• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.325-325
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• 2006

Cationic polymerization of isobutyl vinyl ether using various metal halides was examined in toluene in the presence of an added base at $0^{\circ}C$. In conjunction with an appropriate weak base such as ethyl acetate or 1,4-dioxane, all metal halides but $FeBr_{3}\;and\;GaCl_{3}$ led to living cationic polymerization. The polymerization rates varied as follows: $FeBr_{3},\;GaCl_{3}\;>\;FeCl_{3}\;>\;SnCl_{4}\;>\;InCl_{3}\;>\;ZnCl_{2}\;>>\;AlCl_{3},\;HfCl_{4},\;ZrCl_{4}\;>\;EtAlCl_{2},\;BiCl_{3},\;TiCl4\;>>\;SiCl_{4}\;>\;GeCl_{4}$. This order partially corresponds to that of the equilibrium constant in the formation of a carbocation from a chloroalkane in the presence of a carbonyl compound. With extremely active Lewis acids, such as $FeBr_{3}\;and\;GaCl_{3}$, the use of a stronger base, THF, was required to achieve living polymerization.

• Elastomers and Composites
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• v.48 no.4
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• pp.269-275
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• 2013

In this study, we prepared poly(ethylene-ter-1-hexene-ter-divinylbenzene) using various metallocene catalysts with trityl tetrakis(pentafluorophenyl)borate/triisobutylaluminium cocatalysts system. We tried rac-$Et(Ind)_2ZrCl_2$, rac-$SiMe_2(Ind)_2ZrCl_2$, and rac-$SiMe_2(2-Me-Ind)_2ZrCl_2$ to choose optimum metallocene catalyst, comparing with catalytic activity, molecular weight, molecular weight distribution of the terpolymers. To study the effects of chain length of high ${\alpha}$-olefins on the terpolymerization, we synthesized the terpolymers using 1-hexene, 1-octene, 1-decene or 1-dodecene. We characterized chemical composition, thermal properties, and mechanical properties of the terpolymers.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.405-412
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• 2009

In high temperature ceramic glazes, a stable range of pink-red colors that produced $Cr_2O_3-SnO_2-CaO-SiO_2$ pigments were factored by Cassiterite($SnO_2$) and Malayaite($CaSnSiO_5$) by $Cr_2O_3$. The experiment examined the influence of $CrCl_3$, a Sn-Cr substitution added with a mineralizer ($H_3BO_3$), as a chromophore in pigments. The experiment also studied the effect of $H_3BO_3$ (2 wt%) when added to malayaite($CaSnSiO_5$) to see if the crystalline reaction will increase. $Cr_2O_3$ was also substituted with $CrCl_3$ in order to prove how much influence $CrCl_3$ had on the $H_3BO_3$. Malayaite and cassiterite were the basic compound materials and the experiment was conducted both with and without mineralizers (2 wt% of $H_3BO_3$). Each compound was synthesized at 800, 1000, 1200, 1300, 1400, $1500^{\circ}C$ for 2 h. Synthesized pigments were analyzed by XRD, FT-IR and UV-Vis. The temperature variation produced two crystal phases that showed the different engaging effects of Cr oxidation. $CrCl_3$ produced a better effect on the malayaite crystal phase, resulting in a more defined pigmentation of the pink-red coloration compared to $Cr_2O_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Elastomers and Composites
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• v.54 no.4
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• pp.286-293
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• 2019

In this study, flexible poly(ethylene-ter-1-hexene-ter-divinylbenzene) was prepared using four types of metallocene catalysts (rac-Et(Ind)₂ZrCl₂, rac-SiMe₂(Ind)₂ZrCl₂, rac-SiMe₂(2-Me-Ind)₂ZrCl₂, (C₅Me₅)TiCl₂[O-2,6-ⁱPr₂(C₆H₃)]) and two types of borate catalysts (trityl tetrakisborate and dimethylanilinium tetrakisborate). The yield, catalytic activity, molecular weight, structure, composition, and thermal properties of the terpolymers prepared using the various catalysts and cocatalyst systems were evaluated. Epoxidation of the terpolymers was successfully performed and this transformation was studied by ¹H NMR and FTIR.

• Journal of the korean academy of Pediatric Dentistry
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• v.29 no.3
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• pp.469-477
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• 2002

One of the major deficiencies of composite restorative resins is their insufficient resistance to wear. Of the multitude of factors that have been associated with wear, subsurface degradation within the restoration is considered to be one. The aim of this study was to evaluate the resistance to degradation of four commercial composite resins in an alkaline solution. The brands studied were Z100(3M), Clearfil AP-X(Kuraray), Tetric Ceram(Vivadent), Aelit flo(Bisco). Resistance to degradation was evaluated on the basis of the following parameters: (a) mass loss(%) - determined from pre-and post-exposure specimen weights: (b) Si loss(ppm) - obtained from ICP-AE analysis of solution exposed to specimens; and (c) degradation depth(${\mu}m$) - measured microscopically (SEM) from polished circular sections of exposed specimens. The results were as follows: 1. The sequence of the mass loss was in ascending order by AE, EL, TC, Z100. There was statistically significant difference of mass loss between AE, CL group and TC, Z100 group(p<0.05). 2. The sequence of the degree of degradation layer depth was in ascending order by AE, CL, TC, Z100. But there was no statistically significant difference of degree of degradation layer depth between AE and CL(p<0.05). 3. For the Si concentration, Z100 was the highest of all. 4. The correlation coefficient between mass loss and degradation depth was relatively high(r=0.71 p<0.05).

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.137-143
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• 2005

CrSiN coatings of stepwise changing Si concentration were deposited on stainless steel by closed field unbalanced magnetron sputtering (CFUBM) system. Microstructure of the films due to the Si concentration is measured by XRD. The corrosion behavior of CrSiN coatings in deaerated $3.5\%$ NaCl solution was investigated by potentiodynamic test, electrochemical impedance spectroscopy (EIS) and surface analyses. The microstructure of CrSiN film depends on the Si concentration. When Si/(Cr+si) was under $11.7\%$, preferred orientation is defined at CrN(220), CrN(311) and $Cr_2N(111).$ The results of potentiodynamic polarization tests showed that the corrosion current density and porosity decreased with increasing Si/(Cr+si) ratio. EIS measurements showed that the corrosion resistance of Si-bearing CrN was improved by phase transformation of the film, which leads to increase of pore resistance and charge transfer resistance. At the Si(Cr+si) ratio of 20, the Si-bearing CrN possesses the best corrosion resistance due to the highest pore resistance and charge transfer resistance.

• Economic and Environmental Geology
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• v.36 no.5
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• pp.339-347
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• 2003

Using 171 groundwater chemistry data, seawater intrusion in the Ulsan area was studied. The area near the downstream area of the Taehwa River shows the higher Cl concentrations(11,300 mg/L in maximum), whereas the Cl concentrations are generally low in the eastern coastal area maybe due to the geology of the area. When Cl concentrations are very low, groundwater shows Br:Cl weight ratios significantly deviating from the Br:Cl ratio of seawater($34.7{\times}10^{-4}$). However, Br:Cl ratios are very close to the value of seawater when Cl concentrations are higher than 100 mg/L. Eleven groundwater samples having very high Cl concentrations(>500 mg/L) show that ionic ratios for Ca, Mg, $SO_4$, $HCO_3$ and $SiO_2$ are considerably different from those of seawater. This indicates that the origin of the high Cl groundwaters occurring along the Taehwa River are likely to be the residual salines from the salterns previously located on the alluviums rather than the seawaters intruded recently. These waters seem to be accumulated in the sediments before the drastic expansion of the city. Considering the characteristics of the urban groundwater system where the inflow exceeds the outflow, it is anticipated that the high Cl concentration in the groundwater show a decreasing trend in the future.

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.427-430
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• 1999

The Grignard coupling reaction of bis(chloromethyl)diorganosilanes [(ClCH2)2SiR1R2: R1 = R2 = Me, la; R1 = Me, R2 = Ph, lb; R1 = R2 = Ph, lc] with diorganodichlorosilanes [(Cl2SiR3R4: R3 = R4 = Me, 2a; R3 = Me, R4 = Ph, 2b; R3 = R4 = Ph, 2c] at THE reflux temperature gave the intermolecular C-Si coupling product of 1,1,3,3-tetraorgano-1,3-disilacyclobutanes 3a-f in poor to moderate yields ranging from 7% to 50% along with polydiorganosilapropanes. The cyclization reaction of la-c with methyl-substituted dichlorosilanes 2a, b gave 1,3-disilacyclobutanes 3a-c, e, d in moderate yields (42-50%), while the same reaction with dichlorodiphenylsilane (2c) to 1,3-disilacyclobutanes 3d, f resulted in low yield (7-18%) probably due to the steric hindrance of two-phenyl groups on the silicon of 2c.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.56-62
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• 1999

In this study, (Ba, Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as rf power, dc bias voltage, and chamber pressure. The etch rate was 56 nm/min under $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2, rf power of 600 W, dc bias voltage of 250 V, and chamber pressure of 5 mTorr. At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba, Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). Ba is removed by chemical reaction between Sr and Cl to remove Sr. Ti is removed by chemical reaction such as $TiCl_4$ with ease. The results of secondary ion mass spectrometer (SIMS) analysis compared with the results of XPS analysis and the results were the same.