uniformly coated Eu(III)- and Tb(III)-doped yttrium oxide onto the surface of $SiO_2$ spheres and then characterized them by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction crystallography and UV-Visible absorption. 2D and 3D photoluminescence image map profiles were reported for the core-shell type structure. Red emission peaks of Eu(III) were observed between 580 to 730 nm and assigned to $^5D_0{\rightarrow}^7F_J$ (J = 0 - 4) transitions. The green emission peaks of Tb(III) between 450 and 650 nm were attributed to the $^5D_4{\rightarrow}^7F_J$ (J = 6, 5, 4, 3) transitions. For annealed samples, Eu(III) ions were embedded at a $C_2$ symmetry site in $Y_2O_3$, which was accompanied by an increase in luminescence intensity and redness, while Tb(III) was changed to Tb(IV), which resulted in no green emission.

Optical properties of epitaxial $Gd_2$O_3:EU^{3+}$luminescent thin films depending on crystallinity ($Gd_2$O_3:EU^{3+}$ 형광체 박막의 결정성에 따른 발광특성 연구)

  • 장문형;최윤기;정권범;황보상우;장홍규;노명근;조만호;손기선;김창해
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.275-280
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    • 2003
  • Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.

Photoluminescence Characteritics of Electrosprayed Eu(III) Doped Y2O3 Nanorods on a Si Substrate

  • Sin, Won-Gyu;Park, Mi-So;Son, Yeong-Gu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.435-435
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    • 2014
  • Eu(III)-doped Y2O3 nanorods were deposited onto a Si substrate using electrostatic spray system. The photoluminescence imaging profiles were compared between the electrospray film and powder form. Using electrostatic spraying technique is very advantageous to generate a uniform monolayer film without much clustering of nanorods. Strong emission peaks were observed between 580 and 730 nm in response to an indirect excitation transition. Our results indicate that the electrospray technique could be very useful for generating thin films for displays and sensors.

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Structure Study of Polycrystalline $Na_3YSi_3O_9$ and Its Substitutes Related to $Na_4CaSi_3O_9,\;Ca_3Al_2O_6$ Structure

  • Kim, Chy-Hyung;Banks, Ephraim
    • Bulletin of the Korean Chemical Society
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    • v.8 no.1
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    • pp.6-9
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    • 1987
  • The study of the $Na_3YSi_3O_9$ structure, by x-ray diffraction and infrared spectrum, showed that $Na_3YSi_3O_9$ is similar to $Na_4CaSi_3O_9$ except for its being pseudo-cubic instead of cubic. The peaks in the x-ray diffraction pattern of $Na_3YSi_3O_9$ could therefore be indexed on the basis of the $Na_4CaSi_3O_9$ cell. Also, modified $Na_3MSi_3O_9$ (M = Lu, Yb, Tm, Er, Y, Ho, Dy, Gd, Eu, and Sm) type compounds were synthesized by introducing excess sodium, decreasing M(III) concentration, and substituting small amount of phosphorus for silicon. The unit cell parameters of the composition $Na_{3.2}M_{0.7}Si_{2.9}P_{0.1}O_{8.7}$ were estimated from x-ray powder diffraction patterns using the Cohen method.