• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.162-162
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• 2003

최근에 산화물 인공격자의 우수한 특성으로 인하여 활발한 연구가 진행되고 있다. 본 연구에서는 펄스레이저 증착방법을 이용하여 산소분압 100mTorr, $650^{\circ}C$에서 LSCO/MgO 기판위에 La-50mol% 첨가된 SrTiO$_3$ (SLTO)와 SrTiO$_3$ 를 적층시켜 산화물 인공격자를 만들어 결정구조에 대하여 연구하였다. SrTiO$_3$ (STO)는 상온에서 3.904$\AA$인 cubic perovskite 구조를 가지고 있다. 일반적으로 La$^{3+}$ (1.14$\AA$)은 Sr$^{2+}$(1.12$\AA$)과 이온반경이 거의 유사하기 때문에 ABO 페로브스카이트 구조의 A자리에 치환될 것으로 기대되며 또한 Sr$^{2+}$ 자리에 La$^{3+}$ 가 치환되므로써 발생하는 charge compensation은 Sr 자리에 Vacancy 생성으로 판단된다. 인공격자의 성장확인을 위하여 SLTO와 STO를 10층씩 증착하여 XRD분석을 통하여 평가하여 보았다. 확인된 결과를 바탕으로 산화물 인공격자의 적층 주기를 SLTO layer를 한층으로 고정시키고 STO를 한 층에서 다섯 층까지 다양하게 변화시켰다. 본 연구의 목적은 산화물 인공격자에서 결정결함을 제어하여 소자에 응용할 수 있는 전기적 물성을 평가하기 위함이다. X-ray diffraction 결과 SLTO/STO 인공격자는 (001) 방향으로 우선배향하였으며 적층주기에 따라 격자상수의 변화를 보였다. AES의 depth profile 분석을 통하여 La의 분포를 확인하였으며, HRTEM 분석을 통하여 미세구조분석을 실시하였다.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.166-170
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• 2002

Artificial $BaTiO_3$(BTO)/$SrTiO_3$(STO) oxide superlattice have been deposited on MgO (100) single crystal substrate by pulsed laser deposition(PLD) method. The stacking periodicity of BTO/STO superlattice structure was varied from $BTO_{1\;unit\; cell}/STO_{1\;unit\; cell}$ to $BTO_{125\;unit\; cell}/STO_{125 \;unit \;cell}$ thickness with the total thickness of 100 nm. The result of X-ray diffraction showed the characteristics of superlattice in the BTO/STO multilayer structure. we have also confirmed that there was no interdiffusion at the interface between BTO and STO layers by high resolution transmission electron microscopy(HRTEM). The dielectric constant of superlattice increased with decreasing stacking periodicity of the BTO/STO superlattice within the critical thickness. The dielectric constant of the BTO/STO superlattice reached a maximum i.e., 1230 at a stacking perioicity of $BTO_{2\;unit\; cell}/STO_{2\;unit\; cell}$ .

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.555-559
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• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.5-6
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• 2006

Using the $(Ba_{0.5}Sr_{0.5}){TiO_3}$(BST) powders prepared by the Sol-Gel method, the EST thick films were fabricated on the ${Al_2}{O_3}$ substrates coated with Pt by the screen printing method. Compared with pure EST thick films, the structural and dielectric properties of the EST thick films doped with 1${\sim}$10 wt % MgO were investigated. It was observed that the Mg substitution into EST causes a shift in the cubic-tetragonal EST phase transition peak to a lower temperature. The microstructure of the EST substituted with Mg was homogeneous and dense. Mg substitution into EST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of EST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 158] and 1.4 % at 1 MHz.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.16-23
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• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.104-104
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• 2003

RF magnetron sputtering 법을 이용하여 LaA1O$_3$, SrTiO$_3$, MgO 단결정 기판 위에 BaTiO$_3$ 박막을 에피텍셜하게 증착하여 박막의 특성과 마이크로 웨이브에서의 유전특성을 평가하였다. 각 기판위에 증착한 박막의 격자상수와 FWHM을 조사하였고, pole figure로 에피텍셜 성장을 관찰하였다. 각 시편에 상부 전극으로 interdigital 타입의 전극을 photolithography 하여 캐패시턴스와 tan $\delta$을 조사하였다. 각 기판의 변화에 따른 격자상수 변화와 유전 특성의 변화를 고찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.34-37
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• 1992

In this paper, the $(SrPb)(CaMg)TiO_3$-xBi_2O_3{\cdot}3TiO_2$ ceramics with paraelectric properties were fabricated by the mixed oxide method. In order to investigate the behavior of charged particles, the characteristics of electrical conduction and thermally stimulated current were measured respectively. As a result on characteristics of the electrical conduction, the leakage current was increased as measuring temperature was increased. At room temperature, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to spare charge which injected from electrode, above 40[kV/cm]. Thermally stimulated currents(TSC) spectra with various biasing fields exhibited three distinguished peaks that were denoted as ${\alpha}$, ${\alpha}'$ and ${\beta}$ peak, each of which appeared at nearby -30, 20 and 95[$^{\circ}C$] respectively. It is confirmed that the a peak was due to trap electron trapped in the grainboundary, and ${\alpha}'$ peak that was observed above only 1.5[kV/mm] was attributed to field-enforced ferroelectric polarization. The origin of ${\beta}$ peak was identified as ion migration which caused the degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.202-203
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• 2005

To recognize whether admixture affects some $(Ba_{0.6}Sr_{0.4})TiO_3$, powder in this research $Li_2CO_3$, MgO, $MnO_2$ adding each 3 wt % by Tape casting method thick film make. Sitering temperature lowered 1300$^{\circ}C$ adding $Li_2CO_3$, and density is 5.942g/$cm^3$, and specific inductive capacity increases about decuple and displayed 4000. Climbed sitering temperature 1400$^{\circ}C$ adding MgO, specific inductive capacity reduced 1/2 times. Lowered sintering temperature 1325$^{\circ}C$ low adding $MnO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.56-62
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• 2003

Epitaxial $Bi_4Ti_3O_{12}$ films on $SrTiO_3$(100), L$aA1O_3$(100) and MgO(100) were prepared by sol-gel process using metal naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min In air and annealed at $750^{\circ}C$ for 30 min in air. Crystallinity and in-plane alignment of the film were investigated by X-ray diffraction $\theta$-2$\theta$ scan and P scanning. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. The film prepared on MgO(100) showed the most poor crystallinity and in-plane alignment, compared to those on the other substrates. While the films on $LaA1O_3$(100) and $SrTiO_3$(100) having high crystallinity and in-plane alignment showed the form of columnar grain growth, the film on MgO(100) which had poor crystallinity showed the form of acicula grain growth.