• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.594-602
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• 2011

The effect of ${\alpha}$-, ${\beta}$- and ${\gamma}$-picolines on the stereochemistry of the coordination compounds of lanthanide(III) nitrates derived from 4[N-(furfural)amino]antipyrine semicarbazone (FFAAPS) has been studied. The general composition of the present coordination compounds is [Ln(FFAAPS)$(NO_3)_3$Pic] (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy or Ho and Pic=${\alpha}$-, ${\beta}$- or ${\gamma}$-picolines). All these coordination compounds have been characterized by elemental analyses, molecular weight, molar conductance, magnetic susceptibility, infrared and electronic spectra. The infrared studies suggest that the FFAAPS behaves as a neutral tridentate ligand with N, N, O donor while ${\alpha}$-, ${\beta}$- or ${\gamma}$-picoline is coordinated to the lanthanide(III) ions via heterocyclic N-atom. Nitrates are bicovalently bonded in these compounds. From the electronic spectral data, nephelauxetic effect (${\beta}$), covalence factor ($b^{1/2}$), Sinha parameter (${\delta}%$) and the covalence angular overlap parameter (${\eta}$) have been calculated. Thermal stabilities of these complexes have been studied by thermogravimetric analysis. The coordination number of lanthanide(III) ions in the present compound is found to be ten. The antibacterial studies screening of the primary ligand FFAAPS and the complexes showed that the present complexes have moderate antibacterial activities.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.274-283
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• 1997

These days, according to surprising development of communication enterprises, every soft of devices is getting smaller and cheaper. Among these Devices, microwave dielectric ceramics are studied and progressed briskly as the materials of dielectric resonator. Dielectric properties of BaO-S $M_{2}$ $O_{3}$-Ti $O_{2}$, one of the BaO Lnsub 2/ $O_{3}$-Ti $O_{2}$ (Ln=La, Sm, Nd, Pr…) system, synthesized by solid-reaction and coprecipitation method were investigated. Disk-type samples were sintered at 1250-1400.deg. C for 2hrs. As a result, single phase was not synthesized in both method. First created the second phase of S $M_{2}$ $Ti_{2}$ $O_{7}$, and then the last phase of $Ba_{3.75}$S $m_{9.5}$ $Ti_{18}$ $O_{54}$, Ti $O_{2}$, and $Ba_{2}$ $Ti_{9}$ $O_{20}$. When the sample was sintered at 1280.deg. C (in solid reaction method) and at 1310.deg. C (in coprecipitation method), it obtained highest dielectric constant (72.96 and 71.70, respectively) and high Q value. Above that temperature, dielectric constant and Q value decreased because of lattice defect according to oxygen vacancies........

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.186-191
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• 2009

Thermoelectric power and resistivity are measured for the perovskite $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) in the temperature range 77 K - 300 K. The measured thermoelectric power of $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) increases linearly with temperature and is represented by A + BT. The x = 0.1 sample showed metallic behavior, the x = 0.3 showed metal and insulating transition around 150 K, and x = 0.5 showed insulating behavior the over the whole temperature range. The electrical resistivity of x = 0.1 shows linear temperature dependence over the whole temperature range and $T^2$ dependence. On the other hand, the electrical resistivity of x = 0.3 shows a linear relation between $ln{\rho}$ and $T^{-1/4}$ (variable range hopping mechanism) in the range of 77 K to 150 K. For x = 0.5, the temperature dependence of resistivity is characteristic of insulating materials; the resistivity data was fitted to an exponential law, such as ln(${\rho}/T$) and $T^{-1}$, which is usually attributed to a small polaron hopping mechanism. These experimental results are interpreted in terms of the spin polaron (x = 0.1) and variable range hopping (x = 0.3) or small polaron hopping (x = 0.5) of an almost localized $Ni^{3+}$ 3d polaron.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.835-839
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• 2002

Stoichiometric $LiNbO_3$(LN) single crystals of 1 mm diameter and 30∼40 mm length with co-doped the $Er_2O_3$ and MgO were grown by the Micro-Pulling Down(${\mu}$-PD) method. The grown crystals were investigated for the change of the up-conversion property by the $Er_2O_3$ and MgO addition and the optical damage by the MgO concentration. Also, the crystals were studied the defects using the optical microscope and it is identified the homogeneities of the distribution of the $Er_2O_3$ and MgO concentration by the Electron Probe Micro Analysis(EPMA).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.92-99
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• 1991

The reaction obtaining $SiO_2$ fine particle from $ Si(OC_2H_5)_4$consists of two steps, that is, hydrolysis and polycondensation. Polycondensation is the first order with respect to the concentration of $Si(OC_2H_5)_4$As the concentration of water, ammonia reaction temperature are increased, the reaction rate constant of polycondensation is increased.Silica particles formed are spherical and very uniformly dispersed. The diameters of them are be-tween 0.06 and $0.27\mu\textrm{m}$. As the initial concentration of $Si(OC_2H_5)_4$is decreased and the reaction temper-ature is increased, the diameters of silica particles are reduced. The rate of particles growth derived from time vs, conversion data, is represented as follows; d=a.ln(Xa)+b, where d is the diameter of silica and a, b are constant. The final diameter of silica approaches to the value of b.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.32-37
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• 2006

Rare-earth niobates, ag (Ln = Y, La, Gd) are well-known self-activated phosphors due to charge transfer in $NbO^{3-}_4$ showing a broad and strong emission band in the spectral region around 410 nm. In order to find new blue and red phosphors for FED, $LaNbO_4$ : X (X = Bi, Eu) phosphors are prepared through solid-state reactions at high temperature. The optimum reaction condition for these phosphors to give maximum emission intensity is obtained when it is first fired at $1250^{\circ}C$ for 2 h followed by second firing at $1400^{\circ}C$ for 1 h. Under irradiation at 254 nm, $1mol\%\;Bi^{3+}$ doped $LaNbO_4$ phosphor shows strong blue emission band with a range of $420\~450nm$. Also $10mol\%\;Eu^{3+}$ doped $LaNbO_4$ phosphor shows the maximum emission intensity at about 610 nm. Emission peaks at $415\~460nm$, $530\~560nm$and $570\~620nm$are observed in phosphors below $10mol\%\;Eu^{3+}$ doped $LaNbO_4$. Similar results are obtained in cathodoluminescent property of these phosphors.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• Journal of Veterinary Clinics
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• v.17 no.2
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• pp.316-320
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• 2000

The present study conducted to evaluate the isolation frequency of Salmonella sap., Escherichia O157:H7 and Listeria monocytogenes in fecal samples collected form 33 dairy cow feedlots in West Gyeong-nam province from tan. 179\ulcorner to Feb. 1999. Salmonella spp. were isolated from 8.7% of fecal samples and 57.5% of dairy cow feedlots participaiting in this study had at least one positive fecal 7ample. The isolation rates of Salmonella spp. in each herd size were 42.9% in ln less than 125 heads, 63.6% in 25% to 50 heads and 75% in more than 50 heads. Of the positive sample, the most common serogroup recovered was Bl(31.5%), followed by C1 and D(22.9%), C2(16.2%), A(4.2%) and E(2.1%), in order. However, E. coli O157:H7 and Listeria monocytogenes were net detected in the fecal samples collected from all feedlots.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.312-315
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• 1990

This report the loading teat results of OF cable core in LN2 testing chamber for the development of a cryogenic cable