• Corrosion Science and Technology
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• 제20권4호
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• pp.196-203
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• 2021

To improve corrosion resistance and reduce the hydrogen uptake of 22MnB5, up to 5% Mg was added to the AlSi coating of 22MnB5. After hot-stamping and electrocoating were done on the metallic-coated specimen, the surface characteristics of the steel, hydrogen uptake content, and corrosion resistance were examined by transmittance electron microscopy, thermal desorption spectrometry, cyclic corrosion testing, and electrochemical impedance spectroscopy. Mg was investigated as MgO on the surface layer after hot-stamping while it existed as Mg₂Si before hot-stamping. The total hydrogen content of 22MnB5 was decreased along with the Mg content. However, there was no difference at 0.2 wt% or more. When a small amount of Mg was added, the coating corrosion resistance was decreased, but when it was added at around 1.0 wt%, the greatest corrosion resistance increase was seen. However, when 3 wt% or more was added excessively, the corrosion resistance was decreased. MgO on the surface was considered to suppress H uptake by the AlSi melting solution and increase the barrier effect of the coating.

• 대한의용생체공학회:의공학회지
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• 제15권2호
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• pp.189-194
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• 1994

Effects of ${AI_2O_3}/{P_2O_5}$ ratio on the crystallization of a series of glasses with the nominal composition of 41.4wt % $SiO_2$, 35.0wt % CaO, 20.6wt % (${P_2O_5}$+${AI_2O_3}$) and 3.0wt% MgO were investigated with DTA, XRD and SEM. The major crystalline phases are apatite and anorthite. The glass transition temperature ($T_g$) and the softening point ($T_s$) are shifted to the upper temperature by increasing $AI_2O_3$ content. The temperature of apatite crystallization ($T_{p1}$) is increased by $AI_2O_3$ content, but the tempera¬ture of anorthite crystallization ($T_{p2}$) is not affected significantly. With increased of $AI_2O_3$, the apatite crystallization is decreased, but anorthite crystallization is increased.

• 한국진공학회지
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• 제10권2호
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• pp.234-240
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• 2001

본 연구에서는 Mg을 첨가한 Cu-alloy에 의해 TiN의 확산방지능력을 향상시키고자 하였다. Cu(Mg) 박막은 대기노출시킨 TiN박막위에 증착되었으며 열처리시 Cu 박막내의 Mg은 TiN의 표면에 있는 산소와 반응하여 매우 얇은(~100 $\AA$) MgO를 형성하게되고 MgO에 의해 TiN의 확산방지능력은 Cu(4.5 at.%Mg)의 경우 $800^{\circ}C$까지 향상됨을 알 수 있었다. 그러나 Cu(Mg) a]toy는 TiN위에서 접착특성이 좋지 않기 때문에 TiN을 $O_2$plasma 처리하였으며 $O_2$ plasma 처리후 $300^{\circ}C$ 진공열처리를 통해 접착력이 크게 향상되는 것을 알 수 있었다. 이는 $O_2$ plasma 처리에 의해 TiN표면에 Mg과 반응할 수 있는 산소의 양이 증가하는 데 기인하며 이에 따라 Mg의 계면이동이 크게 증가되어 치밀한 MgO가 형성됨을 확인하였다. 그리고 $O_2$ plasma 처리시 RF power를 증가시키면 계면으로 이동하는 Mg의 양이 오히려 감소하였고 이것은 TiN의 표면이 $TiO_2$로 변하여 Mg과 결합할 수 있는 산소의 양이 상대적으로 감소하였기 때문인 것으로 생각된다. 또한 접착층으로서 Si을 50$\AA$ 증착하여 접착력을 크게 향상시켰으며 Si 증착에 의한 TiN의 확산방지능력은 감소되지 않는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제27권8호
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• pp.979-990
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• 1990

The possible use of bioglass as implant materials is due to its biocompatibility to human body. Even if many animal studies for the bioglasses have been performed, their structures and physical properties are not fully understood. In the present work, several investigations such as Raman spectroscopic analysis, density, thermal expansion coefficient, softening temperature, and refractive index measurement were carried out to find the structures and physical properties of bioglasses, where MgO is substituted for CaO in bioglass composition (46.1%SiO2, 24.4%Na2O, 26.9%CaO, 2.6%P2O5 ; mole%). Hydroxyapatite formation on the glass surface reacted in Tris-buffer solution was also examined. When CaO was replaced by MgO, nonbridging oxygen in glass structuer was diminished but the degree of disorder increased. Thermal expansion and softening properties showed the mixed oxide effect. Hydroxyapatite were formed on the surface of 0~11mole% of MgO containing bioglasses, and the thickness of SiO2-rich layer as well as hydroxyapatite layer were unchanged with MgO content. However, the hydroxyapatite was not formed on the surface of the bioglasses containing over 11 mole percent MgO, even if the glasses were reacted for long period.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.211-216
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• 1999

Four different $\beta-Si_3N_4$ ceramics with silicon oxynitrides $[Y_10(SiO_4)_6N_2, Yb_4Si_2N_2O_7, Er_2Si_3N_4O_3, \;and La_{10}(SiO_4)_6N_2$, respectivley] as secondary phases have been fabricated by hot-pressing the $Si_3N_4-Re_4Si_2N_2O_7$ (Re=Y, Yb, Er, and La) compositions at $1820^{\circ}C$ for 2h under a pressure of 25 MPa. The high temperature strength and oxidation behavior of the hot-pressed ceramics were characterized and compared with those of the ceramics fabricated from $Si_3N_4-Si_2O_7$ compositions. The $Si_3N_4-Re_4Si_2N_2O_7$composition investigated herein showed comparable high temperature strength to those from $Si_3N_4-Re_2Si_2O_7$ compositions. Si3N4 ceramics from a $Si_3N_4-Y_4Si_2N_2O_7$ composition showed the highest strength of 877 MPa at $1200^{\circ}C$ among the compositions. All $Si_3N_4$ ceramics investigated herein showed a parabolic weight gain with oxidation time at $1400^{\circ}C$ and the oxidation products of the ceramics were $SiO_2$ and $Re_2Si_2O_7$. The $Si_3N_4-Re_4Si_2N_2O_7$ compositions showed inferior oxidation resistance to those from $Si_3n_4-Re_2Si_2O_7$ compositions, owing to the incompatibility of the secondary crystalline phases of those ceramics with $SiO_2$, the oxidation product of Si3N4.Si3N4 ceramics from a $Si_3N_4-Er_4Si_2N_2O_7$ composition showed the best oxidation resistance of 0.375mg/$\textrm{cm}^2$ after oxidation at $1400^{\circ}C$ for 102 h in air among the compositions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.178-178
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• 2007

II-VI의 넓은 밴드갭 (3.37 eV)을 가지는 ZnO는 solar cells, transparent conductive electrodes, ultraviolet light emitters, and chemical sensors 등에 응용되고 있다. 특히 고효율 ZnO계 발광 소자 구현을 위하여 MgO (7.7eV), CdO (2.0eV) 등의 고용을 통한 밴드갭을 엔지니어링 하며, 단파장 영역의 광원을 확보하기 위하여 MgO 첨가를 통한 밴드갭 에너지를 증가시키는 방향으로의 연구가 활발하다. 그러나 ZnO의 wurtzite 구조와 MgO의 rocksalt 구조의 상이한 결정구조로 인하여 Mg의 고용한계는 4 at. %, 4.1 eV 알려져 있다. 본 실험에서는 p-type Si (100), c-sapphire (0002)과 GaN 기판 위에 MgO (99.999 %)와 ZnO (99.999 %) 두가지 타겟을 사용하여 RF co-스퍼터링법으로 ZnMgO 박막을 증착 하였다. 이때 ZnO 타겟의 power 밀도는 고정 시키고 MgO 타겟의 power 밀도를 변화 시키며 Mg의 함량을 조절하여 그에 따른 광학적 구조적 특성의 변화를 연구 하였다. 성장된 ZnMgO 박막은 MgO 타겟의 power 밀도가 증가할 때 Mg의 함량이 10 at. %까지 증가 하며, 그에 따른 표면의 거칠기 및 입계 크기가 감소하며, 박막의 성장속도 또한 감소함을 SEM과 AFM을 통하여 알 수 있었다. XRD를 동하여 ZnMgO 박막의 (0002) peak의 위치는 $34.50^{\circ}{\sim}34.7^{\circ}$로 오른쪽으로 이동하며, c-축으로 성장하였음을 알 수 있다. PL과 UV룰 동하여, Mg의 함량이 증가 할수록 박막의 밴드갭 에너지는 3.2 eV에서 4.1 eV 로 증가하였다.

• 대한금속재료학회지
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• 제47권3호
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• pp.188-194
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• 2009

Recently, new extraction technology for manganese nodule has been developed as alternative noble metallic resources. It is important to understand thermodynamic behaviors of phosphorus in low basic slag system from the viewpoint of the refining processing optimization. Thermodynamic behaviors of phosphorus in the $FeO-MnO-CaO-SiO_2-MgO_{satd.}$ slag system were investigated at 1723 K with various oxygen potential and slag composition of low basicity. The experimental results for dependence of phosphorus on oxygen potential and slag basicity indicated that the dissolution mechanism of phosphorus into slag of low basicity could be derived as follows; $[P]+5/4O_2+(O^{2-})=({PO_{3.5}}^{2-})$ Present experimental results implied that stability of phosphorus in slag would be depended on both of $O^{2-}$ (basicity) and content of $Ca^{2+}$ in molten slag. The thermodynamic effect of FeO, MnO and $Na_2O$ on low basicity on phosphate capacity was discussed.

• 한국결정성장학회지
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• 제28권2호
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• pp.80-84
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• 2018

AZ31과 AZ91 Mg 합금을 Na-P 및 Na-Si 전해질을 사용하여 전해질의 농도, 인가전압, 처리시간에 따라 여러가지 조건에서 PEO 처리하여 5%의 농도를 갖는 염수분무법으로 내부식성 연구를 하였다. 일반적으로 산화피막 코팅 두께가 증가하면 내부식성이 증가하였다. 코팅두께보다 산화피막 표면의 기공크기가 커지면 장기 내부식성은 나빠지는 경향을 보인다. 산화피막의 전체적인 산화물 결정상이 증가할수록, 또 MgO 결정상 대신 $Mg_2SiO_4$ 상과 같은 다른 결정상이 증가할수록 내부식성이 월등히 증가하는 것을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3696-3701
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• 2011

The single-crystal structure of partially dehydrated partially $Mg^{2+}$-exchanged zeolite Y, ${\mid}Mg{30.5}Na_{14}(H_2O)_{2.5}{\mid}$ [$Si_{117}Al_{75}O_{384}$]-FAU per unit cell, ${\alpha}$ = 25.5060(1) ${\AA}$, dehydrated at 723 K and $1{\times}10^{-4}$ Pa, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\bar{3}$ m at 100(1) K. The structure was refined using all intensities to the final error indices (using only the 561 reflections with $F_{\circ}$ > $4{\sigma}(F_{\circ})$) $R_1$ = 0.0377 (Based on F) and $R_2$ = 0.1032 (Based on $F^2$). About 30.5 $Mg^{2+}$ ions per unit cell are found at four different crystallographic sites. The 14 $Mg^{2+}$ ions occupy at site I at the center of double 6-ring (Mg-O = 2.231(3) ${\AA}$, O-Mg-O = $89.15(11)^{\circ}$ and $90.85(11)^{\circ}$). Four $Mg^{2+}$ ions are found at site I' in the sodalite cavity; the $Mg^{2+}$ ions are recessed 1.22 ${\AA}$ into the sodalite cavity from their 3-oxygen plane (Mg-O = 2.20(3) ${\AA}$ and O-Mg-O = $92.3(14)^{\circ}$). Site II' positions (opposite single 6-rings in the sodalite cage) are occupied by 2.5 $Mg^{2+}$ ions, each coordinated to an $H_2O$ molecule (Mg-O = 2.187(20) ${\AA}$ and O-Mg-O = $114.2(16)^{\circ}$). The 10 $Mg^{2+}$ ions are nearly three-quarters filled at site II in the supercage, being recessed 0.12 ${\AA}$ into the supercage (Mg-O = 2.123(4) A and O-Mg-O = $119.70(19)^{\circ}$). About 14 $Na^+$ ions per unit cell are found at one crystallographic site; the $Na^+$ ions are located at site II in the supercage (Na-O = 2.234(7) ${\AA}$ and O-Mg-O = $110.5(4)^{\circ}$).

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.11-15
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• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.