• Title/Summary/Keyword: $RFe_2O_4$

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The Research about the Correlation Between the Spontaneous Polarization of LuFe2O4 and Behavior of Iron by Mössbauer (뫼스바우어 분광법을 이용한 LuFe2O4의 자발분극과 철 이온의 거동과의 상관관계에 대한 연구)

  • Bang, Bong-Kyu;Kim, Chul-Sung;Kim, Sung-Baek;Cheong, S.W.
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.10-13
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    • 2007
  • Single crystalline, $LuFe_2O_4$, was grown by the floating zone method. The crystal structure was a two-dimensional layered-type rhombohedral($R\={3}mh$) structure, with an $a_0=3.440(2)\;{\AA}\;and\;a\;c_0=25.263(2)\;{\AA}$. The magnetic $N\'{e}el$ temperature($T_N$) was determined to be 250 K. The $M\"{o}ssbauer$ spectrum at 12 K was fitted with four sextet sets which was resulted from the crystal structure. The spectrm at room temperature consisted of three singlets and a doublet with the electric quadrupole splitting. The isomer shift($\delta$) value of the singlet was $0.20{\pm}0.01mm/s$ relative to the Fe metal indicating the $Fe^{3+}$ valence state, and the value of the doublet was $0.70{\pm}0.01mm/s$ indicating $Fe^{2+}$. The $M\"{o}ssbauer$ absorption area ratio between $Fe^{3+}$ and $Fe^{2+}$ at room temperature was 1:1. The doublet phase of spectra gradually disappears by up to 360 K. At 360 K, the spectrum shows the singlet phase. We suggested that the spontaneous polarization effect of $LuFe_2O_4$ was caused by the change of iron behavior.

The Design and implementation of a Low Noise Amplifier for DSRC using GaAs MESFET (GaAs MESFET을 이용한 DSRC용 LNA MMIC 설계 및 구현)

  • Moon, Tae-Jung;Hwang, Sung-Bum;Kim, Byoung-Kook;Ha, Young-Chul;Hur, Hyuk;Song, Chung-Kun;Hong, Chang-Hee
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.61-64
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    • 2002
  • We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

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