• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.1
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• pp.27.1-27.1
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• 2011

We obtained the spectra of 93 Planet host stars and 73 normal field stars in F, G, K type using BOES at BOAO. We measured the equivalent width of Fe and 25 elements lines using the automatic EW measurement program, TAME(Tools for Automatic Measurement of Equivalent-widths) and estimated the elemental abundances by synth and abfind driver of MOOG code. Since the absence of planets in the normal field stars cannot be "completely" proved, this work focused on the chemical abundances and planet properties of planet host stars, which have the massive planets close to the parent star relatively. We carried out an investigation for the difference of abundances between stars with "Hot Jupiter" and normal field stars with no known planets. We examined the chemical composition of 25 elements, such as C, N, O, S, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Sr, Y, Zr, Ba, Ce, Nd, and Eu by EW measurements, and the S abundances were estimated using synthetic spectrum. We have found that [Mg/Fe] and [Al/Fe] for planet host stars have lower limit comparing with those of comparison stars, and [Ca/Fe] of host star with Neptunian planets is relatively lower than the other host stars with massive planets. We have performed the Kolmogorov-Smirnov test, and examined the ratio of planet host stars to all stars for each bin of [X/H]. As a result, we noted that the O, Si, and Ca abfor undances are strongly related with the presence of planets.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.200.2-200.2
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• 2013

Yttrium (Y)이 도핑 된 ZnO 나노 구조물을 수열합성법으로 제작하였다. 먼저 졸겔법으로 SiO2/Si 기판 위에 seed layer (Y-doped ZnO ; Y0.02Zn0.98O)를 제작하였으며 5번의 코팅을 진행하여 박막의 두께는 약 180 nm로 측정이 되었다. 그 후 진공 분위기에서 RTA를 이용하여 $500^{\circ}C$에서 3분간 열처리가 진행되었다. 이어서 수열합성법으로 mole 농도를 0.5~1.0 M 범위에서 변화시키며 YZO 시료를 제작하였다. X-ray diffraction (XRD)을 통해서 Y2O3 또는 결함과 관련된 피크는 관찰이 되지 않았으며, 모든 구조물에서 압축응력이 존재하는 알 수 있었으며, field emission scanning electron microscope (FESEM)에서 나노 구조물의 크기와 형태는 수열합성법의 mole 농도에 많은 영향을 받는 것으로 나타났다. Hall effect 측정을 통해서 모든 구조물은 n-type 전도 특성을 가지는 것으로 나타났다. 또한 광학적 특성인 photoluminescence (PL)에서는 수열합성법의 화학식을 고려할 때 Zn가 rich한 상태에서는 Zn interstitial로 존재하는 것으로 나타났고, mole 농도가 높아 질수록 free exciton에 의한 재결합인 UV emission이 우세하게 나타났다.

• Journal of Korean Society on Water Environment
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• v.34 no.6
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• pp.621-631
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• 2018

In this study, catalyst was made through incipient wetness method using palladium (Pd) as noble metal, indium (In) as secondary metal, and montmorillonite (MK10) and Al pillared montmorillonite (Al-MK10) as supporters. The nitrate reduction rate of the catalysts was measured by batch experiments where H2 gas was used as reducing agent and formic acid as pH controller. Transmission electron microscopy (TEM) equipped with energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) were all used to determine the elemental distribution of Pd, In, Al, and Si on catalysts. It was observed that Al pillaring increased the Al/Si elemental composition ratio and point of zero charge of MK10, but decreased its BET specific surface area and pore volume. The nitrate reduction rate of Al-MK10 Pd/In was 2.0 ~ 2.5 times higher than that of MK10 Pd/In using artificial groundwater (GW) in ambient temperature and pressure. Nitrate reduction rates in GW were 1.2 ~ 1.7 times lower than those in distilled deionized water (DDW). Nitrate reduction rates in acidic conditions were higher than those in neutral condition in both GW and DDW. The amount of produced NH3-N over degraded NO3- at acid conditions was lower than that of neutral condition. Even though the leaching of Pd after reaction was measured in DDW it was not detected when both Al-MK10 Pd/In and MK10 Pd/In were used in GW. The modification of montmorillonite as a supporter significantly increased the reductive catalytic activities of nitrates. However, the ratio of producing ammonia by-products to degraded nitrates in ambient temperature and pressure was similar.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.10
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• pp.574-580
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• 2020

An inorganic binder is eco-friendly because it can be cured at low temperatures and does not emit harmful gases. In addition, related research is progressing rapidly owing to the small defects in the core. On the other hand, inorganic binders based on silicates (SiO₂-Na₂O) have unique absorbent properties. This results in the absorption of moisture from the air and the weakening of the bonding force. In particular, the castings used in cast steel require high-strength properties because of the higher temperatures than aluminum castings. In this study, waxes containing ester groups were selected to improve the absorption of moisture of inorganic binders. The inorganic binder was characterized by X-ray fluorescence and thermogravimetric analysis-differential thermal analysis. The inorganic binder core strength was then evaluated. In the case of an inorganic binder containing wax, the water resistance increased to 216 N/㎠, confirming the up to 55% improvement in strength. Excellent casting characteristics were confirmed through steel castings.

• Journal of the Korean Applied Science and Technology
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• v.22 no.1
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• pp.28-34
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• 2005

The structure of a carbon monoxide sorption complex of dehydrated fully $Ca^{2+}$-exchanged zeolite X, $|Ca_{46}(CO)_{27}|[Si_{100}Al_{92}O_{384}]$-FAU, has been determined in the cubic space group $Fd\;{\overline{3}}$ at $21^{\circ}C$ (a = 24.970(4) ) by single-crystal X-ray diffraction techniques. The crystal was prepared by ion exchange in a flowing stream of 0.05 M aqueous ${Ca(NO_3)_2}$ for three days, followed by dehydration at $400^{\circ}C$ and $2{\times}10^{-6}$ Torr for two days, and exposure to 100 Torr of zeolitically dry carbon monoxide gas at $21^{\circ}C$. The structure was determined in this atmosphere and was refined, using the 356 reflections for which $F_o$ > $4{\sigma}(F_o)$, to the final error indices $R_1$ = 0.059 and $wR_2$ = 0.087. In this structure, $Ca^{2+}$ ions occupy three crystallographic sites. Sixteen $Ca^{2+}$ ions fill the octahedral site I at the centers of hexagonal prisms (Ca-O = 2.415(7) ${\AA}$). The remaining 30 $Ca^{2+}$ ions are found at two nonequivalent sites II (in the supercages) with occupancies of 3 and 27 ions. Each of these $Ca^{2+}$ ions coordinates to three framework oxygens, either at 2.276(10) or 2.298(8) ${\AA}$, respectively. Twenty-seven carbon monoxide molecules have been sorbed per unit cell, three per supercage. Each coordinates to one of the latter 16 site-II $Ca^{2+}$ ions: C-Ca = 2.72(8) ${\AA}$. The imprecisely determined N-C bond length, 1.26(14) ${\AA}$, differs insignificantly from that in carbon monoxide(g), 1.13 ${\AA}$.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1133-1136
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• 1995

RF-magnetron sputtering 방법으로 형성한 $BaTa_2O_6$의 공정변수에 따른 전기, 광학적 특성변화를 관찰하여 $BaTa_2O_6$ 박막의 TFELD(thin film electroluminescent display) 절연막으로서 응용 가능성을 연구하였다. $BaTa_2O_6$ 박막의 유전특성은 증착시의 $O_2$ 함량과 sputtering 압력의 변화에는 큰 영향을 받지 않으나 기판온도에는 영향을 받는 것으로 확인되었다. 이들 공정변수를 가변하여 실험한 결과, $BaTa_2O_6$ 박막 형성의 최적조건으로 플라즈마 압력을 6 mtorr, sputtering gas 내의 $O_2$ 혼합비율은 40%, 기판온도는 $100^{\circ}C$로 결정하였다. 이상의 조건에서 제조된 $BaTa_2O_6$ 박막은 10.2 ${\mu}C/cm^2$의 매우 우수한 성능지수를 보였다. 이상의 $BaTa_2O_6$ 박막을 하부절연층으로, 절연파괴강도가 높은 $SiO_xN_y$를 상부 절연층으로 사용하여 제조된 EL 소자는 1 kHz, 삼각파 구동시 발광 임계전압은 약 32 volts, 최대휘도는 54 $cd/m^2$으로 측정되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1244-1247
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• 2004

For obtaining the best panel quality of color filter on array(COA) architecture in TFF LCD, we investigated the influence of deposition temperature, $O_2$ flow, thickness on the optical transmittance, wet etching and adhesion properties of IZO deposited onto each color photo resist(red, green, blue). Average transmittance of the pixel single layer in the visible range(between 380 and 780nm) was mainly affected by thickness and showed maximum at 1250 ${\AA}$ while the thickness showing peak transparency in each R, G, B wavelength was different. The relation was calculated by using bi-layer transmission and reflectance model, which corresponded to experimental data very well. The adhesion of IZO deposited on each color PR was found to have enhanced value except red PR case, compared to that of IZO which was deposited on $SiN_x$. Wet etching pattern linearity was decreased as the thickness increased. The thickness of IZO was one of vital factors in order to optimize overall pixel process for fabricating COA structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1032-1038
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• 2000

Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.