• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.151.2-151.2
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• 2015

본 연구에서는 indium-tin-oxide(ITO)/1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile(HAT-CN)/N,N'-di(naphthalene-lyl)-N,N'-diphenyl-benzidine(NPB)/4,4'-Bis(N-carbazolyl)-1,1'-biphenyl(CBP)/2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)TPBi/tris-(8-hydroxyquinoline) aluminum($Alq_3$)/LiF/Al 구조를 가진 유기 발광 다이오드 소자의 발광층에 $Ir(ppy)_3$(2% wt)을 도핑하여 소자의 특성 변화를 살펴보았다. $Ir(ppy)_3$의 두께는 5nm이고 도핑 위치는 정공 수송층과 발광층 계면의 0nm에서부터 25nm까지 5nm간격으로 도핑을 하였다. 실험 결과 소자의 효율은 도핑 위치가 정공 수송층에서 25nm떨어진 위치일 때 가장 높았고, 10nm일 때 가장 낮았다. 이는 도핑 부분의 위치가 정공 차단층에 가까워질수록 정공과 전자의 균형이 좋아지는 것이 소자 성능을 향상시키는 원인으로 추측된다.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.53-57
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, internal quantum efficiency can reach 100%, compared with 25% in the case of the fluorescent material. Thus, phosphorescent OLEDs have recently been extensively studied and shown higher internal quantum efficiency than the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs with the green emitting phosphor, $Ir(ppy)_3$ (tris(2-phenylpyridine)iridium). The device with a structure of ITO/TPD$Ir(ppy)_3$ doped in BCP/BCP/$Alq_3$/Li:Al/Al was fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of $Ir(ppy)_3$, we fabricated several devices and investigated their characteristics.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.166-166
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• 2006

The photoluminescence (PL) efficiency of $Ir(ppy)_{3}$:PVK is lower than $Ir(ppy)_{3}$:CBP for the whole range of doping concentration and this low PL efficiency can be a reason of the lower efficiency of PhPLED than PhOLED. The lower efficiency is originated from the large bi-excitonic quenching such as the triplet-triplet annihilation. The PhPLEDs showed very short lifetime. The short lifetime was found to be originated from the instability of the doubly reduced $Ir(ppy)_{3^{-2}}$. The double reduction takes place because of the low electron mobility of PVK and large energy difference of LUMO level between PVK and $Ir(ppy)_{3}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2010년도 춘계학술발표논문집 1부
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• pp.363-365
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• 2010

고분자 발광다이오드(polymer light emitting diode, PLED)는 초박막화, 초경량화가 가능하며 간단한 용액공정 으로 향후 휨성(flexible) 디스플레이로의 응용이 가능할 것으로 기대되고 있다. 본 연구에서는 녹색 고분자 유기 발광다이오드를 제작하고, 효율을 향상 시키고자 이중 발광층을 두어 전기 광학적 특성을 평가하였다. ITO/Glass기판 위에 정공주입층으로 PEDOT:PSS [poly(3,4-ethylenedio xythiophene):poly(styrene sulfolnate)]를 발광물질로는 형광 발광물질인 PVK(poly-vinylcarbazole)와 인광 발광 물질인 Ir(ppy)$_3$[tris(2-phenylpyridine) iridium(III)]를 각각 host와 dopant로 사용하였다. 정공 차단층 및 전자 수송층 두 개의 역할로 사용 가능한 TPBI(1,3,5-tris(2-N-phenylbenzimidazolyl) benzene)를 진공 열증착법으로 막을 형성하였다. 전자주입층으로 LiF(lithium flouride)와 음극으로 Al(aluminum)을 증착하여 최종적으로 ITO/PEDOT:PSS/PVK:Ir(ppy)$_3$/TPBI/LiF/Al 구조를 갖는 녹색 형광:인광 혼합 유기 발광 다이오드를 제작하였다.

• 마이크로전자및패키징학회지
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• 제15권2호
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• pp.1-6
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• 2008

고효율 녹색 인광 유기발광다이오드를 개발하기 위해 소자 구조를 ITO/2-TNATA/NPB/TCTA/CBP:$7%Ir(ppy)_3$/BCP/SFC-137/LiF/Al로 설계 제작하고 그 전계발광 특성을 평가하였다. 소자 제작에서 발광 호스트의 두께를 $150{\AA}{\sim}350{\AA}$ 범위로 변화시켜, 전계발광 특성을 비교해 본 결과, CBP두께가 약 $300{\AA}$ 부근일 때 가장 우수한 휘도 특성이 얻어졌다 전류 효율은 CBP두께가 $300{\AA}{\sim}350{\AA}$범위일 때 거의 포화되어 최대로 나타났다. $CBP(300{\AA}):7%Ir(ppy)_3-EML$ 층을 갖는 PhOLED(phosphorescent organic light emitting diode)의 전류 밀도, 휘도, 그리고 전류 효율은 10V의 인가전압에서 각각 $40mA/cm^2,\;10000cd/m^2$, 25cd/A로 나타났다. 또한 이 소자의 최대 전류효율은 $160cd/m^2$의 휘도 상태에서 40.5cd/A로 나타났다. 발광 스펙트럼은 512nm의 중심 파장과 약 60nm의 FWHM(Full Width Half Maximum)을 나타내었으며, CIE (Commission Internationale de I'Eclairage)도표 상에서 색 좌표는 (0.28,0.63)으로 나타났다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1511-1514
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• 2009

Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.80-83
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• 2011

We have fabricated phosphorescent white organic light-emitting devices (WOLEDs) with a spin-coated poly(Nvinylcarbazole) [PVK] host layer. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic), tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and tris(2-phenyl-1-quinoline)iridium(III) [$Ir(phq)_3$], were used as the blue, green, and red guest materials, respectively. The PVK was mixed with FIrpic, $Ir(ppy)_3$, and $Ir(phq)_3$ molecules in a chlorobenzene solution and spin-coated in order to prepare the emission layer; 3-(4-biphenylyl)-4-phenyl-5-(4-tertbutylphenyl)-1,2,4-triazole (TAZ) was used as an electron transport material. The resultant device structure was ITO/PVK:FIrpic:$Ir(ppy)_3:Ir(phq)_3$/TAZ/LiF/Al. The electroluminescence, efficiency, and electrical conduction characteristics of the WOLEDs based on the doped PVK host layer were investigated. The maximum current efficiency of the three wavelength WOLED with the doped PVK host was 19.2 cd/A.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1509-1512
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• 2008

Monomer and aggregate of $Bebq_2$ give fluorescence at 492 and 511 nm at 12 K, respectively. Intense T1 emission with vibronic structure was observed from $Bebq_2$ and $Alq_3$ below 70 K by heavily doping with phosphorescent $Ir(ppy)_3$. Energy transfer from $Ir(ppy)_3$ was clarified by photoluminescence excitation spectra.

• Bulletin of the Korean Chemical Society
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• 제32권4호
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• pp.1415-1418
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• 2011