• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.260-264
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• 1999

Effect of the particle size of $MgTiO_3$ and $CaTiO_3$ on the microstructural evolution during sintering of $0.93MgTiO_3-0.07CaTiO_3$ system was investigated. Microwave dielectric characteristics of the sintered ceramics were also measured. The microstructural evolutions were explained with an emphasis on the entrapping behavior of $CaTiO_3$ grain into the $MgTiO_3$ grain and were correlated with microwave dielectric characteristics. With an increasing particle size ratio between $CaTiO_3$and $MgTiO_3$, the fraction of entraped $CaTiO_3$ grains increased, which grain growth of $MgTiO_3$were concurrently accelerated due to decreasing drag force of its boundary migration. Besides, $CaTiO_3$-grain entrapment into the $MgTiO_3$grain interior led to decreaseing quality factor values.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.441-445
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• 1999

Alkaline earth metal oxides were added to the conventional MgO films as a protective layer for dielectric materials to have lower firing voltage(Vf) of the plasma display panel(PDP). Panels with various protective layers of MgO-alkaline earth metal oxides were prepared on glass by using e-beam evaporation and its effect on firing voltage characteristics were investigated. (Ba-Mg)O films had poor voltage characteristics because of higher activation energy of BaO. But, (Sr-Mg)O, (Ca-Mg)O and (Ca-Sr-Mg) O had better voltage characteristics than the conventional MgO. A mixture film of (Mg-Ca-Sr)O show the lowest firing voltage which is less than that of MgO by 20V. The chemical composition to have lowest firing voltage is MgO:SrO:CaO ratio of 6:2:2. The mixture of MgO-Alkaline earth metal oxides films showed good transmittance properties within the visual range.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.647-651
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• 2007

In order to investigate the excited-state intramolecular proton transfer (ESIPT) process of dihydroxyanthraquinones (DHAQ; 1,5-DHAQ and 1,8-DHAQ) in organic-inorganic hybrid matrices, transparent SiO2, SiO2- Al2O3, and Al2O3 matrices chemically bonded with DHAQ were prepared using a sol-gel technique. The absorption maxima of 1,5- and 1,8-DHAQ in SiO2 matrices are observed at around 420 nm, whereas those of DHAQ in both SiO2-Al2O3 and Al2O3 matrices are markedly shifted to longer wavelength compared with those in SiO2 matrix. This indicates that DAHQ forms a chemical bond with an Al atom of Al2O3. The DHAQ in SiO2 matrix shows a markedly Stokes-shifted emission which is originated from the ESIPT in DHAQ. Based on the emission lifetimes of DHAQ, the ESIPT of DHAQ was found to be strongly affected by the chemical interaction with Al atom in the Al2O3-related matrices.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1147-1149
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• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• Resources Recycling
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• v.20 no.4
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• pp.71-77
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• 2011

$MoO_3$ powders were reduced to $MoO_2$ under Ar+$H_2$ gas mixture in a tubular furnace at temperature range 723~873 K. Reaction rate was quantitatively deduced by measuring relative humidity of off gas. Observed reaction rate increased significantly with hydrogen partial pressure and reaction temperature and the rate of $H_2O$ evolution increased drastically during the initial period of reduction. As reduction proceeded, however, $H_2O$ partial pressure decreased noticeably. During the initial period of the reduction, a linear relationship for time dependence of the reduction fraction was observed. The activation energy for the reduction of $MoO_3$ to $MoO_2$was 73.56 kJ/mol during the initial period of reduction.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.35-35
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• 2000

• Progress in Superconductivity
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• v.4 no.2
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• pp.148-152
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• 2003

We have observed the temperature dependences of Bi $L_{III}$ edge spectra by extended X-ray absorption spectroscopy for a high quality single crystal and a powder of the $Ba_{0.6}K_{0.4}BiO_3$ superconductor. $Ba_{0.6}K_{0.4}BiO_3$ has the cubic structure and metallic states. The deformation of the $BiO_{6}$ octahedra, which is due to the anomalies of the Bi-O and Bi-Ba bond length, was showed by the double-shell fit. It was clearly found that these anomalies are owing to the difference in the strength of Bi-O bonds. The temperature dependences of both bond lengths and the Debye-Walter factor ${\sigma}^2$ of the Bi-O and Bi-(Ba,K) bond are discussed to illustrate local structural features of the $Ba_{0.6}K_{0.4}BiO_3$

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.658-664
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• 1997

The effect of metal oxides($K_2O, MgO, CaO,Al_2O_3$, and $TiO_2$) on the kinds of pure $SiO_2$ phase, and $SiO_2$ phases in the composition of vitreous porcelain body was investigated. Also, the effect of the ratio $SiO_2$ to $Al_2O_3$ in the composition of porcelain body with stabilized of cristobalite phase was investigated. In the case of the addition of $K_2O, MgO, CaO, Al_2O_3$, and $TiO_2$ to pure $SiO_2$, the major phase was $\alpha$-cristobalite, $\alpha$-cristobalite, $\alpha$-quartz, $\alpha$-quartz and amorphous, respectively. As the ratio of $SiO_2$ to $Al_2O_3$ in the composition of porcelain body was decreased, the stabilization of cristobalite phase was promoted and only the critical value of $SiO_2/Al_2O_3$ ratio that stabilizing the cristobalite phase in it was 68.10/22.75. The addition of $K_2$O, MgO, CaO,Al_2O_3$, and $TiO_2$ to the composition of porcelain body stabilized already did not affect on the formation of $\alpha$-cristobalite phase which degraded the thermal properties of porcelain body, and suppressed the formation of a, $\beta$-cristobalite.