• 전자공학회논문지 IE
• /
• v.46 no.3
• /
• pp.1-5
• /
• 2009

In this paper, we study the electrical characteristics of $RuO_2$/n-GaN Schottky diodes fabricated by using electrochemical metallization. The solution for GaN Schottky electrodes of $RuO_2$ is perchloric acid($HClO_4$). Thickness of $RuO_2$ layer depend on supplied voltage and dipping time. We verified the possibility of the rectifying and non-rectifying devices' electrode which was depend on the thickness of $RuO_2$ layer.

• Journal of the Korean Ceramic Society
• /
• v.27 no.6
• /
• pp.799-807
• /
• 1990

In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN＋10w/o SiO2(＋3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

• Korean Journal of Crystallography
• /
• v.15 no.1
• /
• pp.35-39
• /
• 2004

Two new nickel vanadium borophosphate cluster compounds, $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (1) and $(NH_4)_{3.5}(C_3H_{12}N_2)_{3.5}[Ni(H_2O)_6]_{1.25}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (2) have been synthesized and structurally characterized. Inter-diffusion methods were employed to prepare the compounds. The cluster anion $[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6$ is used as a building unit in the synthesis of new compounds containing $Ni(H_2O){^{2+}_5}$ in the presence of pyrazine and 1,3-diaminopropane. Compounds contain isolated cluster anions with general composition ${[Ni(H_2O)_5]_n[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6}^{-(17-2n)}$ (n = 2, 4). Crystal data: $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$, monoclinic, space group C2/m (no. 12), a = 27.538(2) ${\AA}$, b = 20.366(2) ${\AA}$, c = 11.9614(9) ${\AA}$, ${\beta}$ = 112.131(1)$^{\circ}$, Z = 8; $(NH_4)_{3.5}(C_3H_{12}N_2)_b[Ni(H_2O)_6]_{3.5}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$, triclinic, space group P-1 (no. 2), a = 17.7668(9) ${\AA}$, b = 17.881(1) ${\AA}$, c = 20.668(1) ${\AA}$, ${\alpha}$ = 86.729(1)$^{\circ}$, ${\beta}$ \ 65.77(1)$^{\circ}$, ${\gamma}$ = 80.388(1)$^{\circ}$, Z = 2.

• Journal of the Korean Chemical Society
• /
• v.17 no.3
• /
• pp.169-173
• /
• 1973

The tridentate schiff base ligand, salicyliden amino-o-hydroxy benzene, has derived from salicylaldehyde and o-amino phenol. This ligand reacts with a series of Mo (VI), Mo (V), Mo (IV), and Mo (III) oxidated states and forms a new complexes; [Mo O$_2(H_2O)\;(C_{13}H_9O_2N)]$, [MoO Cl$(H_2O)\;(C_{13}H_9O_2N)]$, [Mo(SCN)$_2(H_2O)\;(C_{13}H_9O2_N)]$ 및 $[Mo(H_2O)_2\;(C_{13}H_9O_2N)]_2O$. The Mo (VI), Mo(V) and Mo(Ⅳ) ions in these complexes are octahedron, hexa coordinate, and the mole ratio of these ions to the ligand are 1 : 1, but Mo (III) Complex is a Mo-O-Mo oxygen bridge bond and polynuclear, and the mole ratio of Mo (III) to the ligand 1 : 1 above facts are identified from the data of Infrared spectra, visible spectra, and elemental analysis.

• Journal of the Korean Ceramic Society
• /
• v.30 no.11
• /
• pp.941-948
• /
• 1993

The powder mixture of Si3N4-AlN-Y2O3, Si3N4-AlN-CeO2 and Si3N4-AlN-Y2O3-CeO2 system was hot-pressed at 175$0^{\circ}C$ for 2h in N2 to prepare $\alpha$-Sialon ceramics. The mechanical property and oxidation behaviour of the prepared $\alpha$-Sialon ceramics were investigated. At 120$0^{\circ}C$, oxidation resistance was best for the Y2O3 added $\alpha$-Sialon ceramics and oxidation rate increased when the amount of CeO2 increased. But when the mixture of Y2O3 and CeO2 added $\alpha$-Sialon ceramics showed a good oxidation resistance. Fracture toughness of (Y2O3＋CeO2) added $\alpha$-Sialon ceramics was higher than Y2O3 added $\alpha$-Sialon ceramics.

• Korean Journal of Soil Science and Fertilizer
• /
• v.44 no.6
• /
• pp.1207-1213
• /
• 2011

This study was conducted to assess $N_2O$ emissions in agricultural soils of Korea. According to 1996 and 2006 IPCC (Intergovernmental Panel on Climate Change) methodology, $N_2O$ emission was calculated the sum of direct emission ($N_2O_{DIRECT}$) and indirect emission ($N_2O_{INDIRECT}$). To calculate $N_2O$ emissions, emission factor was used default of IPCC and activity data was used the food, agricultural, forestry and fisheries statistical yearbook of MIFAFF (Ministry for Food, Agriculture, Forestry and Fisheries). It was emitted 8,608 $N_2O$ Mg resulted from direct emission by application of chemical fertilizer and animal manure, input in n-fixation crops and input of crop residues and emissions converted $N_2O$ into $CO_2$ equivalent was 2,668 $CO_2$-eq Gg. Indirect emission as $N_2O_{(G)}$ (atmospheric deposition of $NH_3$ and $NO_X$) and $N_2O_{(L)}$ (leaching and runoffs) were 4,567 and 6,013 $N_2O$ Mg and emissions converted $N_2O$ into $CO_2$ equivalent were 1,416 and 1,864 $CO_2$-eq Gg, respectively. Total $N_2O$ emission in Korea agricultural soil in 2009 was 5,948 $CO_2$-eq Gg.

• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.31-36
• /
• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• Journal of the Korean Chemical Society
• /
• v.22 no.5
• /
• pp.295-303
• /
• 1978

The dipole moments for octahedral [Co(III)-$O_3N_3$], tetrahedral [M(II)-$O_2N_2$] and square planar [M(II)-$O_2N_2$] types complexes are calculated by the expansion method for spherical harmonics using the valence basis sets for the central metal ion and the single basis set orbital ($2p_z$) for ligands. The calculated dipole moments for these complexes are in agreement with the experimental values.

• Electrical & Electronic Materials
• /
• v.7 no.1
• /
• pp.25-31
• /
• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Journal of the Korean Ceramic Society
• /
• v.32 no.5
• /
• pp.617-625
• /
• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.