• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.485-490
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• 2010

In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of $Al_2O_3-Y_2O_3$-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at $1750^{\circ}C$ under 20 MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.

• Journal of the Korean Ceramic Society
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• v.16 no.3
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• pp.135-141
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• 1979

This study seeks to find optimum conditions for the heating schedule of the Diopside-Devitrite system, to find the amounts and the kinds of nucleus which effect the crystal growth and forming nucleus. Generally, crystallization in the glass depends on the number of nucleus growing in the internal system and the rate of crystal growth. In order to obtain homogeneous polystalline phae, Diopside as MgO source and $ZrO_2$.$P_2O_5$, $TiO_2$, NaF, $CaF_2$ as nucleating agents were added to the $Na_2O$.CaO.$6SiO_2$ glass. The results obtained were Summarized as follows. 1) Optimum Batch Composition of base glass is 76.82 wt.% $SiO_2$, 5.84 wt.% CaO, 4.54 wt.% MgO and 9.80 wt.% $Na_2O$. 2) Best heating schedule.140$0^{\circ}C$(Melting)coolinglongrightarrow95$0^{\circ}C$reheatinglongrightarrow$1100^{\circ}C$coolinglongrightarrowRoom Temp. 3) The optimum amounts of $ZrO_2$.$P_2O_5$, $TiO_2$ and $CaF_2$ are 3wt.% and that of NaF is 4 wt.% as a nucleating agents.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.630-634
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• 1999

Porous mullites were fabricated using $Al(OH)_3$ and amorphous $SiO_2$ as starting materials by reaction sintering method. The molar ratios of alumina and silica varied from stoichiometric mullite composition to silica-rich and alumina-rich compositions. $AlF_3$ of 0, 1, 5, 10 wt% wad added to each composition, and the effects of composition and the additive for the formation of mullite were examined. The temperature of mullite formation decreased as the amount of $AlF_3$ increased, and themullite phase was formed in the stoichiometric composition in addition of 5 wt% $AlF_3$ at $1250^{\circ}C$ and porous whiskered mullite were synthesized in the sample sintered at $1300^{\circ}C$ and higher temperature. The effect of temperature on the mullite formation was not observed for the sample with 5 wt% or higher content of $AlF_3$, and the body showed little contraction after sintering.

• Journal of the Korea Concrete Institute
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• v.18 no.1 s.91
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• pp.57-64
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• 2006

The crack presented in concrete structures causes a structural defect, the durability decrease, and external damages etc. Therefore, it is necessary to improve durability through the effort to control the crack. Fluosilicic acid($H_2SiF_6$) is recovered as aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded $H_3PO_4$ or HF. Generally, fluosilicates prepared by the reaction between $H_2SiF_6$ and metal salts. Addition of fluosilicates to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. Mix proportions for experiment were modulated at 0.45 of water to cement ratio and $0.0{\sim}2.0%$ of adding ratio of fluosilicate salt based inorganic compound. To evaluate correlation of concrete strength and adding ratio of fluosilicate salt based inorganic compound, the tests were performed about design strength(21, 24, 27 MPa) with 0.5% of adding ratio of fluosilicate salt based inorganic compound. Applications of fluosilicate salt based inorganic compound to reduce cracks resulted from plastic and drying shrinkage, to improve durability are presented in this paper. Durability was evaluated as neutralization, chloride ion penetration depth, freezing thawing resistant tests and weight loss according reinforcement corrosion. It is ascertained that the concrete added fluosilicate salt based inorganic compound showed m ability to reduce the total area and maximum crack width significantly as compared non-added concrete. In addition, the durability of concrete improved because of resistance to crack and watertightness by packing role of fluosilicate salt based inorganic compound obtained and pozzolanic reaction of soluble $SiO_2$ than non-added concrete.

• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.6
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• pp.102-107
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• 2007

A fast response $CO_2$ ($fCO_2$) analyzer for real-time measurement of carbon dioxide concentration during transient states of internal combustion engines has been developed. This analyzer uses non-dispersive infrared absorption (NDIR) technique for measuring $CO_2$ concentration and Kalman filter for removing noise components from output signals. The analyzer has good linearity, repeatability and drift with a response time of 11 ms; it is sufficiently fast to detect $CO_2$ concentration during transient states of internal combustion engines. The $fCO_2$ analyzer was used to measure transient $CO_2$ concentration of exhaust gas of the SI engine with a standard gas analyzer, and the signal of the $fCO_2$ analyzer was compared to that of the standard gas analyzer. The two concentrations were well matched during the steady state, and the $fCO_2$ analyzer could measure the variations of $CO_2$ concentration during the transient state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.1-8
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• 2005

An area-efficient DC-DC voltage up-converter in a poly-Si TFT technology for system-on-glass is described which provides low-ripple output. The voltage up-converter is composed of charge-pumping circuit, comparator with threshold voltage mismatch compensation, oscillator, buffer, and delay circuit for multi-phase clock generation. The low ripple output is obtained by multi-phase clocking without increasing neither clock frequency nor filtering capacitor The measurement results have shown that the ripple on the output voltage with 4-phase clocking is 123mV, while Dickson and conventional cross-coupled charge pump has 590mV and 215mV voltage ripple, respectively, for $Rout=100k\Omega$, Cout-100pF, and fclk=1MHz. The filtering capacitor required for 50mV ripple voltage is 1029pF and 575pF for Dickson and conventional cross-coupled structure, for Iout=100uA, and fclk=1MHz, while the proposed multi-phase clocking DC-DC converter with 4-phase and 6-phase clocking requires only 290pF and 157pF, respectively. The efficiency of conventional and the multi-phase clocking DC-DC converter with 4-phase clocking is $65.7\%\;and\;65.3\%$, respectively, while Dickson charge pump has $59\%$ efficiency.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.211-217
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• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• Journal of the Korean Chemical Society
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• v.54 no.6
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• pp.723-726
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• 2010

An efficient and simplified protocol for $NaHSO_4/SiO_2$ catalyzed solvent-free synthesis of $\beta$-enaminone and 2-methylquinolin-4(1H)-one derivatives under microwave irradiation is described. A series of functionalized derivatives have been synthesized in shorter reaction times with moderate to good yields. The use of milder catalyst in non-conventional method offers significant advantages over conventional methods, such as higher selectivities, simplicity, solvent-free reaction and non-environmental polluting conditions.