• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.2-291.2
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• 2013

Growth behavior of b-Ga2O3 nanowires (NWs) on sapphire(0001) substrates during radio-frequency magnetron sputtering is reported. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ${\sim}450^{\circ}C$. The b-Ga2O3 NWs were grown through the self-catalytic vapor-liquid-solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the room temperature photoluminescence properties of as-grown and annealed b-Ga2O3 NW samples were investigated.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.97-98
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• 2002

$Ga_2O_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about $10{\sim}200nm$ width and $10{\sim}50nm$ thickness. Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. In cathodoluminescence(CL), the peak energy of near band-edge(NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.482-488
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• 2004

$SiO_2$ nanowires were synthesized using the vapor evaporation method. Grown nanowires had a different shapes by kind of substrates. Diameters and lengths of the nanowires increased with increasing growth temperature and time. Mean diameters and lengths of $SiO_2$ nanowire were different by kind of substrates. These variations were attributed to nanowire densities on the substrates. The kind of substrates affected microstructure and PL properties of grown nanowires. In case of $Al_{2}O_3$ and quartz substrates, additional $O_2$ were supported during growth stages, and made a nucleation site. Therefore relative narrow nanowire was grown on $Al_{2}O_3$ and quartz substrates. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 and 420nm. however in case of quartz substrates, mean peak positioned at 370nm. These peak shift was contributed to the size and substrate effects.

• Nano
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• v.13 no.11
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• pp.1850125.1-1850125.12
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• 2018

To reduce the imbalance of impedance matching between the magnetic metal nanowires and free space, $Fe/TiO_2$ core/shell nanowire arrays with different diameters were fabricated in the templates of anodic aluminum oxide membranes by electrodeposition. The influences of the microstructure on the microwave absorption properties of the $Fe/TiO_2/Al_2O_3$ composites were studied by the transmission/reflection waveguide method. It was demonstrated experimentally that both the interfacial polarization and the diameter of the $Fe/TiO_2$ core/shell nanowires have critical effects on the microwave absorption properties. We also investigated the angle dependence of the microwave absorption properties. Due to the interfacial polarization and associated relaxation, the $Fe/TiO_2/Al_2O_3$ composites exhibited optimal microwave absorption properties when microwave propagation direction was accordant with the axis of the nanowires. Finally, we managed to obtain an optimal reflection loss of below -10 dB (90% absorption) over 10.2-14.8 GHz, with a thickness of 3.0 mm and the minimum value of -39.4 dB at 11.7 GHz.

• Bulletin of the Korean Chemical Society
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• v.25 no.9
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• pp.1341-1345
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• 2004

We developed a novel synthesis strategy of titania nanowire arrays by employing simple hydrothermal reaction and ion-exchange reaction techniques. Hydrothermal reactions of metallic titanium powder with $H_2O_2$ in a 10 M NaOH solution produced a new sodium titanate compound, $Na_2Ti_6O_{13}{\cdot}xH_2O$ (x~4.2), as arrays of nanowires of lengths up to 1 mm. Acid-treatment followed by calcination of this material produced arrays of highly crystalline anatase nanowires as evidenced by x-ray diffraction, Raman spectroscopy, and transmission electron microscopy studies. In both cases of sodium titanate and anatase, the nanowires have exceptionally large aspect ratios of 10,000 or higher, and they form arrays over a large area of $1.5 {\times} 3 cm^2$. Observations on the reaction products with varied conditions indicate that the array formation requires simultaneously controlled formation and crystal growth rates of the $Na_2Ti_6O_{13}{\cdot}xH_2O$ phase.

• Journal of Electrochemical Science and Technology
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• v.6 no.3
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• pp.81-87
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• 2015

This study introduces a facile strategy to prepare metal oxide/conducting polymer nanocomposites that may have promising applications in energy storage devices. Ploy aniline/nano wire manganese dioxide (PANI/NwMnO₂) was synthesized by cyclic voltammetry on glassy carbon electrode. Morphology and structure of the composite, pure PANI, MnO₂ nanowires were fully characterized using XRD and SEM analysis. Electrochemical studies shows excellent synergistic effect between PANI and MnO₂ nanowires which results in its capacitance increase and cycle stability against PANI electrode. Specific capacitances of PANI/NwMnO₂ and PANI were 456 and 190 F/g respectively. The electrochemical performance of electrodes studied using cyclic voltammetry, Galvanostatic charge/discharge and impedance spectroscopy.

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.59-65
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• 2005

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.