• 제목/요약/키워드: $La_{1/3}NbO_3$ single crystal

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A-자리 결함 perovskite La1/3NbO3 단결정의 유전특성 (Dielectric properties of A-site defect perovskite La1/3NbO3 single crystal)

  • 손정호
    • 한국결정성장학회지
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    • 제20권6호
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    • pp.249-253
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    • 2010
  • A-자리 경함 perovskite $La_{1/3}NbO_3$ 단결정 시편을 제작하여 10~800 K 온도범위에서 유전특성을 조사하였다. 50 K와 650 K 부근에서 유전이상이 나타났으며, 고온영역(약 650 K)에서 유전상수의 thermal hysterisis가 크게 나타났다. 교류전도도 측정으로부터 560~690 K에서 입내 활성화 에너지는 0.43 eV로 가장 낮게 나타났다. 이들의 결과로부터 50 K 부근의 dielectric anomaly는 $Nb^{5+}$-이온의 antiparallel 변위에 기인한 것이며, 650 K 부근의 dielectric anomaly는 $La^{3+}$-이온의 재배열에 기인한 것으로 추측된다.

적외선 용융대역법에 의한 $La_{1/3}MO_3$ (M=Nb, Ta) 단결정 성장 및 유전 특성 (Crystal growth and dielectric properties of $La_{1/3}MO_3$ (M=Nb, Ta) by infrared floating zone method)

  • ;손정호;조상희
    • 한국결정성장학회지
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    • 제5권3호
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    • pp.233-239
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    • 1995
  • $La_{1/3}NbO_3$$La_{1/3}TaO_3$의 대형 단결정을 적외선 용융대역법으로 제작하여 A-자리 공공이 유전 특성에 미치는 영향에 대하여 조사하였다. Weissenberg 및 Precession 사진에서 $La_{1/3}TaO_3$ 결정의 대칭성은 tetragonal 이며, 격자정수는 a $\approx$ 0.397, b $\approx$ 0.397, c $\approx$ 0.775이다. 유전이상은 $2/3La^{3+}$ 이온이 공공자리로의 이동에 기인한 것으로 추측하였다.

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GROWTH AND CHARACTERIZATION OF $La_3Ga_5SiO_{14}$ SINGLE CRYSTALS BY THE FLOATING ZONE METHOD

  • Yoon, Won-Ki;Auh, Keun-Ho
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.253-269
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    • 1999
  • The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

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필터와 레죠네이터 응용을 위한 $La_3Ga_5SiO_{14}$ 의 결정화학 및 성장 (Crystal chemistry and growth of$La_3Ga_5SiO_{14}$ for the applications of filter and resonator)

  • 정일형;주경;심광보;오근호
    • 한국결정성장학회지
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    • 제9권1호
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    • pp.74-79
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    • 1999
  • Langasite($La_3Ga_5SiO_14$)는 acoustic 특성에서 quartz, $LiTaO_3$$LiNbO_3$에 비교되는 새로운 압전재료이다. 본 연구에서는 새로운 Langasite 계열의 물질을 공기 중에서 고상반응법에 의해 합성하였고, 합성공정에서의 주요 확산종 을 조사하였다. 이때 합성된 물질의 소결체를 제조하여 각각의 유전적 성질을 비교평가하였다. 또한, Langasite 단결정 을 자체제작한 Czochralski 시스댐을 사용하여 성장시키는데 성공하였고, 성장된 결정의 물성을 평가하였다

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Crystal Structure and Piezoelectric Properties of Four Component Langasite A3B Ga3Si2O14 (A = Ca or Sr, B = Ta or Nb)

  • Ohsato, Hitoshi;Iwataki, Tsuyoshi;Morikoshi, Hiroki
    • Transactions on Electrical and Electronic Materials
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    • 제13권4호
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    • pp.171-176
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    • 2012
  • As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.

A promising new piezoelectric material -Langasite and its related compounds-

  • Kawanaka, Hiroyuki;Takeda, Hiroaki;Shimamura, Kiyoshi;Onozato, Norio;Fukuda, Tsuguo
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.145-145
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    • 1997
  • Recent progress of electric technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading chandidates, La$_3$Ga5SiO14(langasite, LGS), La3Nb0.5Ga5.5O14(LNG), La3Ta0.5O14(LTG), to satisfy those requirements. High quality LGS, LNG and LTG single crystals, with dimensions of 2 inches in diameter, were successfully grown by the Czochralski method at a pulling rate of 1mm/h. Since no variation of chemical composition was observed when whole melt in a crucible was crystallized, congruency of these compositions was confirmed. Physical constants such as elastic constants, dielectric constants and piezoelectric constants were measured. Filters and oscillators made of grown LGS, LNG and LTG single crystals showed superior properties such as three times wider passband than that of quartz, low insertion loss and easy processing, Langasite family crystals were shown to be superior materials to other known materials such as quartz, LiTaO$_3$, $\alpha$-AlPO$_4$ and Li$_2$B$_4$O7.

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Enhanced Piezoelectric Properties of Lead-Free La and Nb Co-Modified Bi0.5(Na0.84K0.16)0.5TiO3-SrTiO3 Ceramics

  • Malik, Rizwan Ahmed;Hussain, Ali;Maqbool, Adnan;Zaman, Arif;Song, Tae Kwon;Kim, Won Jeong;Kim, Myong Ho
    • 한국재료학회지
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    • 제25권6호
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    • pp.288-292
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    • 2015
  • New lead-free piezoelectric ceramics $0.96[\{Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}\}_{1-x}La_x(Ti_{1-y}Nb_y)O_3]-0.04SrTiO_3$ (BNKT-ST-LN, where $x=y=0.00{\leq}(x=y){\leq}0.015)$ were synthesized using the conventional solid-state reaction method. Their crystal structure, microstructure, and electrical properties were investigated as a function of the La and Nb (LN) content. The X-ray diffraction patterns revealed the formation of a single-phase perovskite structure for all the LN-modified BNKT-ST ceramics in this study. The temperature dependence of the dielectric curves showed that the maximum dielectric constant temperature ($T_m$) shifted towards lower temperatures and the curves became more diffuse with an increasing LN content. At the optimum composition (LN 0.005), a maximum value of remnant polarization ($33C/cm^2$) with a relatively low coercive field (22 kV/cm) and high piezoelectric constant (215 pC/N) was observed. These results indicate that the LN co-modified BNKT-ST ceramic system is a promising candidate for lead-free piezoelectric materials.

PLD를 이용한 강유전체(PZT, PST, PT)/YBCO 박막 구조의 제작과 전기적인 특성에 관한 연구 (Electrical Properties and Fabrication of Ferroelectric (PZT)

  • 김정환;이재형;문병무
    • 한국전기전자재료학회논문지
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    • 제11권7호
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    • pp.541-545
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    • 1998
  • (PZT, PST, PT)/ YBCO structured have been grown on single crystal $LaAlO_3$ using in-situ Nb:YAG pulsed laser deposition technique. The optimum conditions of fabrication for high quality films have been established under various oxygen pressure. TBCO was used as a metallic electrode for polarizing ferroelectric thin fillms. Lattice mismatch of these materials were found to be with in 3%. As a result XRD patterns and rocking curves, (PZT, PST, PT)/ YBCO multiayered thin films on $LaAlO_3$ substrates showed preferred orientation to c-axis. For invastigation on electrical properties of ferroelectric thin films, remanent polaiztion $P_r$ and coercive field $E_c$ were measured for three samples. At each optimum condition, they showed the values of P_r=60 \mu C/cm^2 and E_c=240kV/ cm for PT, 30\mu C/cm^2 and 105kV/cm for PZT, 1.5\mu C/cm^2$ and 15kV/cm for PST. Frequency dependence of dielectric properties of ferroelectric thin fillms was also investigated. As a result, it showed the frequency dependence was relatively small in the range of 10Hz~10kHz.

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