• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.5
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• pp.45-51
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• 2007

This study was carried out to investigate various heavy metal contents in packaging papers by pre-treatments for ICP-ES (Inductively Coupled Plasma Emission Spectrometry) analysis. Pre-treatment methods of heavy metals in this study include extraction, migration and decomposition methods (dry ashing, $HNO_3-HClO_4-HF,\;HNO_3,\;and\;H_2SO_4-HNO_3$). Test results were compared with conventional extraction (water) and migration (3% acetic acid) methods. The five representative heavy metals (Cd, As, Pb, Cr and Hg) were analyzed. For Cd, Hg, and As, the results were below detection limit of the instrumental technique. It was considered that the migration test was a better method compared to extraction test, but all the decomposition methods showed much higher detection values than the extraction or migration test. In case of recycled corrugated containers, 3% acetic acid solution extracted about 25% of chromium and 30% of lead compared to the content by decomposition methods. Among all decomposition methods, the nitric acid - perchloric acid - hydrofluoric acid treatment brought a slightly higher detection value than others, but there was no significant difference among them except sulfuric acid - nitric acid method.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.06b
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• pp.465-469
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• 2006

Pre-treatment methods to determine various heavy metal contents in packaging papers were investigated by ICP-ES (Inductively Coupled Plasma Emission Spectrometry) analysis. Pre-treatment methods utilized in this study include dry ashing and decomposition methods ($HNO_{3-}HClO_{4-}HF,\;HNO_{3},\;and\;H_{2}SO_{4-}HNO_{3}$). They were compared with the conventional extraction (water) and migration (3% acetic acid) methods. The five representative heavy metals (Cd, As, Pb, Cr and Hg) were analyzed. For Cd, Hg, and As, the results were below detection limit of the instrument. In case of Cr and Pb, the migration test is considered to be a better method compared to the extraction test, but all pretreated methods showed much higher detection efficiency than the extraction or migration test. However, the detection ratio between the migration test and decomposition methods was different. Among all decomposition methods, the nitric acid - perchloric acid - hydrofluoric acid treatment brought a slightly higher detection value than others, but there was no significant difference among them except sulfuric acid - nitric acid method. Concerning Pb, the sulfuric acid - nitric acid method showed a low detection efficiency compared to other decomposition methods. The sulfuric acid - nitric acid method is, thus, not considered to be a suitable analysis method for Pb in packaging papers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.237.1-237.1
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• 2014

Etching is one of the most important steps in semiconductor manufacturing. In etch process control a critical task is to stop the etch process when the layer to be etched has been removed. If the etch process is allowed to continue beyond this time, the material gets over-etched and the lower layer is partially removed. On the other hand if the etch process is stopped too early, part of the layer to be etched still remains, called under-etched. Endpoint detection (EPD) is used to detect the most accurate time to stop the etch process in order to avoid over or under etch. The goal of this research is to develop a hardware and software system for EPD. The hardware consists of an Optical Plasma Monitor (OPM) sensor which is used to continuously monitor the plasma optical emission intensity during the etch process. The OPM software was developed to acquire and analyze the data to perform EPD. Our EPD algorithm is based on the following theory. As the etch process starts the plasma generated in the vacuum is added with the by-products from the etch reactions on the layer being etched. As the endpoint reaches and the layer gets completely removed the plasma constituents change gradually changing the optical intensity of the plasma. Although the change in optical intensity is not apparent, the difference in the plasma constituents when the endpoint has reached leaves a unique signature in the data gathered. Though not detectable in time domain, this signature could be obscured in the frequency spectrum of the data. By filtering and analysis of the changes in the frequency spectrum before and after the endpoint we could extract this signature. In order to do that, first, the EPD algorithm converts the time series signal into frequency domain. Next the noise in the frequency spectrum is removed to look for the useful frequency constituents of the data. Once these useful frequencies have been selected, they are monitored continuously in time and using a sub-algorithm the endpoint is detected when significant changes are observed in those signals. The experiment consisted of three kinds of etch processes; ashing, SiO2 on Si etch and metal on Si etch to develop and evaluate the EPD system.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.49-53
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• 2008

Magnetic and crystallographic properties of patterned media fabricated by nanoimprint lithography and Co-Pt electroplating were studied. Thin films of Ru(20 nm)/Ta(5 nm)/$SiO_2$(100 nm) were deposited on Si(100) wafer and then 25 nm hole pattern was fabricated by nanoimprint lithography on substrate. The electroplated Co-Pt nano-dots have the diameter of 35 nm and the height of 27 nm. Magnetic dot patterns of Co-Pt alloy were created using electroplated Co-Pt alloy and then their properties were measured by MFM, SQUID, SEM, TEM and AFM. We observed single domain with perendicular anisotropy for each dot and achieved optimum coercivity of 2900 Oe. These results mean that patterned media fabricated by nanoimprint lithography and electroplating have good properties in view of extending superparamagnetic limit while satisfying the writability requirements with the present write heads.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Korean Journal of Food Science and Technology
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• v.43 no.5
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• pp.525-531
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• 2011

This study was conducted to examine the contents of lead (Pb), cadmium (Cd), arsenic (As), and mercury (Hg) in meat and meat products in Korea. The contents of Pb, Cd, As, and Hg in 466 samples of beef, pork, chicken, duck, ham, and sausage were measured using inductively coupled plasma mass spectrometry or a mercury analyzer. Wet ashing and microwave method were compared, and the recovery and reproducibility of the microwave method were better than those of wet ashing for meat and meat products. The recovery of the microwave method was 98.1% for Pb, 104.6% for Cd, and 103.4% for As, respectively. The best result was obtained through digestion using an acid mixture ($HNO_3$/$H_2O_2$, 6:2). Hg content was measured using a mercury analyzer. As a result, the contents of Hg and Cd in samples were lower than those of Pb and As. The average contents of Pb were 0.009 mg/kg in beef, 0.010 mg/kg in pork, 0.006 mg/kg in chicken, 0.007 mg/kg in duck, 0.005 mg/kg in ham, and 0.009 mg/kg in sausage. The average Cd contents were 0.0004 mg/kg in beef, 0.0004 mg/kg in pork, 0.0005 mg/kg in chicken, 0.0012 mg/kg in duck, 0.0015 mg/kg in ham, and 0.0019 mg/kg in sausage. The average As contents were 0.016 mg/kg in beef, 0.004 mg/kg in pork, 0.021 mg/kg in chicken, 0.010 mg/kg in duck, 0.014 mg/kg in ham, and 0.018 mg/kg in sausage. The average Hg contents were 0.713 ${\mu}g/kg$ in beef, 0.902 ${\mu}g/kg$ in pork, 0.710 ${\mu}g/kg$ in chicken, 0.796 ${\mu}g/kg$ in duck, 1.141 ${\mu}g/kg$ in ham, and 1.052 ${\mu}g/kg$ in sausage. Based on the results of the National Health and Nutrition Survey 2005, the levels of dietary exposure to heavy metal contaminants in meat and meat products were compared with the provisional tolerable weekly intake(PTWI) established by the Joint FAO/WHO Expert Committee on Food Additives. The average dietary exposure of the general population from meat and meat products was 0.03-0.2% of PTWI for Pb, Cd, As, and Hg, which indicates a safe level for public health at present.