• Title/Summary/Keyword: $SiN_{x}$

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Fabrication of the CNT-FET biosensors with a double-gate structure (더블 게이트 구조의 탄소 나노 튜브 트랜지스터 바이오 센서의 제작)

  • Cho, Byung-Hyun;Lim, Byoung-Hyun;Shin, Jang-Kyoo;Choi, Sung-Wook;Chun, Hyang-Sook
    • Journal of Sensor Science and Technology
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    • v.18 no.2
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    • pp.168-172
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    • 2009
  • In this paper, we present the carbon nanotube field-effect transistor(CNT-FET) with a double-gate structure. A Carbon nanotube film was aligned by the Langmuir-Blodgett technique and $SiN_x$ was deposited to protect from water, oxygen, and other contaminants. We measured the electrical characteristics of the proposed device as the function of the $V_{BG}$, $V_{TG}$. From this result, we can confirm that proposed device might be employed as a biosensor.

2축 로드셀 기반 스크레치테스터의 제작 및 평가

  • 이정일;김종호;이효직;오희근;박연규;강대임
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.05a
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    • pp.170-170
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    • 2004
  • 박막의 접착강도를 측정하기 위하여 수직력과 수평력을 동시에 측정할 수 있는 0.1∼100 N 용량의 2축 로드셀에 기반을 둔 스크레치 테스터를 개발하였다. 반도체용 Si wafer 기판 위에 Au나 Al 등의 금속이 관은 박막으로 증착된 제품을 table에 고정시킨 후, 2축 로드셀(x, z)이 장착된 하중센서의 선단에 Diamond Tip을 장착하여 기판과 박막에 하중(z-axis)을 증가시키면서 동시에 wafer를 x축 방향으로 이동시킨다. 이런 방식으로 시료의 표면을 긁으면 박막이 벗겨져 나가 Diamond Tip이 기판에 닿을 때 서로 다른 경도차에 의해 진동이 발생하게 되고, 이 진동을 Acoustic Emission 센서에서 감지하여 Crack 발생 시점의 Load와 Stroke를 찾아내게 된다.(중략)

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Global Far-UV Emission-line Images of the Vela Supernova Remnant

  • Kim, Il-Joong;Seon, Kwang-Il;Min, Kyoung-Wook
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.110.2-110.2
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    • 2011
  • Nishikida et al. (2006) presented the first far-ultraviolet (FUV) em${\lambda}$ission-line images of the Vela supernova remnant (SNR) obtained with FIMS/SPEAR instrument. Those include C III ${\lambda}$977, O VI ${\lambda}{\lambda}$1032, 1038, Si IV+O IV] ${\lambda}{\lambda}$1393, 1403 (un-resolved), C IV ${\lambda}{\lambda}$1548, 1551 emission-line images. As a following work, we re-constructed these emission-line images using the new-version processed FIMS/SPEAR data. Additionally, we made N IV] ${\lambda}$1486, He II ${\lambda}$1640.5, O III] ${\lambda}{\lambda}$1661, 1666 emission-line images. The new-version images cover the whole region of the Vela SNR and show more resolved features than the old-version. We compare these FUV emission-line images with other wavelength (X-ray, optical, etc.) images obtained in previous studies.

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Preparation of Carbon-Containing Silica Glass by Heat Treatment of Ormosil (세라믹/고분자 복합체의 열처리에 의한 탄소 함유 실리카 유리의 제조)

  • 김구대;이동아;박지애;문지웅
    • Journal of the Korean Ceramic Society
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    • v.36 no.5
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    • pp.459-464
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    • 1999
  • A carbon-containing silica glass was prepared from orgaincally modified silicate(Ormosil) by heat treatment in N2 atmosphere after the ormosil was synthesized using sol-gel method. The Ormosil was fabricated from the TEOS as the inorganic component and the PDMS as the organic component. The Ormosil changed to balck-coloured glass by carbon decomposed from the PDMS when the Ormosil was heated to 450$^{\circ}C$ 20hrs. A dense silicon oxycarbide glass with 2.08 g/cm3 was obtained by heating the Ormosil at 1050$^{\circ}C$ 10hrs. The microstructure of the carbon-containing silica glass was observed by SEM and the SiOxC4-x structure was confirmed by XPS measurement. The densification of the glass was studied by measurements of specific surface area linear shrinkage and geometric density.

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The Equilibrium Model of MoO$_3$ Containing Phases Supported in Silica

  • Lee, Do-Hyun;Ha, Jin-Wook
    • Proceedings of the KAIS Fall Conference
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    • 2001.05a
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    • pp.287-289
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    • 2001
  • The morphology of silica supported MoO$_3$ catalysts, which was prepared by impregnation of ammonium heptamolybdate with various weight loadings up to 35 wt%, was studied using x-ray diffraction. In addition to the orthorhombic phase, the behavior of the rarely studied hexagonal phase was characterized. For high loading catalysts, excess ammonium ions present in the monoclinic and triclinic precursors are capable of occupying interstitial sites of microcrystalline MoO$_3$ during moderate temperature calcinations and in doing so enhance the MoO$_3$-SiO$_2$ interaction. This results in a "well dispersed" morphology at high loadings. Sintering at high temperature is due to loss of ammonium from the oxide framework. Ammonia reimpregnation, which leads back to the well dispersed hexagonal phase, may offer a simple regeneration process for spent Mo containing catalysts.

Development of BiPbSrCaCuO Superconductor by Diffusion of Dual-Layer Sample (이중층 시료에서 확산에 의한 BiPbSrCaCuO 초전도체 개발)

  • 최성환;박성진;유현수;강형곤;한병성
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.5
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    • pp.795-801
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    • 1994
  • The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

ANALYSIS OF THE ANODIC OXIDATION OF SINGLE CRYSTALLINE SILICON IN ETHYLEN GLYCOL SOLUTION

  • Yuga, Masamitsu;Takeuchi, Manabu
    • Journal of Surface Science and Engineering
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    • v.32 no.3
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    • pp.235-238
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    • 1999
  • Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.

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Influences of Forest Environmental Factors on Turbidity of Stream Water (산림환경인자가 계류수의 탁수화에 미치는 영향)

  • Ma, Ho-Seop;Kang, Won-Seok;Kang, Eun-Min
    • Journal of Korean Society of Forest Science
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    • v.101 no.4
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    • pp.574-578
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    • 2012
  • This study was carried out to clarify the influences of forest environmental factors on turbidity of Stream water on three stands (Castanea crenata, Pinus densiflora and Plantation Land) of small watershed in Samgyeri Naedong-myeon Jinju-si Gyeongsangnam-do. The relationship between turbidity and forest environmental factors was a positive correlation at 1% level with chromaticity, suspended solid, sediment runoff erosion, slope, rainfall intensity, preceding dry days, watershed area and stream length and at 5% level with accumulative rainfall. The important factors that affected turbidity in small watershed showed in order of preceding dry days, rainfall intensity, stream length, chromaticity and suspended solid. In the stepwise regression between turbidity and forest environmental factors, the estimation equation is as follow; Y=-28.125+0.047x (suspended solid)+0.058x (chromaticity)+1.518x (rainfall intensity)+0.264x (stream length)+1.837x (preceding dry days). The results indicates that dangerous areas of landslide and soil runoff by land use could be applied to the mitigation measures such as afforestation, erosion check dam and revetment for erosion control and water quality management in small watershed.

Copper Film Growth by Chemical Vapor Deposition: Influence of the Seeding Layer (ICB seeding에 의한 CVD Cu 박막의 증착 및 특성 분석)

  • Yoon, Kyoung-Ryul;Choi, Doo-Jin;Kim, Seok;Kim, Ki-Hwan;Koh, Seok-Keun
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.723-732
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    • 1996
  • Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

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