• Bulletin of the Korean Chemical Society
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• v.26 no.9
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• pp.1354-1358
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• 2005

Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide ($In_2O_3$) powder and its pellet with ammonia in the temperature range 580-700 ${^{\circ}C}$. The degree of nitridation of $In_2O_3$ to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that $In_2O_3$ is nitridated to InN via two dominant parallel routes (solid ($In_2O_3$)-to-solid (InN) and gas ($In_2O$)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of $In_2O$ with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.19-24
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• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• Bulletin of the Korean Chemical Society
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• v.1 no.3
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• pp.75-78
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• 1980

The interactions of iodine with toluidines (o-, m-, and p-) and N-methyltoluidines (o-, m-, and p-) in $CCl_4$ solution have been investigated through spectrophotometric measurements. The results indicate that toluidines and N-methyltoluidines form the one-to-one charge-transfer complexes with $I_2$ in solution. By comparing the values of the formation constants of the complexes, it is concluded that the relative stabilities of the $I_2$-amine complexes decrease in the following orders: p-toluidine >m-toluidine >aniline >o-toluidine, N-methyl-p-toluidine >N-methyl-m-toluidine >N-methylaniline >N-methyl-o-toluidine, N-methyltoluidines >toluidines. These results can be explained by the electron-releasing character and the steric effect of methyl group in the amine molecules.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1223-1225
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• 1994

The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.

• Journal of Veterinary Science
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• v.25 no.2
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• pp.30.1-30.16
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• 2024

Background: Biofilms, such as those from Staphylococcus epidermidis, are generally insensitive to traditional antimicrobial agents, making it difficult to inhibit their formation. Although quercetin has excellent antibiofilm effects, its clinical applications are limited by the lack of sustained and targeted release at the site of S. epidermidis infection. Objectives: Polyethylene glycol-quercetin nanoparticles (PQ-NPs)-loaded gelatin-N,O-carboxymethyl chitosan (N,O-CMCS) composite nanogels were prepared and assessed for the on-demand release potential for reducing S. epidermidis biofilm formation. Methods: The formation mechanism, physicochemical characterization, and antibiofilm activity of PQ-nanogels against S. epidermidis were studied. Results: Physicochemical characterization confirmed that PQ-nanogels had been prepared by the electrostatic interactions between gelatin and N,O-CMCS with sodium tripolyphosphate. The PQ-nanogels exhibited obvious pH and gelatinase-responsive to achieve on-demand release in the micro-environment (pH 5.5 and gelatinase) of S. epidermidis. In addition, PQ-nanogels had excellent antibiofilm activity, and the potential antibiofilm mechanism may enhance its antibiofilm activity by reducing its relative biofilm formation, surface hydrophobicity, exopolysaccharides production, and eDNA production. Conclusions: This study will guide the development of the dual responsiveness (pH and gelatinase) of nanogels to achieve on-demand release for reducing S. epidermidis biofilm formation.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.942-948
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• 1992

Ultrafine iron oxide powder, {{{{ gamma }}-Fe2O3 and $\alpha$-Fe2O3, were prepared by the thermal decomposition of organometallic compounds. The formation process of powder includes the thermal decomposition and oxidation of the organometallic precursors, Fe(N2H3COO)2(N2H4)2 (A) and N2H5Fe(N2H3COO)3.H2O (B). The organometallic precursors, A and B, were synthesized by the reaction of ferrous ion with hydrazinocarboxylic acid, and characterized by quantitative analysis and infrared spectroscopy. The mechanistic study for the thermal decomposition was performed by DAT-TG. The iron oxide powder was obtained by the heat treatment of the precursors at 20$0^{\circ}C$ and $600^{\circ}C$ for half an hour in air. The phases of the resulting product were proved {{{{ gamma }}-Fe2O3 and $\alpha$-Fe2O3 respectively. The particle shape was equiaxial and the particle size was less than 0.1 ${\mu}{\textrm}{m}$. Magnetic properties of the {{{{ gamma }}-Fe2O3 powder obtained from A and B was 234 Oe of coercivity, 64.26 emu/g of saturation magnetization, 23.59 emu/g of remanent magnetization and 24.1 Oe, 47.27 emu/g, 3.118 emu/g respectively. The value of $\alpha$-Fe2O3 powder was 1.494 Oe, 0.4862 emu/g, 0.1832 emu/g and 1,276 Oe, 0.4854 emu/g, 0.1856 emu/g respectively.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.582-587
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• 2006

Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.