• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.91-93
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• 1989

x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.53-53
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.300-308
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• 1982

A new perovskite type compound, (Pb1a-χKy□χ-y) (Zr0.33Ti0.67)O3-χ+y/2 was proposed and synthesized by "Wet-Dry Combination Technique". This defect ferroelectric material was characterized by partial substitutions of K+ for Pb+2 in Pb(Zr0.33Ti0.67)O3. This material was mono-phasic perovskite compound at 800℃ for 1hr., but ZrO2 was more or less isolated from the (Pb1a-χKy□χ-y) (Zr0.33Ti0.67)O3-χ+y/2. As a result, snitering temperature, sintered density, curie temperature, and dielectric constant of test pieces decreased and a-axis was nearly constant, while c-axis gradually decreased with the value x in the region of tetragonal phase of PZT. It was also recognized that the defect structure caused by adding K+ was found in both A-site cation and O-site anion vacancies in the defect PZT.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.581-586
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• 1994

Effect of excess and deficiency of PbO on the sintering and electrical properties of tetragonal Pb(Zr0.5Ti0.5)O3 were investigated. Fired density revealed maximum value with 4 wt% of excess PbO, and decreased with increasing amount of both excess and deficient PbO. Grain size increased with excess PbO, and decreased with deficiency of PbO. It appeared that excess PbO forms a liquid phase to enhance grain growth and completely volatilizes after sintering, whereas ZrO2 particles formed in PbO-deficient PZT inhibit grain growth. The change in the values of the equivalent circuit elements of PZT corresponded well with thar of porosity formed by excess and deficiency of PbO; kp, Co and Cm decreased while Qm, Rm and Lm increased conosiderably with porosity. This change was more pronounced in PbO-deficient type probably due to change in Zr/Ti ratio of PZT.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.79.2-79.2
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• 2004

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1586-1588
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• 2003

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.571-576
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• 1988

The microstructure and electrical properties of 0.02Pb[Cd1/2W1/2)O3-0.505PbZrO3-0.475PbTiO3 with MnO2 addition have been investigated. The amount of MnO2 addition was 0, 0.2, 0.4, 0.6, 0.8, 1wt%, respectively. When MnO2 is added up to 0.2wt%, Mn3+ which is substituted for Ti4+ site make hole and act as a acceptor. When MnO2 is added over 0.2wt% Mn3+ which is substituted for Cd2+ site create electron and act as a donor. The variation of grain size show that it was rapidly increased by 0.4wt% addition of MnO2, and while that in the range of over 0.6wt% addition of MnO2 it was decreased. The solid solution range of MnO2 that assumed in this composition according to the variations of microstructure and electrical properties was 0.4-0.6wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1195-1199
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• 2003

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT[0.91Pb(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$0.03/(Zr$\sub$0.495/Ti$\sub$0.505/)$\sub$0.97/O$_3$-0.04Pb(Ni$\sub$1/2/W$\sub$1/2/)O$_3$+0.05BiFeO$_3$+0.3wt％MnO$_2$+0.6wt％CuO〕 ceramics were investigated according to Zr/Ti ratio. As Zr/Ti ratio is increased, electromechanical coupling factor(k$\sub$p/) and dielectric constant increased and then decreased after the ratio of Zr/Ti=50/50. Also, mechanical qualify factor(Q$\sub$m/) decreased and then increased after the ratio of Zr/Ti=50/50.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.202-209
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• 2005

Phase evolution, microstructure and the electrical properties such as $k_p$ and $Q_m$ of $Pb(Mg_{1/3}Nb_{2/3})O_3[PMN]-Pb(Mn_{1/3}Nb_{2/3})O3[PM'N]-PbZrO_3[PZ]-PbTiO_3[PT]$ quaternary system were investigated within the compositional ranges $0{\leq}y{\leq}0.125$, y+z=0.125, and $0.39{\leq}x{\leq}0.54$ of the formula $Pb_{0.97}Sr_{0.03}[Mg_{1/3}Nb_{2/3})_y\;(Mn_{1/3}Nb_{2/3})_z\;(Zr_{x}Ti_{1-x})_{1-(y+z)}]O_3$. In the case of increasing Mn/(Mg+Mn) ratio for a fixed Zr/Ti ratio of 47.5/52.5, phase relation remained unchanged but the grain size drastically decreased, and the electrical properties changed as following: both $k_P$ and $Q_m$ reached the peak values at $Mn/(Mg+Mn)\cong0.3l7$ and gradually decreased; $\varepsilon33^T$ showed a monotonic decrease; P-E hysteresis loop gradually changed to asymmetrical one, and $E_i$ increased in correspondence. With increasing Zr/Ti ratio for a fixed Mn/(Mg+Mn) ratio of 0.317, on the contrary, the cell parameter $(\alpha^2c)^{1/3}$ gradually increased, and tetragonal-rhombohedral morphotropic phase boundary appeared in the range of $51/49{\leq}Zr/Ti{\leq}54/46$. the meantime, the grain size substantially increased, and the electrical properties changed as following: $k_P$ and $\varepsilon33^T$ reached peak values at Zr/Ti=51/49 and 48/52, respectively, and then gradually decreased; change of $Q_m$ was adverse to $k_P$; both $E_C\;and\;E_i$ considerably decreased while $P_S$ moderately increased. For the system 0.125(PMN+PM'N)-0.875PZT studied, the composition Mn/(Mg+Mn)=0.3l7 and Zr/Ti=51/49 revealed some promising electrical properties for piezoelectric transformer application such as $k_P=0.58,\;Q_m\cong1000$, and $\varepsilon^T_{33}=970$, as well as dense and fine-grained microstructure.