• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.100.2-100.2
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• 2012

Surface texturing of crystalline silicon is carried out in alkaline solutions for anisotropic etching that leads to random pyramids of about $10{\mu}m$ in size. Recently textured pyramids size gradually reduced using new solution. In this paper, we investigated that texture pyramids size had an impact on emitter property and front electrode (Ag) contact. To make small (${\sim}3{\mu}m$) and large (${\sim}10{\mu}m$) pyramids size, texturing times control and one side texturing using a silicon nitride film were carried out. Then formation and quality of POCl3-diffused n+ emitter in furnace compare with small and large pyramids by using SEM images, simulation (SILVACO, Athena module) and emitter saturation current density (J0e). After metallization, Ag contact resistance was measured by transfer length method (TLM) pattern. And surface distributions of Ag crystallites were observed by SEM images. Also, performance of cell which is fabricated by screen-printed solar cells is compared by light I-V.

• Solar Energy
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• v.19 no.3
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1738-1740
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2735-2738
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• 2011

To obtain the Si solar cells, the Si-wafers were textured by using the IPA+DI water mixed solution with KOH acids during the various 1~40 minutes at the temperature with $80^{\circ}C$, respectively. The samples were analyzed by the scanning electron microscopy for the surface images and the solar simulation for I-V measurement system. It was researched the correlation between the efficiency of solar cells and the effect of texturing. From the results of the surface images obtained by SEM, the efficiency was increased at the sample textured uniformly, and the efficiency of over etched-samples decreased.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.101-104
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• 2011

Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.300-300
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• 2010

후면 패시베이션, back contact의 가변, 후면 접촉면적의 가변 등으로 Laser Fired Contact 태양전지의 효율을 증가 시킬 수 있다. 이 중 spacing의 가변으로 후면 접촉 면적을 가변 할 수 있으며, 이로 인하여 LFC 태양 전지의 효율을 높일 수 있을 것으로 전망된다. 본 연구에서는 후면 접촉 면적을 가변하였으며 이에 따른 효과를 확인하였다. series resistance가 작고, open circuit voltage 가 높은 최적의 조건을 찾는 것에 그 목적을 두었다. 실험 순서는 texturing 후, 후면에 SiNx를 10nm 증착하였으며, drive-in 방법으로 $POCl_3$을 도핑하였다. ARC후, spacing 조건 가변으로 접촉 면적을 가변시키면서 소자의 특성 변화를 비교하였다. 접촉 면적 및 spacing 조건은 5개의 set에 대하여 reference, 50%의 접촉 면적을 가지는 $150{\mu}m$ line, 10%의 접촉 면적을 가지는 $700{\mu}m$ line, 1%의 접촉 면적을 가지는 $700{\mu}m$ dot, 그리고 0.2%의 접촉 면적을 가지는 $1500{\mu}m$ dot으로 하였다. 각각의 경우에 대한 short circuit current density, fill factor, seris resistance, sheet resistance, open circuit voltage를 측정하였으며, 특히 series resistance는 각각의 경우에 대하여 $6.1m{\Omega}$, $5.1m{\Omega}$, $7.8m{\Omega}$, $10.1m{\Omega}$, 그리고 $15.7m{\Omega}$으로 측정되었다. wafer의 외각 테두리를 접촉 면적이 증가함에 따라서 sheet resistance가 증가하는 것을 확인 할 수 있었다.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.73.1-73.1
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• 2010

태양광 시장은 세계적인 금융 위기 속에서도 점점 그 규모가 확대되고 있다. 시장의 규모가 확대되고 있음에도 불구하고 금융 위기를 겪으면서 생산자 중심의 시장에서 수요자 중심의 시장으로 바뀌게 되었다. 이에 따라 더 적은 비용으로 높은 출력의 제품만이 경쟁력을 가지게 됨으로써 효율이 더욱 이슈화되었다. 여러 태양전지 중 가장 점유율이 높은 결정질 태양전지는 일반적인 양산 공정만으로 효율을 높이는데 한계가 있으므로 selective emitter, back contact, light induced plating 등의 새로운 공정을 도입하여 효율을 높이려는 경향이 나타나고 있다. 본 연구에서는, ALD 장치를 사용하여 결정질 태양전지의 후면을 passivation 함으로써 효율을 높이는 방법을 모색하였다. 부동화 층으로는 $Al_2O_3$를 사용하였으며 셀을 제조하여 평가하였다. 실험방법은 p-type의 웨이퍼를 이용하여 습식으로 texturing 후 $POCl_3$ 용액으로 p-n junction을 형성하였고 anti-reflection 막인 SiNx는 PECVD를 사용하여 R.I 2.05, 80nm 두께로 증착하였다. 그런 다음 후면의 n+ layer를 제거하기 위하여 SiNx에 영향을 미치지 않는 용액을 사용하여 후면을 식각하였다. BSF 층은 screen printer로 Al paste를 printing하여 형성하였고 Al etching용액으로 여분의 Al제거한 후 ALD 장치를 이용하여 $Al_2O_3$를 증착하였다. 마지막으로 전극을 형성한 후 laser로 isolation하여 효율을 평가하였다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.6
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• pp.95-99
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• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.