• Journal of Wetlands Research
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• v.19 no.3
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• pp.303-310
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• 2017

This paper is to understand the settling properties of cohesive sediments under effects of ions in turbulent flow. The experiments were conducted using a miniature annular flume(mini flume) with a free water surface. Silica was used as sediment of experiment. The suspended concentrations were measured by using a CCD-Camera. Settling of silica($SiO_2$) was allowed to occur under various shear stresses in a concentration of 7g/L. At condition of pH 4.2 and high NaCl concentration, the floc size D of silica was larger than D at condition of pH6.8 with the bed shear stress increasing. The settling velocity $W_s$ of silica was higher at condition of 10g NaCl/L than $W_s$ at condition of pH4.2. Comparison of measured concentration-time curves and concentration-time curves calculated by this study showed similar tendency in flow under effects of ions.

• Polymer(Korea)
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• v.32 no.3
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• pp.239-245
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• 2008

Block copolymers of the general formula $[(-CO-R'-CO-HN-Ar-NH-CO-R'-CO)_xNH(CH_2)_3-(Me_2SiO)_y(CH_2)_3NH_2]_n$, [n=18.00 to 1175.0] where $R'=CH_2CH(CH_2GeCl_3)$;$CH_2CHGeCl_3CH_2$; and $Ar=-C_6H_4$;$-(o.CH_3C_6H_4)_2$;$-o.CH_3OC_6H_4)_2$;$-(o.CH_3C_6H_4)$ were prepared by a polycondensation reaction of polyamide containing a pendant trichlorogermyl group and terminal acid chloride $Cl(-CO-R'-CO-NH-Ar-NH-CO-R'-CO-)_xCl$ with aminopropyl-terminated polydimethylsiloxane $H_2N(CH_2)_3(Me_2SiO)_y-(CH_2)_3NH_2]$, (PDMS). These polymers were characterized by elemental analysis, $T_g$, FT-IR, $^1H$-NMR, solid state $^{13}C$-NMR, and molecular weight determination. The thermal stability of these copolymers was examined using thermal analysis techniques, such as TGA and DSC. Their molecular weights as determined by laser light scattering technique ranged $5.13{\times}10^5$ to $331{\times}10^5\;g/mol$. These polymers display their $T_g$ in the range of 337 to $393^{\circ}C$ with an average decomposition temperature at $582^{\circ}C$.

• The Journal of Engineering Geology
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• v.30 no.3
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• pp.379-397
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• 2020

In this study, Long-term change of water quality in Donrae Hot Spring was characterized using water quality data from 1922 to 2019. According to Mann-Kendall analysis and Sen's slope using long-term water quality data of Dongnae Hot Spring from 1922 to 2019, temperature, Ca, SiO₂, and HCO₃ show an increasing trend whereas EC, Na, K, Mg, Cl, and SO₄ show a decreasing trend or negligible trend. In addition, the water type of Dongnae Hot Spring stably belongs to Na-Cl type over time. The spatial distributions of water temperature and chemical constituents in 2004, 2009, 2014, and 2019 show variable patterns with showing some difference depending on sampling locations in different years. These results indicate that despite the long-term pumping of the hot spring water, the water quality is quite stable during the entire study period.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1092-1095
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.101-105
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• 1998

This paper describes anisotropic etching technology of highly doped polysilicon. The main etching gases are $Cl_2$ and $SiCl_4$ for reactive ion etching of polysilicon. The mixed $CHCl_3$ to main etching gas makes polymer on etching side wall, so it prevents side etching of polysilicon. The etch rate of polysilicon is increased with increasing RF power. But the etching rate is decreased as the flow rate of $CHCl_3$ is increased with fixed RF power. The etch selectivity of polysilicon and $SiO_2$ is about 12:1. And that of polysilicon and $Si_3N_4$ is about 19:1. In the main etching gas condition, the slope of polysilicon is same as that of photoresist. But in the mixed $CHCl_3$ condition, the slope of polysilicon is larger than that of photoresist. This represents that the polymer made on side wall by added $CHCl_3$ prevents side etching, so anisotropic etching can be possible by polymer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.251-251
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• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

• Journal of Surface Science and Engineering
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• v.25 no.5
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• pp.215-221
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• 1992

This research is aimed at developing(110) preferred TiS2 cathode films and glass typed solid electro-lytes which have high ionic migrations and low electron conductivities for thin secondary solid batteries. To obtain preferred oriented TiS2 thin films on a substrate by CVD method using TiCl4 and H2S gases three factors of heating temperature, inner pressure of furnace and TiCl4/H2S gas mole fraction were ex-amined systematically. To obtain solid films of Li2O-B2O3-SiO2 electrolytes by r.f. sputtering for thin proto-type batteries of Li/Li2O-B2O3-SiO2TiS2, sputtering conditions were examined. TiS2 cathode films showed columnar structure, namely c axis oriented parallely. At low pressure of reaction chamber and low heating temperature, surface of smooth TiS2 films couldd be obtained. Ionic conductivity of Li2O-B2O3-SiO2 films manufactured by r.f. magnetron sputtering were 3$\times$10-7$\Omega$-1cm-1 and electron conductivities were 10-11$\Omega$-1cm-1. Open cell voltage of thin lithium batteries were 2.32V with a designed prototype cell.

• Journal of the Korean Ceramic Society
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• v.14 no.4
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• pp.230-235
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• 1977

In this paper the conditions of surface crystallization of glass were studied. The basic glass which is apt to crystallize, with $SiO_2$ 72.50, $Al_2O_3$ 5, 00, $Na_2O$ 8.00 $K_2O$ 3.50, CaO 5.00, MgO 3.00, $B_2O_3$ 3.00 Wt% is chosen. The strain point and softening point of this glass is 4$25^{\circ}C$ and 778$^{\circ}C$ each, and between the two temperatures we could get grystal on its surface by immersion in salt baths during some controlled hours. The kind of crystal on the surface of glass was confirmed by X-ray diffraction analysis and the change of the thickness of crystalline layers depending on temperature and time, was surveyed by using optical microscope. The results are as follows; 1. The chloride group is more suitable than sulfate group for the treating salt. 2. In the condition with 50 LiCl.50NaCl at 62$0^{\circ}C$ for 2 hrs and with 50 LiCL.20-30 NaCl.30-20 $CaCl_2$ at 72$0^{\circ}C$ for 15-20 min. we could get the best crystalline layers. 3. The crystal was silica-O and petalite with a little tridymite and nepheline. 4. The thickness of crystalline layers increased with increasement of temperature and time.

• Journal of Surface Science and Engineering
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• v.27 no.1
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• pp.3-11
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• 1994

Cyclic hot corrosion studies have been carried out on(82~94) wt. % Fe-(5, 10, 15) wt. % Cr alloys con-taining either (1, 3)wt. % of Si or Pt as minor alloying elements in molten salts of($Na_2SO_4$+NaCl) between 820 and $920^{\circ}C$. Si or Pt decreased corrosion rate with the most pronounced effect being observed for alloys having 15wt. %Cr. Especially, as Si or Pt contents are increased from 1 to 3 wt. %, improved corrosion resistance was obtained. The beneficial effect of Si addition is due to the presence of the Si-rich second phase along the grain boundaries as well as the formation of the protective $SiO_2$layer between substrates and oxide scale. The Pt addition also increased the corrosion resistance by enhancing the formation ($Cr_2O_3$+layers and by increasing the adherence of the oxide scale.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.245-248
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• 1997

Photoluminescence (PL) and cathodoluminescence (CL) characteristics of Ce-activated $Y_{2-x}Ce_xSiO_5$ have been investigated as functions of Ce concentration and firing condition. According to the X-ray, PL and CL results, $Y_2SiO_5$ is found to have two phases depending on the firing temperature. For the specimen fired above 127$0^{\circ}C$, the emission band peaked at 395nm with a shoulder at 424 nm under ultraviolet (u.v.) and cathode-ray (c.r.) excitation. However, for the specimen fired below 120$0^{\circ}C$ in air the peak was observed at 424 nm and it shifted to longer wavelength with reduction level. The reduced specimen for x=0.02 showed the brightest emission under u.v. excitation whereas under c.r. excitation the brightest emission was observed for the reduced specimen for x=0.06.