• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.830-834
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• 2004

In this study, lead-free pirzoelectric ceramics were investigated for pressure sensor applications as a function of the amount of ${La}_2{O}_3$ addition at $Bi(Na, K)Ti{O}_3-SrTi{O}_3$system. With increasing the amount of addition, the density and dielectric constant increased up to 0.9 wt% ${La}_2{O}_3$ addition and decreased above 0.9 wt% ${La}_2{O}_3$addition. Electromechanical coupling factor( $K_{P}$) showed the maximum value at 0.2 wt% ${La}_2{O}_3$addition and decreased above 0.2 wt% ${La}_2{O}_3$ addition. Electromechanical coupling $factor{(K)}_P$, density, dielectric constant$(\varepsilon_\Gamma)$, piezoelectric constant$(d_33)$ and curie temperature$(T_C)$ showed optimum value of 0.40, 5.75 g/㎤, 768, 215 pC/N and 320 $^{\circ}C$ at 0.2 wt%${La}_2{O}_3$addition, respectively.

• 한국결정성장학회지
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• 제8권3호
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• pp.503-507
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• 1998

마이크로파 유전체로 응용되는 $xCaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$계의 소결시 고용조성 변화(x=0.4-0.6) 및 소결거동에 따른 유전특성에 조사하였다. 소결밀도가 감소함에 따라 유전상수는 감소하였으며 품질계수(Q)는 증가하다 일정한 값을 유지하였다. 고용체형의 경우 유전상수는 $CaTiO_3$조성 증가에 따라 증가하였다. $0.5\;CaTIO_3\;0.5\;La(Zn_{1/2}Ti_{1/2})O_3$의 경우 유전상수 48, 온도계수는 $-1ppm/^{\circ}C$를 나타내었다.

• 한국세라믹학회지
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• 제34권4호
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• pp.368-372
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• 1997

The microwave dielectric properties of (1-x)La2/3TiO3-xLaAlO3 system in which LaAlO3 having $\varepsilon$r$\geq$90 and positive $\tau$f was investigated. The crystal system of (1-x)La2/3TiO3-xLaAlO3 was pseudo-cubic in the range of 0.1$\leq$x$\leq$0.07. Its lattice constant increased with increasing x in spite that the amount of LaAlO3 containing of smaller Al(0.57 $\AA$) ion than Ti(0.64 $\AA$) increased. As the amount of LaAlO3 increased from x=0.1 to 0.9, the relative dielectric constant ($\varepsilon$r) decreased from 50 to 23 and the temperature coefficient of resonant frequency($\tau$f) decreased from +84 to -50. On the other hand, the value of Q.f0 reached a maximum (148,000 at 7 GHz) at x=0.7, where a rapid increase in the peak intensity of XRD occured, and further increased after prolonged sintering. The microwave dielectric properties of $\varepsilon$r=37, Q.f0=47,000 (at 7 GHz), and $\tau$f=-2 ppm/$^{\circ}C$ were obtained near 0.6La2/3TiO3-0.4LaAlO3 (x=0.4) composition.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1257-1261
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• 1994

Phsysical and dielectric properties of $(1-x)CaTiO_3-xLa(Zn_{1/2}Ti_{1/2})O_3$ ceramics were investigated at the temperature range of $25^{\circ}C$ to $80^{\circ}C$ at the frequency of 6 GHz. As increasing addition of the amount of $La(Zn_{1/2}Ti_{1/2})O_3$ to x = 5 mol,Q value was increased due to grain growth and increase of density. For more addition, Q value decreased due to electrical defect. Temperature coefficient of resonant frequency could be controlled by the amount of $La(Zn_{1/2}Ti_{1/2})O_3$, which could be explained by volume mixing rule.

• 한국표면공학회지
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• 제29권6호
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• pp.839-846
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• 1996

Epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$by pulsed laser deposition for ferroelectric field effect transistor. Epitaxial $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures exhibited 70$\mu C/cm^2$ and 17 $\mu C/cm^2$at a positively and negatively poled states, respectively. On the other hand, epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/LaCoO_3$heterostructures show the remnant polarization states opposite to the $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures. This indicates that the interface between (La, Sr)$CoO_3$ (LSCO) and $Pb(Zr, Ti)O_3(PZT)$ layers affects the asymmetric polarization remanence through electrochemical nature. The resistivity of $LaCoO_3$ (LCO) layer was found to be dependent on an ambient oxygen, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1-100 $\Omega$cm. It is suggested that, with an appropriate resistivity of the LCO layer, the LCO/PZT/LSCO heterostructure can be used as the ferroelectric field effect transistor.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.75-81
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• 1999

$CaTiO_3$의 유전적 특성의 문제점을 해결하기 위해 $CaTiO_3$에 복합페로브스카이트 구조를 갖는$ La(Mg_{2/3}Ta_{1/3})O_3$를 고용시켜 마이크로파 유전특성을 조사하였다. XRD분석을 통하여 $CaTiO_3$에 $ La(Mg_{2/3}Ta_{1/3})O_3$를 첨가하면 고용체가 형성되며, 구조적으로는 Orthorhombic구조에서 $ La(Mg_{2/3}Ta_{1/3})O_3$의 첨가량이 증가함에 따라 단사정 대칭의 고용체형으로 바뀌어 가는 것을 확인할 수 있었다. (1-x)$CaTiO_3+xLa(Mg_{2/3}Ta_{1/3})O_3$에서 x값이 0.3일 때 유전율 49, 온도계수+$14ppm/^{\circ}C$, $Q \times f_0$ 값은 17000인 재료를 제조할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.122-125
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• 1995

Using metalorganic deposition technique, $La_2Ti_2O_{7}$ precursor solution was deposited on platinium coated SiO$_2$/SI(100) substrates by spin-coating process. Crystalline and crack-free films of ∼0.2$\mu\textrm{m}$ thickness were successfully fabricated on the above substrate from four different types of $La_2Ti_2O_{7}$ precursor solutions by proper heat treatment in the temperature range of $700^{\circ}C$∼$1200^{\circ}C$. Microstructure and X-ray diffraction analysis of $La_2Ti_2O_{7}$ thin film showed that the crystallization temperature and the preferred orientation of $La_2Ti_2O_{7}$ thin film were strongly dependent on the precursor used.

• 한국결정성장학회지
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• 제30권3호
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• pp.103-109
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• 2020

La₂O₃ 첨가량에 따른 결정상 및 미세구조 변화와 유전특성과의 상관관계에 대해 연구하였다. 고상반응법을 이용해 합성된 0.3 mol% TiO₂ 과잉 BaTiO₃ 분말에 대해 La₂O₃ 첨가량을 다르게 첨가하여 1250℃에서 2시간 동안 소결되었다. 상온에서 측정된 XRD는 La₂O₃ 첨가량이 증가함에 따라 lattice parameter가 변화하였고, 정방정비가 감소하였다. 이는 La³⁺가 Ba²⁺ 자리에 치환되어 정방정상의 불안정성을 높여 입방정상으로 상전이 된 것으로 설명할 수 있다. La₂O₃ 첨가량이 증가할 때, 임계입자성장구동력(Δg_c)이 최대 입자성장구동력 (Δg_max)보다 높아져, 입자크기와 밀도가 감소하였다. 유전상수는 La₂O₃가 증가함에 따라 감소하였는데, 이를 결정상 및 미세구조의 변화에 대한 효과로 분석하였다.

• 대한전기학회논문지
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• 제44권5호
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.