• Title/Summary/Keyword: $LaA1O_3$

Search Result 765, Processing Time 0.042 seconds

Cathodic Polarization of $La_{0.5}Sr_{0.5}MnO_{3-\delta}$ on $Ce_{0.8}Gd_{0.2}O_{1.9}$ Electrolyte ($Ce_{0.8}Gd_{0.2}O_{1.9}$ 전해질에서 $La_{0.5}Sr_{0.5}MnO_{3-\delta}$ 양극의 과전압특성)

  • 윤희성;노의범;김병호
    • Journal of the Korean Ceramic Society
    • /
    • v.35 no.9
    • /
    • pp.981-987
    • /
    • 1998
  • $La_{0.5}Sr_{0.5}MnO_{3-\delta}$ as air electrode for soild oxide fuel cell was synthesized by a citrate process and its cathodic polarization was determinated by the current interruption method on the Gd-doped ceria as electrolyte. The addition of citric acid increased the exothermic heat for the formation of $La_{0.5}Sr_{0.5}MnO_{3-\delta}$ perovskite oxide. The degree of the initial particle agglomeration was affected by the exothermic heat. Also the increase of cal-cination temperature enlarged the particle size and the higher sintering temperature accelerated the den-sification of $La_{0.5}Sr_{0.5}MnO_{3-\delta}$ layer after its being painted on $Ce_{0.8}Gd_{0.2}O_{1.9}$ electrolyte. In this study $La_{0.5}Sr_{0.5}MnO_{3-\delta}$ synthesized by citrate process of which the molar ratio of citric acid to metal nitrate was 2 calcined at $650^{\circ}C$ for 2hr and sintered at 1100 at $1200^{\circ}C$ for 4 hrs after slurry coating on Ce0.8Gd0.2O1.9 electrlyte showed the lowest cathodic polarization.

  • PDF

Investigation of the La1-x(Ca or Sr)xCrO3x=0 and 0.25) Interconnect Materials for High Temperature Electrolysis of Steam (고온수증기전기분해용 La1-x(Ca or Sr)xCrO3(x=0 and 0.25) 연결재 재료 연구)

  • Jeong, So-Ra;Kang, Kyoung-Soo;Park, Chu-Sik;Lee, Yong-Taek;Bae, Ki-Kwang;Kim, Chang-Hee
    • Korean Chemical Engineering Research
    • /
    • v.46 no.6
    • /
    • pp.1135-1141
    • /
    • 2008
  • The $La_{1-x}(Ca\;or\;Sr)xCrO_3$(x=0 and 0.25) interconnect materials for high temperature electrolysis of steam were investigated in views of sinterability and electrical conductivity. $LaCrO_3$, $La_{0.75}Ca_{0.25}CrO_3$ (LCC), and $La_{0.75}Sr_{0.25}CrO_3$ (LSC) powders were synthesized by coprecipitation method. Crystal structure was confirmed by X-ray diffraction (XRD). The sintering characteristics were analyzed by relative density and scanning electron microscopy. The electrical conductivity was measured by a DC four probe method. From the analyses of relative densities, it was found that the doped $LaCrO_3$ showed better sinterability than $LaCrO_3$ and the those sinterability increased with decrease of those particle sizes. The XRD results at different sintering temperatures for LCC and LSC revealed that the sinterability is closely related to the second phase transformation, that is, the second phase melting above $1,300^{\circ}C$ for LCC and $1,400^{\circ}C$ for LSC significantly promotes the sinterability. In case of electrical conductivities of LCC and LSC, which had a similar relative density, LCC showed better electrical conductivity than LSC.

Effect of LaFeO3 Doping on the Ferroelectric and Piezoelectric Properties of Bi0.5(Na0.78K0.22)0.5TiO3 Lead-Free Piezoceramics (LaFeO3 함량에 따른 (1-x)Bi0.5(Na0.78K0.22)0.5TiO3-xLaFeO3의 강유전, 압전 특성)

  • Park, Chun-Kil;Lim, Ji-Ho;Park, Jung-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.3
    • /
    • pp.157-161
    • /
    • 2017
  • $(1-x)Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-xLaFeO_3$ ceramics were fabricated using a solid state reaction method. The microstructural, ferroelectric and piezoelectric properties were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and polarization hysteresis loops (P-E). XRD results indicated that BNKT ceramic crystal structure modified by $LaFeO_3$ was transformed from a ferroelectric tetragonal to a non-polar pesudo-cubic phase with increased $LaFeO_3$ content. The improved piezoelectric properties resulted from the addition of $LaFeO_3$ up to 3 mol%. The $LaFeO_3$ 3mol% sample showed markedly improved piezoelectric and strain behaviors in comparison with pure BNKT ceramic.

Maturation Induction in vitm of Rana dybowskii Oocyte by Lantlianum Ion (Lanthanum 이온에 의한 북방산개구리(Rana dybowskii) 여포난자의 성숙유도)

  • 유영란;임욱빈;권혁방
    • The Korean Journal of Zoology
    • /
    • v.34 no.2
    • /
    • pp.188-195
    • /
    • 1991
  • The effect of lanthanum ion (La3 +), which is associated with the mobilization of internal calcium, on the regulation of oocyte maturation was investigated with Rana dybowskii follicles. Follicular oocytes matured (germinal vesicle breakdown, GVBD) dose dependently when they were exposed to La3+ (O.O1-1.O mM) and the maturation occurred in 9-12 hours after the la3+(0.33 mM) stimulation. lanthanum also accelerated the onset of maturation of the lollicular oocytes exhibiting spontaneous maturation. Three hours of exposure to La3+ was enough to induce the maturation. The La3 + -induced maturation was not associated with progesterone production by follicle cells, and the maturation was inhibited by forskolin (9 $\mu$ M), and cyclobeximide (0.01 - 1.0 - $\mu$g/2 ml) in the medium. The La3+ and hormone stimulated maturation showed the same patterns of protein phosphorylation and dephosphorylation during the maturation. The data suggest that the oocyte maturation by La3+ stimulation is very similar to that by progesterone. Thus, it seems that internal mobilization of Ca2+ plays a key role in the initiation of oocyte maturation in amphibia.

  • PDF

Sintering behavior and characterization of Ln0.7Ca0.3MnO3 (Ln=Nd, Sm, La) (Ln0.7Ca0.3MnO3 (Ln=Nd, Sm, La)의 소결 거동 및 특성)

  • Chon, Gom-Bai;Koo, Bon-Heun;Lee, Chan-Gyu
    • Korean Journal of Materials Research
    • /
    • v.16 no.1
    • /
    • pp.44-49
    • /
    • 2006
  • Effects of doping rare earth element on Ln site of $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln=Nd, Sm and La) were examined from sintering behavior, structure and magnetic properties. Sintering reactions proceeded rapidly in order of $La_{0.7}Ca_{0.3}MnO_3>Nd_{0.7}Ca_{0.3}MnO_3>Sm_{0.7}Ca_{0.3}MnO_3$. This result can be explained by diffusivity of metal cation. Size of a-axis increased as following order of La$Nd_{0.7}Ca_{0.3}MnO_3$, 93K for $Sm_{0.7}Ca_{0.3}MnO_3$ and 225K for $La_{0.7}Ca_{0.3}MnO_3$ were obtained. This result coincides with change of Mn-O bond length causing by a-axis lattice constant.

Synthesis and Microwave Dielectric Properties of $La(Zn_{1/2}Ti_{1/2})O_3$ ($La(Zn_{1/2}Ti_{1/2})O_3$의 합성 및 고주파 유전특성)

  • 서명기;조서용;홍국선;박순자
    • Journal of the Korean Ceramic Society
    • /
    • v.33 no.9
    • /
    • pp.1019-1023
    • /
    • 1996
  • The dielectric properties at microwave frequencies of B site complex perovskite La(Zn1/2Ti1/2)O3 which has +3 ion in A site were investigated. maximum Q*F value of the specimens was 59000 dielectric constant 34, temperature coefficient of resonant frequency -52 ppm/$^{\circ}C$. XRD pattern of the sintered specimen shows (111) ssuperlattice reflection which indicates Zn and Ti cation ordering.

  • PDF

Sontering behavior and dielectric properties $CaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ microwave dielectrics ($CaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ 마이크로파 유전체의 소결거동 및 유전특성)

  • 김영신;윤상옥;박상엽;김경용
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.3
    • /
    • pp.503-507
    • /
    • 1998
  • Sintering behavior and dielectric peroperties of $xCaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ system were investigated for better understanding of the microwave dielectric materials. In $xCaTiO_3-(1-x)La(Zn_{1/2}Ti_{1/2})O_3$ systems, solid solution type was focused as a function of composition(x=0.4-0.6) and sintered density. With increasing the sintered density, the relative dielectric constant was decreased and Q value was increased and then saturated. In solid solution type, dielectric constant was increased with increasing $CaTiO_3$ content. In $0.5\;CaTiO_3-0.5\; La(Zn_{1/2}Ti_{1/2})O_3$ case, dielectric constant(=48) and temperature coefficient of resonace frequency$(=-1 ppm/^{\circ}C$) were obtained.

  • PDF

Growth and Characterization of LaAlO$_3$ Single Crystals by the Traveling Solvent Floating Zone Method (Travelin Solvent Floating Zone법에 의한 LaAlO$_3$ 단결정의 성장 및 특성)

  • 정일형;임창성;오근호
    • Journal of the Korean Ceramic Society
    • /
    • v.35 no.3
    • /
    • pp.280-286
    • /
    • 1998
  • LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

  • PDF

Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistor Using an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si Structure

  • Jeon, Ho-Seung;Lee, Gwang-Geun;Kim, Joo-Nam;Park, Byung-Eun;Choi, Yun-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.171-172
    • /
    • 2007
  • We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

  • PDF

$La_2O_3/HfO_2$ 나노 층상구조를 이용한 MIM capacitor의 특성 향상

  • O, Il-Gwon;Kim, Min-Gyu;Park, Ju-Sang;Kim, Hyeong-Jun
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2012.05a
    • /
    • pp.82.1-82.1
    • /
    • 2012
  • 란타늄 산화물 ($La_2O_3$) 박막은 하프늄 산화물 ($HfO_2$) 박막보다 높은 유전 상수와 높은 밴드 오프셋으로 인해 dynamic random access memory(DRAM)에서 유전체 재료로써 연구되어 왔다. 그리고 Lanthanum이 도핑된 HfO2이 더 높은 유전 상수와 낮은 누설 전류 밀도를 갖는 다는 사실이 이전에 보고 된 바 있다. 본 연구에서 우리는 ALD를 이용하여, TiN 하부 전극 위에 $La_2O_3$의 위치를 달리하는 $La_2O_3/HfO_2$의 나노 층상조직 구조(두께 10 nm)를 금속 - 절연체 - 금속 (MIM) 구조로 제작 하였다. ALD는 좋은 comformality와 넓은 지역 균일성을 가지며, 원자수준의 두께를 조절할 수 있다는 장점을 갖고 있다. 또한, 다양한 화학 물질들을 이용한 복합적 계층구조를 만들 수 있는 점과 $HfO_2$$La_2O_3$ 계층의 수직 위치를 정확하게 조절할 수 있는 점으로 본 연구에 적합한 증착 방법이다. HfO2 속에 $La_2O_3$ 층을 깊이에 따라 삽입함으로써 $HfO_2$ 계층에 La 도핑의 효과와 더불어 TiN 하부 전극 위의 $La_2O_3$$HfO_2$의 차이점을 확인 하였다. $HfO_2$$250^{\circ}C$에서 TDMAH와 물을 사용하여, $La_2O_3$은 동일한 온도에서 $La(iPrCp)_3$와 물을 사용하여 제작되었다. 화학적 구성 및 binding 구조는 X선 광전자 분광법 (XPS)을 통해 분석하였다. 전기적 특성(유전 상수 및 누설 전류)은 Capacitance-Voltage (CV)와 Current-Voltage (IV) 측정으로 확인하였다. 결과적으로, $La_2O_3$ 또는 $HfO_2$을 한 종류만 사용한 절연층의 전기적 특성보다, $La_2O_3/HfO_2$의 나노 층상조직 구조가 더 나은 특성 (누설 전류 밀도 : $5.5{\times}10^{-7}\;A/cm^2$ @-1MV/cm, EOT : 14.6)을 갖는다는 것을 확인했고, 더불어 $La_2O_3$의 흡습 성질로 인한 화학 구조와 전기적 특성의 일부 차이를 확인하였다. 본 연구에서는 $HfO_2$ 속에 $La_2O_3$층이 TiN 하부 전극 바로 위에 위치할 때, 즉, 공기 중에 노출되지 않은 $La_2O_3/HfO_2$ 구조에서 가장 좋은 특성의 MIM capacitor를 얻을 수 있었다.

  • PDF