• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.11-14
• /
• 2003

[ $HfO_2$ ] thin films were deposited at $300^{\circ}C$ on p-type Si (100) substrates using $HfO_2(HfO_xN_y)$ as the precursor by plasma-enhanced chemical vapor deposition and were annealed at $300^{\circ}C$ in nitrogen plasma ambient. Compared with $HfO_2$, nitrogen plasma annealed $HfO_2$ show good chemical stability, higher crystallization temperature, lower leakage current and thermal stability. Leakage current density of nitrogen plasma annealed $HfO_2$ is approximately one order of magnitude lower than that of $HfO_2$ for the same EOT. The improvement in electrical characteristics of nitrogen plasma annealed $HfO_2$ can be explained by the better thermal stability due to nitrogen incorporation.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.05a
• /
• pp.54-54
• /
• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• The Korean Journal of Food And Nutrition
• /
• v.8 no.2
• /
• pp.59-69
• /
• 1995

This study designed to compare the hypolipidemic e(feats of n6 linoleic acid (LA), n3 w-linolenic acid(LL) and n3 eicosapentaenoic acid(EPA) and docosahexaenoic acid(DHA) In rats fed high fat (40% Cal) diet. Male Sprague-Dawley rats fed experimental diets for 6 weeks, which were different only in fatty acid composition. The dietary fats were beef tallow (BT) as a source of saturated fatty acid (SFA), corn oil(CO) for n6 LA, perilla oil (PO) for n3 a-LL and fish oil (FO) for n3 EPA+DHA. Plasma total cholesterol (T-chol) level was increased by n6 LA but decreased by n3 LL and n3 EPA+DHA and most effectively reduced by n3 EPA+DHA. Plasma triglyceride(TG ) level was reduced by n6 LA, but lipogenesis in liver was not affected by n6 LA. However, plasma TG level was lowered by n3 LL and EPA+DHA. Both lipogenic enzyme activity and liver TG level were also decreased by n3 PUFA. PO and FO groups were significantly higher in the relative Proportions of C20:5 and C22:6 of plasma and liver and lower in those of C20:4/C20:5 ratio. Overall, the lipid-lowering effect was in the order of n3 EPA+DHA >n3 LL > n6 LA and fish oil and perilla oil rich in n3 PUFA may have important nutritional applications in the prevention and treatment of hyperlipidemia.

• ETRI Journal
• /
• v.34 no.2
• /
• pp.226-234
• /
• 2012

The novelty of this study resides in the fabrication of stoichiometric and stress-reduced $Si_3N_4/SiO_2/Si_3N_4$ triple-layer membrane sieves. The membrane sieves were designed to be very flat and thin, mechanically stress-reduced, and stable in their electrical and chemical properties. All insulating materials are deposited stoichiometrically by a low-pressure chemical vapor deposition system. The membranes with a thickness of 0.4 ${\mu}m$ have pores with a diameter of about 1 ${\mu}m$. The device is fabricated on a 6" silicon wafer with the semiconductor processes. We utilized the membrane sieves for plasma separations from human whole blood. To enhance the separation ability of blood plasma, an agarose gel matrix was attached to the membrane sieves. We could separate about 1 ${\mu}L$ of blood plasma from 5 ${\mu}L$ of human whole blood. Our device can be used in the cell-based biosensors or analysis systems in analytical chemistry.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.2
• /
• pp.67-71
• /
• 2020

For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.489-489
• /
• 2012

The vibrational distribution of $N_2$ (B, v') in after-glows in $N_2$ RF flowing plasma was investigated. The optical emission of the after-glow was studied as function of distance from plasma. In a tube 2.1 cm, the gas pressure varied 8 Torr with 1000sccm nitrogen gas flowing late.. The discharges were excited by two ring-electrode powered by RF 13.56 MHz 100 Watt. $N_2$ (B, v') vibrational distribution was analyzed to see depends of position in after-glow. Dissociation rate of $N_2$ varied showing maximum in the late after-glow region. We studied $N_2$ RF capacitive flowing plasmas and afterglows by emission spectroscopy and by NO titration to determine the density of N-atoms.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.1
• /
• pp.44-47
• /
• 2009

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. $SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method. which are ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_6-N_2$ mixture gases.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.62-62
• /
• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Asian-Australasian Journal of Animal Sciences
• /
• v.24 no.10
• /
• pp.1393-1398
• /
• 2011

Four 4-month old Charolais${\times}$Dorset male sheep (initial liveweight $25.0{\pm}1.1\;kg$), fitted with rumen and abomasal fistulas and nourished by total intragastric infusions, were used to study the relationships between methionine (Met) supply, nitrogen (N) retention and plasma insulin-like growth factor-I (IGF-I). Four graded levels of Met, i.e. 0 g/16 g N, 1.76 g/16 g N, 3.52 g/16 g N and 7.04 g/16 g N, were infused into abomasums as experimental treatments. The sheep and treatments were allocated in a $4{\times}3$ incomplete Latin square design (Yudon square design). The experiment lasted 3 periods and each period was 10 days. Quadratic correlations were found between Met level (x, g/16 g N) and N retention (y, g/d): y = $-0.03x^2$+0.41x+2.62, $r^2$ = 0.66, n = 12, p = 0.008, and between methionine level (x, g/16 g N) and plasma IGF-I concentration (y, ng/ml): y = $0.80x^2$-4.53x+190.24, $r^2$ = 0.51, n = 12, p = 0.009. No significant correlation was found between plasma IGF-I (x, ng/ml) and N retention (y, g/d) (p>0.05). It was concluded that Met level had a significant influence on N retention and plasma IGF-I concentration whereas IGF-I might not be an important mediator in the regulation of N metabolism by Met in growing sheep nourished by total intragastric infusions.

• Dementia and Neurocognitive Disorders
• /
• v.21 no.2
• /
• pp.59-70
• /
• 2022

Background and Purpose: Neurofilament light chain (NfL) has been considered as a biomarker for neurodegenerative diseases including Alzheimer's disease (AD). We measured plasma NfL levels in older adults with cognitive complaints and evaluated their clinical usefulness in AD. Methods: Plasma levels of NfL, measured by using the single molecule array method, were acquired in a total of 113 subjects consisting of subjective cognitive decline (SCD; n=14), mild cognitive impairment (MCI; n=37), or dementia of Alzheimer type (DAT; n=62). Plasma NfL level was compared among three groups, and its association with cognitive and functional status was also analyzed. Results: After adjusting for age, plasma NfL level was higher in subjects with DAT (65.98±84.96 pg/mL), compared to in subjects with SCD (16.90±2.54 pg/mL) or MCI (25.53±10.42 pg/mL, p=0.004). NfL levels were correlated with scores of the mini-mental state examination (r=-0.242, p=0.021), clinical dementia rating (CDR) (r=0.291, p=0.005), or CDR-sum of boxes (r=0.276, p=0.008). Just for participants who performed amyloid positron emission tomography (PET), the levels were different between subjects with PET (-) (n=17, 25.95±13.25 pg/mL) and PET (+) (n=16, 63.65±81.90 pg/mL, p=0.010). Additionally, plasma NfL levels were different between vascular dementia and vascular MCI, and between Parkinson's disease- dementia and no dementia. Conclusions: This pilot study shows that in subjects with DAT, plasma NfL levels increase. Plasma NfL level correlated with cognitive and functional status. Further longitudinal studies may help to apply the plasma NfL levels to AD, as a potential biomarker for the diagnosis and predicting progression.