• 한국재료학회지
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• 제21권2호
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• pp.83-88
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• 2011

Nano-technology is a super microscopic technology to deal with structures of 100 nm or smaller. This technology also involves the developing of $TiO_2$ materials or $TiO_2$ devices within that size. The aim of the present paper is to synthesize $WO_x$ doped nano-$TiO_2$ by the Sonochemistry method and to evaluate the effect of different percentages (0.5-5 wt%) of tungsten oxide load on $TiO_2$ in methylene blue (MB) elimination. The samples were characterized using such different techniques as X-ray diffraction (XRD), TEM, SEM, and UV-VIS absorption spectra. The photo-catalytic activity of tungsten oxide doped $TiO_2$ was evaluated through the elimination of methylene blue using UV-irradiation (315-400nm). The best result was found with 5 wt% $WO_x$ doped $TiO_2$. It has been confirmed that $WO_x-TiO_2$ could be excited by visible light (E<3.2 eV) and that the recombination rate of electrons/holes in $WO_x-TiO_2$ declined due to the existence of $WO_x$ doped in $TiO_2$.

• 한국안전학회지
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• 제20권4호
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3355-3360
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• 2012

To promote the photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs), graphene is introduced as a working electrode with $TiO_2$ in this study, because it has great transparency and very good conductivity. XRD patterns indicate the presence of graphene and $TiO_2$ particles in graphene-linked $TiO_2$ samples. Moreover, TEM pictures also show that the nano-sized $TiO_2$ particles are highly dispersed and well-linked onto the thin layered graphene. On the basis of the UV-visible spectra, the band gaps of $TiO_2$, 1.0 wt % graphene-$TiO_2$, 5.0 wt % graphene-$TiO_2$, and 10.0 wt % graphene-$TiO_2$ are 3.16, 2.94, 2.25, and 2.11 eV, respectively. Compared to pure $TiO_2$, the energy conversion efficiency was enhanced considerably by the application of graphene-linked $TiO_2$ anode films in the DSSCs to approximately 6.05% for 0.1 wt % graphene-$TiO_2$ with N719 dye (10.0 mm film thickness and $5.0mm{\times}5.0mm$ cell area) under $100mW/cm^2$ of simulated sunlight. The quantum efficiency was the highest when 1.0 wt % of graphene was used. In impedance curves, the resistance was smallest for 1.0 wt % graphene-$TiO_2$-DSSC.

• Bulletin of the Korean Chemical Society
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• 제30권5호
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• pp.1047-1053
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• 2009

The future use of hydrogen as an energy source is expected to increase on account of its environmentally friendliness. In order to enhance the production of hydrogen, Pd ions (0.01, 0.05, 0.1, and 0.5 mol%) were incorporated $TiO_2$ (Pd-$TiO_2$) and used as a photocatalyst. The UV-visible absorbance decreased with increasing level of palladium incorporation without a wavelength shift. Although all the absorption plots showed excitation characteristics, there was an asymmetric tail observed towards a higher wavelength caused by scattering. However, the intensity of the photoluminescence (PL) curves of Pd-$TiO_2$ was smaller, with the smallest case being observed at 0.1 and 0.5 mol% Pd-$TiO_2$, which was attributedto recombination between the excited electrons and holes. Based on these optical characteristics, the evolution of $H_2$ from methanol/water (1:1) photo-splitting over Pd-$TiO_2$ in the liquid system was enhanced, compared with that over pure $TiO_2$. In particular, 2.4 mL of $H_2$ gas was produced after 8 h when 0.5 g of a 1.0 mol% Pd-$TiO_2$ catalyst was used. $H_2$ was stably evolved even after 28 h without catalytic deactivation, and the amount of $H_2$ produced reached 14.5 mL after 28 h. This is in contrast to the case of the Pd 0.1 mol% impregnated $TiO_2$ of $H_2$ evolution of 17.5 mL due to the more decreasedelectron-hole recombination.

• 한국수소및신에너지학회논문집
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• 제27권5호
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• pp.471-477
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• 2016

In this research, the Ir supported $TiO_2$ (P25) catalyst was prepared by precipitation method for oxygen evolution reaction. The $Ir/TiO_2$ catalyst was synthesised by reduction reaction using reducing agent. Physiochemical characterizations of synthesized $Ir/TiO_2$ catalyst was studied by means of SEM, EDS mapping, TEM and XRD. The Electrochemical characterizations were tested by using the technique of CV and LSV by RDE and Potentiostat. Physicochemical properties were characterized with XRD where Iridium metal morphology and Ir(111) and Ir(222) peaks were founded. $Ir0.2Ru0.8O_2$ exhibited higher OER activity than $Ir0.5Ru0.5O_2$ followed by $Ir/TiO_2$ and $IrO_2$.

• 한국세라믹학회지
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• 제39권11호
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• pp.1108-1112
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• 2002

산화물 제어봉 물질로서 $Dy_xTi_yO_z$ 소결체를 powder process에 의해 제조하였다. $Dy_2O_3+TiO_2$ 혼합분말의 소결성과 고용체의 상을 TMA와 XRD로써 각각 분석하였으며, 소결체의 비열과 열확산계수를 측정하여 열전도도를 구하였다. $Dy_xTi_yO_z$에서 Dy의 함량에 따라 소결성과 밀도가 변하였고 $3\;g\;Dy/cm^3\;Dy_xTi_yO_z$의 경우 $1580{\circ}C$의 소결온도에서 용융이 일어났다. $4.00\;g\;Dy/cm^3$ 소결체에는 $Dy_2TiO_5+Dy_2Ti_2O_7$의 두 상이 존재하며 $4.54\;g\;Dy/cm^3$의 경우 $Dy_2TiO_5$의 단일 상만이 존재하는 결과를 보였다. $Dy_xTi_yO_z$의 열전도도는 $25~600{\circ}C$ 범위에서 온도에 따라 큰 변화가 없으며 $1600{\circ}C$ 소결체가 1.69∼1.78 W/mK, 1550$^{\circ}C$ 소결체의 경우에는 1.49~1.55 W/mK이었다.

• 한국응용과학기술학회지
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• 제35권1호
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• pp.163-172
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• 2018

본 연구에서는 질소산화물 제거용 환원제로 사용하는 요소 수용액을 암모니아로 전환하는데 있어 SCR 상용촉매의 활용가능성을 확인하기위해 촉매조성에 따른 반응온도, 공간속도의 영향에 대한 연구를 수행하였다. 연구결과 SCR 촉매로 널리 사용되는 $V_2O_5/TiO_2$ 촉매는 $TiO_2$ 및 $WO_3-V_2O_5/TiO_2$ 촉매에 비해 암모니아 생성이 우수함을 보였다. 활성금속을 담지하지 않은 $TiO_2$ 촉매는 $V_2O_5$ 혹은 $WO_3-V_2O_5$를 담지 한 촉매에 비해 공간속도에 따른 암모니아 전환에 영향을 받지 않는 것으로 나타났으며, 활성금속을 담지 한 촉매는 공간속도가 증가함에 따라 암모니아 생성 농도가 감소됨을 확인하였다.

• 한국재료학회지
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• 제19권11호
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• pp.613-618
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• 2009

We designed new compositions for lead free and low temperature sealing glass frit of $ZnO-V_2O_5-P_2O_5$ system, which can be used for PDP (Plasma Display Panel) or other electronic devices. The $ZnO-V_2O_5-P_2O_5$ system can be used as a sealing material at temperatures even lower than 430$^{\circ}C$. This system, however, showed lower bonding strength with glass substrate compared to commercialized Pb based sealing materials. So, we added $TiO_2$ as a promoter for bonding strength. We examined the effect of $TiO_2$ addition on sealing behaviors of $ZnO-V_2O_5-P_2O_5$ glasses with the data for flow button, wetting angle, temporary & permanent residual stress of glass substrate, EPMA analysis of interface between sealing materials and glass substrate, and bonding strength. As a result, sealing characteristics of $ZnO-V_2O_5-P_2O_5$ system glasses were improved with $TiO_2$ addition, but showed a maximum value at 5 mol% $TiO_2$ addition. The reason for improved bonding characteristics was considered to be the chemical interaction between glass substrate and sealing glass, and structural densification of sealing glass itself.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2459-2465
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• 2007

V2O5/TiO2-ZrO2 catalyst modified with V2O5 was prepared by adding Ti(OH)4-Zr(OH)4 powder into an aqueous solution of ammonium metavanadate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using XRD, DSC, solid-state 51V NMR, and FTIR. In the case of calcination temperature of 500 oC, for the catalysts containing low loading V2O5 below 25 wt % vanadium oxide was in a highly dispersed state, while for catalysts containing high loading V2O5 equal to or above 25 wt % vanadium oxide was well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of TiO2-ZrO2. The strong acid sites were formed through the bonding between dispersed V2O5 and TiO2-ZrO2. The larger the dispersed V2O5 amount, the higher both the acidity and catalytic activities for acid catalysis.