• 제목/요약/키워드: $La_3Ga_5SiO_{14}$

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Langasite$(La_{3}Ga$_{5}SiO_{14})$-type 인 $Ca_{3}TaGa_{3}Si_{2}O_{14}$ 결정의 합성과 경정성장에서의 치환효과 (The substitution effect of Langasite $(La_3Ga$_5SiO_{14})$-type compound, $Ca_3TaGa_3Si_2O_{14}$ crystals on their synthesis and crystal growth)

  • Young Suk Kim;Keun Ho Auh
    • 한국결정성장학회지
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    • 제11권6호
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    • pp.285-289
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    • 2001
  • 본 연구에서는 Langasite 보다 우수한 압전특성을 나타낼 것으로 기대되는 같은 구조를 갖는 새로운 화학조성을 각 자리의 치환을 조사하였다. 합성된 물질은 $Ca_3TaGa_5Si_{2}O_{14}$로서 고상합성법에 의한 합성이 되었으며 이를 바탕으로 $\mu$-PD(micro-pilling-down)와 Cz법에 의해 결정성장을 시도하였다. 성장된 결합은 XRD와 EPMA를 통해 격자상수 화학조성 분포가 분석되었다.

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압전응용을 위한 Langasite(La$_3$Ga$_5$SiO$_{14}$) 단결정의 성장 및 특성 (Growth and Characteristics of Langasite(La$_3$Ga$_5$SiO$_{14}$) Single Crystal for the Piezoelectric Applicatons)

  • 정일형;오근호
    • 한국세라믹학회지
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    • 제36권6호
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    • pp.640-645
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    • 1999
  • Recently rapid progress of electronic and telecommunication technology requires the development of new piezoelectric materials and cellular communication is more and more used in various fields. Langasite(La3Ga5SiO14) is suitable for new piezoelectric properties. Langastie can be applied as communication devices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic characteristics. So in this study Langastie(La3Ga5SiO14) single crystal with 47 mm in diameter and 25mm in length were sucessfully grown by using self-designed Czochralski system. In addition optimum growth conditions for the piezoelectric applications throughout estimation of crystal quality and frequency characteristics were investigated.

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성장분위기에 따른 $La_3Ga_5SiO_{14}$ 단결정의 특성 (Influence of Growth Atmospheres on Characteristics of $Langasite(La_3Ga_5SiO_{14})$ Single Crystals)

  • 정일형;안진호;오근호
    • 한국세라믹학회지
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    • 제36권12호
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    • pp.1364-1368
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    • 1999
  • Langasite( La3Ga5SiO14) is suitable for new piezoelectric properties. Langasite can be applied for communication de-vices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic cha-racteristics. In this study Langasite( La3Ga5SiO14) single crystals were successfully grown by using self-designed Czo-chralski system. From the results of optical properties it was found that crystals having a high quality and higher optical transmittance were grown at atmosphere of 1 to 30 vol% of oxygen content.

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필터와 레죠네이터 응용을 위한 $La_3Ga_5SiO_{14}$ 의 결정화학 및 성장 (Crystal chemistry and growth of$La_3Ga_5SiO_{14}$ for the applications of filter and resonator)

  • 정일형;주경;심광보;오근호
    • 한국결정성장학회지
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    • 제9권1호
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    • pp.74-79
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    • 1999
  • Langasite($La_3Ga_5SiO_14$)는 acoustic 특성에서 quartz, $LiTaO_3$$LiNbO_3$에 비교되는 새로운 압전재료이다. 본 연구에서는 새로운 Langasite 계열의 물질을 공기 중에서 고상반응법에 의해 합성하였고, 합성공정에서의 주요 확산종 을 조사하였다. 이때 합성된 물질의 소결체를 제조하여 각각의 유전적 성질을 비교평가하였다. 또한, Langasite 단결정 을 자체제작한 Czochralski 시스댐을 사용하여 성장시키는데 성공하였고, 성장된 결정의 물성을 평가하였다

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GROWTH AND CHARACTERIZATION OF $La_3Ga_5SiO_{14}$ SINGLE CRYSTALS BY THE FLOATING ZONE METHOD

  • Yoon, Won-Ki;Auh, Keun-Ho
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.253-269
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    • 1999
  • The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

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광대역 고온용 SAW filter 소자용 $La_3Ga_5SiO_{14}$ 단결정의 고밀도 플라즈마 식각 (High density plasma etching of single crystalline $La_3Ga_5SiO_{14}$ for wide band high temperature SAW filter devices)

  • 조현
    • 한국결정성장학회지
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    • 제15권6호
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    • pp.234-238
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    • 2005
  • [ $Cl_2/Ar$ ] 유도결합 플라즈마(ICP)내의 플라즈마 조성, 이온 flux 및 이온 에너지가 $La_3Ga_5SiO_{14}$ 단결정 wafer의 식각속도, 표면 양상 및 화학량론적 조성에 미치는 영향을 조사하였다. 비교적 높은 ICP source power$({\sim}1000W)$ 또는 높은 $Cl_2$ gas 유량 비율 조건으로부터 최고 약 $1600{\AA}/min$의 실용적이고 조절이 용이한 식각속도를 확보하였다. 식각된 $La_3Ga_5SiO_{14}$ 표면은 식각 이전과 비슷하거나 더 낮은 표면 조도 특성을 나타내었으며 식각 공정 전, 후 표면의 화학량론적 조성에 있어서의 변화는 없는 것으로 조사되었다.

Synthesis and Characterization of Langastie-type Materials

  • An, Jin-Ho;Yoon, Won-Ki;Kynug Joo;Auh, Keun-Ho
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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    • pp.115-119
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    • 1998
  • Possibilities of substitution was investigated in the Langadite({{{{ {La }_{3 } {Ga }_{ 5}{SiO }_{14 }}}}}) system.{{{{{TiO}_{2 }}}}} was substitutes for{{{{{SiO}_{2 }}}}} followed by the substitution of{{{{{Nd}_{2 }{O}_{3}}}}}fo{{{{{La}_{2 }{O}_{3}}}}}. An effort to replace GeO2, which is reported to have been substitution for{{{{{SiO}_{2 }}}}} in the Langasit e system, for{{{{{TiO}_{2 }}}}} i n{{{{{ Nd}_{ 3} {Ga }_{5 } {TiO }_{14 } }}}} was also undertaken. In another experiment,{{{{{ Y}_{ 2}{ O}_{3 } }}}} was substituted for{{{{{ La}_{2 } {O }_{ 3} }}}}. All of substitution possibilities were investigated through solid state reactions and analyzed with XRD. Further analysis was carried out with an SEM. Lastly, the dielectric constants of the sintered body were measured.

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Crystal Structure and Piezoelectric Properties of Four Component Langasite A3B Ga3Si2O14 (A = Ca or Sr, B = Ta or Nb)

  • Ohsato, Hitoshi;Iwataki, Tsuyoshi;Morikoshi, Hiroki
    • Transactions on Electrical and Electronic Materials
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    • 제13권4호
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    • pp.171-176
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    • 2012
  • As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.