• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.33-38
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• 2003

Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.376-382
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• 2006

In the $Al(OH)_3-SiO_2-AlF_3$ system, leaf-shaped fluorotopaz was first formed at $800^{\circ}C$ and mullite whisker was formed at $1,100^{\circ}C$. The mass transportation of Al and Si as gas phase, the fast reaction and growth, and the absence of liquid phase existence in mullite whisker showed that the formation and growth of mullite was from the solid-vapor reaction.

• Corrosion Science and Technology
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• v.4 no.6
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• pp.226-230
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• 2005

Si incorporated diamond-like carbon (Si-DLC) films ranging from 0 to 2 at.% contents were deposited on STS 316L substrates for orthopedic implants by means of r.f. plasma-assisted chemical vapor deposition (r.f. PACVD) technique, using mixtures of benzene ($C_6H_6$) and silane ($SiH_4$) as the precursor gases. This study provides the reliable and quantitative data for assessment of the effect of Si incorporation on corrosion property in the simulated body fluid environment through the electrochemical test. It was found that corrosion to resistance of Si-DLC coatings with increasing Si content are improved owing to high $sp^3$ bonding.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1351_1352
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• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.277-281
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• 2003

Effects of $CaF_2$ addition as a filler on the high frequency dielectric properties and sintering of CaO-$Al_2O_3-SiO_2-B_2O_3$(CASB) and ZnO-MgO-$B_2O_3-SiO_2$(ZMBS) glass composites were investigated. The optimal glass composition in the CASB system was 33.0CaO-$17.0Al_2O_3-35.0SiO_2-15.0B_O_3$(in wt%). The corresponding dielectric properties were k=8.1 and $Q{\times}fo$=1,200GHz. The sintering temperature was $800{\mu}m$. In case of 2MBS system, 25.0ZnO-25.0MgO-20.0$B_2O_3-30.0SiO_2$(in wt%) glass showed k=6.8 and $Q{\times}fo$=5,200GHz when it was sintered at $750^{\circ}C$. The maximum amount of $CaF_2$ in the CASB and 2MBS glass system without any detrimental effect on the sintering was 25.0 v/o and 15.0 v/o, respectively. The addition of $CaF_2$ in the glass systems improved the high frequency dielectric properties. In case of CASB+$CaF_2$ composite, k was 7.1 and $Q{\times}fo$ was 2,300GHz. And in case of 2MBS+$CaF_2$ composite, k was 5.9 and $Q{\times}fo$ was 8,100GHz. $CaF_2$ addition also reduced sintering temperature. Effects of $CaF_2$ on the dielectric and sintering properties was analyzed in terms of viscosity and crystallization behavior changes due to the interaction between $CaF_2$ and the glass systems.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.519-524
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• 2005

A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was tuned to reasonably predict the reactive ion etching behavior and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Resources Recycling
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• v.17 no.5
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• pp.3-10
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• 2008

We researched recycle of mixed waste acids including HF, $CH_{3}COOH$, $HNO_3$ produced during semiconductor wafer process. At first, we recovered HF in form of $Na_{2}SiF_6$ by precipitation using $NaNO_3$ and $Na_{2}SiO_3$. Concentration of HF was made down from 110 g/L, initial concectration, to 0.5 g/L and Recovery rate of HF was 99.5%. After recovery of HF, concentration of $HNO_3$ and $CH_{3}COOH$ is 498 g/L, 265 g/L respectively. From that mixed acid, we recovered $CH_{3}COOH$ using 2 stages of fractional distillation. In first stage, $CH_{3}COOH$ was distilled for separation from $HNO_3$. And in second stage, we recoverd refined $CH_{3}COOH$ by using fractional distillation for removing a little amount of $HNO_3$ in $CH_{3}COOH$ vapor. The concentration of recovered $CH_{3}COOH$ in second stage is 20% and finally recovery rate of $CH_{3}COOH$ is about 87.5%.