• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.73.1-73.1
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• 2010

For the successful cold starting of a fuel cell engine, either internal of external heat supply must be made to overcome the formation of ice from water below the freezing point of water. In the present study, switchable vanadium oxide compounds as variable temperature-electrical resistance materials onto the surface of flat metallic bipolar plates have been prepared by a dip-coating technique via an aqueous sol-gel method. Subsequently, the chemical composition and micro-structure of the polycrystalline solid thin films were analyzed by X-ray diffraction, X-ray fluorescence spectroscopy, and field emission scanning electron microscopy. In addition, it was carefully measured electrical resistance hysteresis loop over a temperature range from $-20^{\circ}C$ to $80^{\circ}C$ using the four-point probe method. The experimental results revealed that the thin films was mainly composed of Karelianite $V_2O_3$ which acts as negative temperature coefficient materials. Also, it was found that thermal dissipation rate of the vanadium oxide thin films partially satisfy about 50% saving of the substantial amount of energy required for ice melting at $-20^{\circ}C$. Moreover, electrical resistances of the vanadium-based materials converge on an extremely small value similar to that of pure flat metallic bipolar plates at higher temperature, i.e. $T{\geq}40^{\circ}C$. As a consequence, experimental studies proved that it is possible to apply the variable temperature-electrical resistance material based on vanadium oxides for the cold starting enhancement of a fuel cell vehicle and minimize parasitic power loss and eliminate any necessity for external equipment for heat supply in freezing conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.809-814
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• 2014

Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from $[(Ni_{0.30}Co_{0.33}Mn_{0.37})_{1-x}Cu_x]_3O_4$ ($0.1{\leq}x{\leq}0.2$) solutions and then annealed at $400^{\circ}C$ for 1 h in argon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below $50^{\circ}C$. Typically, the resistivity of $127{\Omega}{\cdot}cm$ and TCR of -5.69%/K at $30^{\circ}C$ were obtained for x=0.1 films with deposition time of 1 min annealed at $400^{\circ}C$ for 1 h in argon.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.31 no.3
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• pp.199-218
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• 2005

Purpose of Study: Peripheral nerve regeneration depends on neurotrophism of distal nerve stump, recovery potential of neuron, supporting cell like Schwann cell and neurotrophic factors such as BDNF. Peripheral nerve regeneration can be enhanced by the conduit which connects the both sides of transected nerve. The conduit maintains the effects of neurotrophism and BDNF produced by Schwann cells which can be made by gene therapy. In this study, we tried to enhance the peripheral nerve regeneration by using calcium phosphate coated porous conduit and BDNF-Adenovirus infected Schwann cells in sciatic nerve of rats. Materials and Methods: Microporous filter which permits the tissue fluid essential for nerve regeneration and does not permit infiltration of fibroblasts, was made into 2mm diameter and 17mm length conduit. Then it was coated with calcium phosphate to improve the Schwann cell adhesion and survival. The coated filter was evaluated by SEM examination and MTT assay. For effective allogenic Schwann cell culture, dorsal root ganglia of 1-day old rat were extracted and treated with enzyme and antimitotic Ara-C. Human BDNF cDNA was obtained from cDNA library and amplified using PCR. BDNF gene was inserted into adenovirus shuttle vector pAACCMVpARS in which E1 was deleted. We infected the BDNF-Ad into 293 human mammary kidney cell-line and obtained the virus plaque 2 days later. RT-PCR was performed to evaluate the secretion of BDNF in infected Schwann cells. To determine the most optimal m.o.i of BDNF-Ad, we infected the Schwann cells with LacZ adenovirus in 1, 20, 50, 75, 100, 250 m.o.i for 2 hours and stained with ${\beta}$-galactosidase. Rats(n=24) weighing around 300g were used. Total 14mm sciatic nerve defect was made and connected with calcium phosphate coated conduits. Schwann cells$(1{\times}10^6)$ or BDNF-Ad infected Schwann cells$(1{\times}10^6)$ were injected in conduit and only media(MEM) was injected in control group. Twelve weeks after surgery, degree of nerve regeneration was evaluated with gait analysis, electrophysiologic measurements and histomorphometric analysis. Results: 1. Microporous Millipore filter was effective conduit which permitted the adhesion of Schwann cells and inhibited the adhesion of fibroblast. We could enhance the Schwann cell adhesion and survival by coating Millipore filter with calcium phosphate. 2. Schwann cell culture technique using repeated treatment of Ara-C and GDNF was established. The mean number of Schwann cells obtained 1 and 2 weeks after the culture were $1.54{\pm}4.0{\times}10^6$ and $9.66{\pm}9.6{\times}10^6$. 3. The mRNA of BDNF in BDNF-Ad infected Schwann cells was detected using RT-PCR. In Schwann cell $0.69\;{\mu}g/{\mu}l$ of DNA was detected and in BDNF-Adenovirus transfected Schwann cell $0.795\;{\mu}g/{\mu}l$ of DNA was detected. The most effective infection concentration was determined by LacZ Adenovirus and 75 m.o.i was found the most optimal. Conclusion: BDNF-Ad transfected Schwann cells successfully regenerated the 14mm nerve gap which was connected with calcium phosphate coated Millipore filter. The BDNF-Ad group showed better results compared with Schwann cells only group and control group in aspect to sciatic function index, electrophysiologic measurements and histomorphometric analysis.

• Journal of the Korean Chemical Society
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• v.50 no.2
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• pp.163-177
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• 2006

Alpha Nickel hydroxide samples have been synthesized by electrodeposition on platinum and nickel substrates at current densities of 1, 5, 6, 7 and 10 mAcm？2 at a controlled temperature of 30.00 oC from Ni(NO3)2 bath. Platinum substrate shows a tendency to incorporate less nitrate ions with increase in current density thus producing less hydroxy-deficient nickel hydroxide layers. On the whole the interlayer distance (d003) is found to be inversely proportional to the amount of nitrate ions incorporated in-between the lattice. For the first time we have observed a decrease in lattice spacing with increase in concentration of intercalant (anions) and the reason for lattice contraction is attributed to the columbic attractive forces exerted by the oppositely charged nitrate ion and positively charged slabs. The Infrared spectra of the samples with expanded interlayers show two types of OH vibrations corresponding to hydrogen bonded and non-hydrogen bonded OH groups whereas the contracted interlayers show only hydrogen-boded OH groups. Although the faradaic efficiency is found to increase with increase in applied current there is a local minimum at 6.0 mAcm？2 current density on both platinum and nickel substrates. In this manuscript, GC-MS data is provided which clearly demonstrates the electrodeposited nickel hydroxide sample to consist of huge amount of carbonate ions although the electrolyte solution in nickel nitrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.615-615
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• 2013

탄소나노튜브(carbon nanotubes; CNT)는 강철보다 10~100배 견고할 뿐만 아니라 영률과 탄성률 은 각각 1.8 TPa, 1.3 TPa에 달하는 매우 우수한 기계적 강도를 지니고 있으며, 구리보다 좋은 전기 전도도와 다이아몬드의 2배에 이르는 열전도도를 지닌 물질이다. 이러한 탄소나노튜브의 우수한 특성을 이용하여 나노섬유, 고분자-탄소나노튜브의 고기능 복합체, 나노소자, 전계방출원(field emitter), 가스센서 등 다양한 분야로의 활용을 위한 연구가 진행되고 있다. 특히, 수백 ${\mu}m$ 이상의 길이로 수직 성장된 탄소나노튜브(VA-CNTs)의 합성은 길이 대 직경의 비(aspect ratio)가 비약적으로 증가하여 앞서 언급한 분야로의 활용이 더욱 유리하며, 그 중에서도 대량 생산, 나노섬유 및 나노복합체로서의 활용에 극히 유용하다. 최근에는 열 화학기상증착(thermal chemical vapor deposition; TCVD)법을 이용하여 탄소나노튜브의 구조를 제어하는 연구들이 많이 보고되고 있다. 열 화학기상증착을 이용한 수직 정렬된 탄소나노튜브의 합성에서 합성조건의 변화는 탄소나노튜브의 길이, 벽의 수, 직경, 결정성 등 구조에 큰 영향을 미친다. 탄소나노튜브는 이러한 구조에 따 라 물리적 특성이 달라지기 때문에 다양한 분야로의 응용을 위해서는 합성에 대한 근본적인 이해 가 절실히 요구된다. 본 연구에서는 열 화학기상증착법을 이용한 합성에서 성장압력의 변화에 따른 탄소나노튜브의 구조적 특성을 조사하였다. 성장압력의 변화는 탄소나노튜브의 밀도, 길이, 결정성에 큰 영향을 미치는 것을 주사전자현미경과 라만분광법을 이용하여 확인하였다. 이러한 결과 는 탄소나노튜브 박막(CNT forest)의 가장자리(edge)에 비정질 탄소(amorphous carbon)의 흡착으로 인한 나노튜브사이의 간격(intertube distance)이 좁아짐에 따른 가스공급 차단 효과로 설명이 가능 하다. 또한, 마이크로웨이브 플라즈마 화학기상증착법을 이용하여 탄소나노튜브를 합성하였다. 합성과정 중 산소(O2)를 주입 하였을 경우, 그렇지 않은 경우에 비하여 성장 속도가 증가하여 3시간 합성 시 2 mm가 넘는 수직 정렬된 탄소나노튜브를 합성 할 수 있었다. 이러한 결과는 과잉 공급 되어 탄소나노튜브로 합성되지 못하고 촉매금속의 표면과 탄소나노튜브의 벽에 비정질의 형태로 붙어있는 탄소 원자들을 추가 주입해 준 산소에 의하여 CO 또는 CO2 형태로 제거해 줌으로써 활성화된 촉매금속의 반응 시간을 향상 시켜주어 탄소공급이 원활하게 이루어졌기 때문이라 생각된다.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.50-57
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• 2022

Ti-In-Zn-O (TIZO)/Ag/TIZO multilayer transparent electrodes were prepared on glass substrates at room temperature using RF/DC magnetron sputtering. Obtained multilayer structure comprising TIZO/Ag/TIZO (10 nm/10 nm/40 nm) with the total thickness of 60 nm showed a transmittance of 86.5% at 650 nm and a sheet resistance of 8.1 Ω/□. The multilayer films were expected to be applicable for use in energy-saving smart window based on polymer-dispersed liquid crystal (PDLC) because of their transmittance properties to effectively block infrared rays (heat rays). We investigated the effects of the content ratio of prepolymer, the thickness of the PDLC coating layer, and the ultraviolet (UV) light intensity on electro-optical properties, and the surface morphology of polyester acrylate-based PDLC systems using new TIZO/Ag/TIZO transparent conducting electrodes. A PDLC cell with a thickness of 15 ㎛ PDLC layer photocured at an UV intensity of 1.5 mW/cm² exhibited good driving voltage, favorable on-state transmittance, and excellent off-haze. The LC droplets formed on the surface of the polymer matrix of the PDLC composite had a size range of 1 to 3 ㎛ capable of efficiently scattering incident light. Also, the PDLC-based smart window manufactured using TIZO/Ag/TIZO multi-layered transparent electrodes in this study exhibited a light brown, which will have an advantage in terms of aesthetics.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.