• Title/Summary/Keyword: $LaSrCoO_3/SrTiO_3(100)$ thin film

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Preparation of Epitaxial $LaSrCoO_3/SrTiO_3(100)$ Structures by The Chemical Solution Process (화학적 용액법에 의한 에피탁샬 $LaSrCoO_3/SrTiO_3(100)$ 구조의 제조)

  • 이형민;황규석;송종은;류현욱;강보안;윤연흠;김병훈
    • Journal of the Korean Ceramic Society
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    • v.36 no.10
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    • pp.1075-1079
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    • 1999
  • LaSrCoO3 thin films were spin-coated onto the SrTiO3(100) substrates by the chemical solution process. X-ray diffraction $\theta$-2$\theta$ scans and X-ray diffraction $\beta$ scans were used to determine the crystallinity and in -plane alignment behavior of the films. The X-ray diffraction pattern showed the film obtained by annealing at 80$0^{\circ}C$ was highly oriented. The X-ray diffraction pole-figure analysis and reciprocal-space mapping (2$\theta$-$\Delta$$\omega$ scans) of the resulting film showed that the film comprising the pseduocubic phase had an epitaxial relationship with the SriO3 substrate.

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Growth and electrical properties of Pb(Zr, Ti)$O_3$ thin films by sol-gel method (솔-젤 법을 이용한 Pb(Zr, Ti)$O_3$ 박막의 성장 및 전기적 특성에 관한 연구)

  • 김봉주;전성진;이재찬;유지범
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.425-431
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    • 1999
  • $Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

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