• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• 한국재료학회지
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• 제13권5호
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• pp.338-342
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• 2003

Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.

• 열처리공학회지
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• 제23권5호
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• pp.269-276
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• 2010

This study has been carried out to the low temperature plasma nitriding treatment on the mechanical properties of stainless steel at temperature range between $400^{\circ}C$ and $500^{\circ}C$. It was found that there was precipitated to free CrN matrix below $400^{\circ}C$ and there was precipitated S-phase of STS 316L, ${\varepsilon}$-phase of STS 409L and ${\alpha}N$-phase of STS 420J2. STS 316L has formed relatively abundant CrN phase and ${\gamma}^{\prime}-Fe_4N$ phase at $500^{\circ}C$, alternatively STS 409L and STS 420J2 were more deeply nitrided than STS 316L at $500^{\circ}C$.

• 한국표면공학회지
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• 제48권6호
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• pp.269-274
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• 2015

In this experiment, post-nitriding treatment was performed at $400^{\circ}C$ on AISI 316 stainless steel which was plasma carburized previously at $430^{\circ}C$ for 15 hours. Plasma nitriding was implemented on AISI 316 stainless steel at various gas compositions (25% $N_2$, 50% $N_2$ and 75% $N_2$) for 4 hours. Additionally, during post nitriding Ar gas was used with $H_2$ and $N_2$ to observe the improvement of surface properties. After treatment, the behavior of the hybrid layer was investigated by optical microscopy, X-ray diffraction, and micro-hardness testing. Potentiodynamic polarization test was also used to evaluate the corrosion resistance of the samples. Meanwhile, it was found that the surface hardness increased with increasing the nitrogen gas content. Also small percentage of Ar gas was introduced in the post nitriding process which improved the hardness of the hardened layer but reduced the corrosion resistance compared with the carburized sample. The experiment revealed that AISI 316L stainless steel showed better hardness and excellent corrosion resistance compared with the carburized sample, when 75% $N_2$ gas was used during the post nitriding treatment. Also addition of Ar gas during post nitriding treatment degraded the corrosion resistance of the sample compared with the carburized sample.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.253.1-253.1
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• 2014

Plasma technology has been widely used for decontamination, differentiation, and disease treatment. Recently, studies show that plasma has effects on increasing seed germination and plant growth. In spite of increasing number of studies about plasma effects, the interaction between plasma and plants has been rarely informed. In this study, we have analyzed the effects of nonthermal atmospheric pressure plasma on seed germination and growth of coriander (Coriandum sativum), a medicinal plant. We used to Ar, air, and N2 plasma on seed as feeding gases. Plasma was discharged at 0.62 kV, 200 mA, 9.2 W. Seed germination was increased over time when treated with N2 based DBD plasma for exposure times of 30 seconds and 1 minute, everyday. After 7 days, about 80~100% of seeds were germinated in the treatment with N2 based DBD plasma, compared to control (about 40%, only gas treated seeds). In order to elucidate the mechanism of increased germination, we have analyzed characteristics of changes in plant hormones and seed surface structure by SEM.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• KSTLE International Journal
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• 제6권2호
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• pp.45-50
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• 2005

Plasma ceramic spray that is applied on a machine part under severe work conditions has been investigated for tribological behavior. The application of ceramic coatings by plasma spray has become essential in tribosystems to produce wear resistance and long life in severe conditions. The purpose of this study was to investigate the wear characteristics of $8\%Y_{2}O_3-ZrO_2$ coating, in view of the effect of post-spay heat treatment. The plasma-sprayed $8\%Y_{2}O_3-ZrO_2$ coating was studied to know the relationship between phase transformations and wear behavior related to post-spray heat treatment. Wear test was carried out with ball on disk type on normal loads of 50N,70N and 90N under room temperature. The phase transformation of phase and the value of residual stress were measured by X-ray diffraction method(XRD). Tribological characteristics and wear mechanisms of coatings were observed by SEM. The tribological wear performance was discussed in the focusing of residual stress. Consequently, post-spray heat treatment plays an important role in decreasing residual stress. Residual stress in the coating system has a significant influence on the wear mechanism of coating.

• Bulletin of the Korean Chemical Society
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• 제33권1호
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• pp.199-203
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• 2012

A modified sol-gel method and $N_2$-plasma treatment were used to prepare bulk and surface doped N-$TiO_2$, respectively. XRD, TEM, UV-vis spectroscopy, $N_2$ adsorption, Elemental Analyzer, Photoluminescence, and XP spectra were used to characterize the prepared $TiO_2$ samples. The N doping did not change the phase composition and particle sizes of $TiO_2$ samples, but increased the visible light absorption. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activity of surface doped N-$TiO_2$ prepared by $N_2$-plasma was much higher than that of bulk doped N-$TiO_2$ prepared by sol-gel method. The possible mechanism for the photocatalysis was proposed.

• 한국재료학회지
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• 제27권12호
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• Current Photovoltaic Research
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• 제3권4호
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• pp.112-115
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• 2015

In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.