• 센서학회지
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• 제17권3호
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• 한국결정성장학회지
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• 제9권3호
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• pp.280-285
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• 1999

화학기상증착법 (CVD) 으로 $\alpha$-Fe$_2$O$_3$ 박막가스센서를 제조하여 NO가스에 대한 검지감도 특성을 조사하였다. 150~$250^{\circ}C$로 증착온도를 변화시키면서 $\alpha$-Fe$_2$O$_3$ 박막을 증착하였을 때 $175^{\circ}C$와 20$0^{\circ}C$에서 증착한 박막은 $\alpha$-Fe$_2$O$_3$상이 나타났으나 $250^{\circ}C$에서 증착한 시편에서는 ${\gamma}$-Fe$_2$O$_3$상이 나타났다. X-선 회절분석으로 증착 및 열처리 조건에 따른 결정립의 크기변화를 조사한 결과 증착온도가 증가하거나 열처리시에 결정리이 성장함을 알 수 있었다. 가스검지감도 측정결과 175$^{\circ}C$에서 증착한 시편의 감도가 가장 좋은 것으로 나타났고, 이때 NO 가스 250ppm에 대한 검지감도는 3.2, 100ppm일때의 응답시간은 12초였다.

• 한국재료학회지
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• 제23권4호
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• pp.211-214
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• 2013

The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for $CH_4$ and $CH_3CH_2CH_3$ gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with $NH_4OH$. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to $CH_4$ gas and $CH_3CH_2CH_3$ gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

• 한국재료학회지
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• 제18권11호
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• pp.628-633
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• 2008

ZnO nanopowders were synthesized by the sol-gel method using hydrazine reduction, and their gas responses to 6 gases (200 ppm of $C_2H_5OH$, $CH_3COCH_3$, $H_2$, $C_3H_8$, 100 ppm of CO, and 5 ppm of $NO_2$) were measured at $300\;{\sim}\;400^{\circ}C$. The prepared ZnO nanopowders showed high gas responses to $C_2H_5OH$ and $CH_3COCH_3$ at $400^{\circ}C$. The sensing materials prepared at the compositions of [$ZnCl_2$]:[$N_2H_4$]:[NaOH] = 1:1:1 and 1:2:2 showed particularly high gas responses ($S\;=\;R_a/R_g,\;R_a$ : resistance in air, $R_g$ : resistance in gas) to 200 ppm of $C_2H_5OH$($S\;=\;102.8{\sim}160.7$) and 200 ppm of $CH_3COCH_3$($S\;= 72.6{\sim}166.2$), while they showed low gas responses to $H_2$, $C_3H_8$, CO, and $NO_2$. The reason for high sensitivity to these 2 gases was discussed in relation to the reaction mechanism, oxidation state, surface area, and particle morphology of the sensing materials.

• 센서학회지
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• 제6권3호
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• pp.180-187
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• 1997

We demonstrate the improvement of sensitivity and analysis of operating characteristics of the piezoelectric pressure sensor using ZnO piezoelectric thin film and FET(field effect transistor) for sensing applied pressure and transforming the pressure into electrical signals, respectively. The sensitivity of the PSFET(pressure sensitive field effect transistor) was improved by using highly-oriented ZnO film perpendicular to the substrate surface and the operating characteristics was investigated by monitoring output voltage with time in various static pressure levels.

• 한국세라믹학회지
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• 제25권4호
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• pp.341-348
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• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.

• Journal of Advanced Marine Engineering and Technology
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• 제26권1호
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• pp.125-131
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• 2002

This paper was studied on the effect of temperature on corrosion of absorption refrigeration systems using $LiBr-H_2O$ working fluids. In the fresh water and 62 % lithium bromide solution at $70^{\circ}C$, polarization test of SS 400, Cu(C1220T-OL) and Al-Ni bronze was carried out. And polarization behavior, polarization resistance characteristics, corrosion rate(mmpy) and corrosion sensitivity of materials forming absorption refrigeration systems was considered. The main results are as following: (1) As the experimental temperature increase, the change of corrosion rate of Al-Ni bronze become duller than SS 400 and Cu in 62% lithium bromide solution. (2) According as corrosion environment is changed from fresh water to 62% lithium bromide solution, potential change of Cu and Al-Ni bronze become less noble than SS 400. (3) The corrosion sensitivity of Al-Ni bronze was duller than that of Cu and SS 400 in 62% LiBr solution.

• 센서학회지
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• 제16권6호
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• pp.428-433
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• 2007

$SnO_{2}$-based thick film ethanol gas sensors were fabricated on alumina substrates and their ethanol gas sensing characteristics were investigated. The film sintered at $400^{\circ}C$ for 2 hrs. showed the highest sensitivity to ethanol gas and the sensitivity of the film to 1000 ppm ethanol gas in air was 97 % at an operating temperature of $250^{\circ}C$. The addition of $Fe_{2}O_{3}$ to $SnO_{2}$ enhanced the sensitivity by changing the type and number of surface acidic/basic sites.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.477-480
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• 1987

${\gamma}-Fe_2O_3$ thick film city gas sensors have been fabricated by using screen printing method. The sensitivity to $C_4H_{10}$ and, $CH_4$ was about 90% and 65% respectively. The devices heated in air at $400^{\circ}C$ for 1 hour exhibited the highest sensitivity (-90%) to $C_4H_{10}$ at the operating temperature of $300-350^{\circ}C$. And they had good selectivity for $C_4H_{10}$ in comparistion with other gases (CO, $H_2$, $C_3H_8$ etc).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.