• 한국표면공학회지
• /
• 제29권5호
• /
• pp.357-362
• /
• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• 한국진공학회지
• /
• 제19권1호
• /
• pp.22-27
• /
• 2010

$TiO_2$의 표면의 친수성을 증가시키기 위하여 dielectric barrier discharge (DBD)에 의해 발생된 대기압 플라즈마 (atmospheric pressure plasma: APP)를 이용 RF power 50~200 W 범위에서 Ar과 $O_2$ 가스를 사용 대기압 플라즈마로 광촉매 표면을 개질하였다. Ar 가스 단독으로 처리한 시료의 접촉각은 20도에서 10도로 감소하였으며, $O_2$ 가스를 반응성 가스로 하여 처리한 경우에는 접촉각이 20도에서 1도 미만으로 감소하였다. 동일한 RF power에서 $O_2$ 플라즈마 처리 시 더 낮은 접촉각을 확인하였는데, 이는 $TiO_2$ 표면과 산소원자의 결합으로 인하여 표면의 polar force의 증가에 의한 것으로 판단되어 대기압 플라즈마로 처리된 시료의 X-ray photoelectron spectroscopy (XPS)의 스펙트럼 분석결과 OH 작용기의 증가로 표면의 친수성이 증가됨을 확인하였다. 대기압 플라즈마로 처리된 시료와 처리하지 않은 시료의 접촉각은 모두 시간이 지남에 따라 증가하지만 플라즈마 처리 된 시료의 접촉각 증가는 플라즈마 처리하지 않은 시료의 접촉각 보다 작은 것을 확인하였다. 또한, 페놀 분해 실험을 통하여 플라즈마 표면처리를 통하여 $TiO_2$ 광촉매의 분해 효율이 크게 향상되는 것을 확인하였다.

• Corrosion Science and Technology
• /
• 제2권4호
• /
• pp.189-193
• /
• 2003

The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.906-909
• /
• 2006

The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.96-96
• /
• 2010

To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol

• 센서학회지
• /
• 제31권4호
• /
• pp.214-217
• /
• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• 멤브레인
• /
• 제4권4호
• /
• pp.205-212
• /
• 1994

플라스마 고분자막을 통한 일반기체들(He, $H_2,\;CO_2,\;O_2,\;N_2,\;CH_4$등)의 투과특성을 조사하였으며 IR 분석을 통하여 플라즈마 고분자의 화학적 구조를 살펴 보았다. 플라즈마 고분자막은 불소를 함유한 방향족 화합물의 플라즈마 중합에 의하여 제조하였으며 이 막을 통한 기체투과실험은 $35^{\circ}C$, 1기압에서 행하였다. 이 막들의 투과계수는 투과기체의 분자 크기가 커질수록 감소하는 경향을 나타내었다. 플라즈마 고분자의 $O_2/N_2$ 선택투과도는 상용고분자보다 약간 낮았으나 $CO_2/CH_4$ 선택투과도는 상용고분자보다 매우 높은 것으로 나타났다. FT-IR 분석을 통하여 플라즈마 고분자는 방향족과 지방족 구조를 모두 포함한 구조를 이루고 있다는 것을 알 수 있었다.

• Korean Journal of Chemical Engineering
• /
• 제35권12호
• /
• pp.2474-2479
• /
• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Transactions on Electrical and Electronic Materials
• /
• 제11권3호
• /
• pp.116-119
• /
• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• 한국환경과학회지
• /
• 제22권12호
• /
• pp.1561-1569
• /
• 2013

This study carried out a laboratory scale plasma reactor about the characteristics of chemically oxidative species (${\cdot}OH$, $H_2O_2$ and $O_3$) produced in dielectric barrier discharge plasma. It was studied the influence of various parameters such as gas type, $1^{st}$ voltage, oxygen flow rate, electric conductivity and pH of solution for the generation of the oxidant. $H_2O_2$ and $O_3$.) $H_2O_2$ and $O_3$ was measured by direct assay using absorption spectrophotometry. OH radical was measured indirectly by measuring the degradation of the RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical). The experimental results showed that the effect of influent gases on RNO degradation was ranked in the following order: oxygen > air >> argon. The optimum $1^{st}$ voltage for RNO degradation were 90 V. As the increased of $1^{st}$ voltage, generated $H_2O_2$ and $O_3$ concentration were increased. The intensity of the UV light emitted from oxygen-plasma discharge was lower than that of the sun light. The generated hydrogen peroxide concentration and ozone concentration was not high. Therefore it is suggested that the main mechanism of oxidation of the oxygen-plasma process is OH radical. The conductivity of the solution did not affected the generation of oxidative species. The higher pH, the lower $H_2O_2$ and $O_3$ generation were observed. However, RNO degradation was not varied with the change of the solution pH.