• The Journal of the Petrological Society of Korea
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• v.11 no.3_4
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• pp.200-213
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• 2002

The Andong granitoid batholith represents five temporally distinct episodes (phases) of igneous activity. The batholith represents a plutonic complex of five pulsatively emplaced distinct intrusive multiphases. The petrochemical data show that the plutons fall into calc-alkaline series except for the Yean pluton, and plot within the diaenostic range for I-type origin and continental arc orogenic tectonic setting. Each pluton reveals systematic compositional variations of major and trace elements with $SiO_2$ or MgO, but different variation trends for some elements and considerably different REE patterns. Thus discontinuous, inconsistent variations in the elements indicate that the five plutons can not be explained by simple fractional crystallization from the same primary magma, but were intruded and solidified from the independent magmas of chemically heterogeneous origin. In the Andong, Dosan and Pungsan plutons, high values of molar CaO/(MgO+$FeO^{t}$ ) combined with low $Al_2$$O_3$/(MgO+$FeO^{t}$ ) and $K_2$O$Na_2$O ratios suggest a magma originated by dehydration melting of a metabasaltic to metatonalitic protolith. Whereas the Imha pluton show similar values of CaO/(MgO+$FeO^{t}$ ), but significantly higher ratios of $Al_2$$O_3$/(MgO+$FeO^{t}$ ) and $K_2$O$Na_2$O implying to a metagreywacke protolith.

• Economic and Environmental Geology
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• v.49 no.5
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• pp.389-410
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• 2016

Wide ranges of fission-track (FT) ages were obtained from the Jurassic granite batholith in Jeonju-Gimje-Jeongeup area, southwestern Okcheon Belt: sphene=158~70 Ma; zircon=127~71 Ma; apatite=72~46 Ma. Thermochronological analyses based on undisturbed primary cooling and reset or partially-reduced FT ages, and some track-length data reveal complicated thermal histories of the granite. The overall cooling of the batholith is characterized by a relatively rapid earlier-cooling (${\sim}20^{\circ}/Ma$) to $300^{\circ}C$ isotherm since its crystallization and a very slow later-cooling ($2.0{\sim}1.5^{\circ}/Ma$) through the $300^{\circ}C-200^{\circ}C-100^{\circ}C$ isotherms to the present surface temperature. It is indicated that the large part of Jurassic granitic body experienced different level of elevated temperatures at least above $170^{\circ}C$ (maximum>$330^{\circ}C$) by a series of igneous activities in late Cretaceous. Consistent FT zircon ages from duplicate measurements for two sites of later igneous bodies define their formation ages: e.g., quartz porphyry=$73{\pm}3Ma$; diorite=$73{\pm}2Ma$; rhyolite=$72{\pm}3Ma$; feldspar porphyry=$78{\pm}4Ma$ (total weighted average=$73{\pm}3Ma$). Intrusions of these later igneous bodies and pegmatitic dyke swarms might play important roles in later thermal rise over the study area including hot-spring districts (e.g., Hwasim, Jukrim, Mogyokri, Hoebong etc.). On the basis of an assumption that the latercooling of granite batholith was essentially controlled by the denudation of overlying crust, the uplift since early Cretaceous was very slow with a mean rate of ~0.05 mm/year (i.e., ~50 m/Ma). Estimates of total uplifts since 100 Ma, 70 Ma and 40 Ma to present-day are ~5 km, ~3.5 km and ~2 km, respectively. The consistent values of total uplifts from different locations may suggest a regional plateau uplift with a uniform rate over the whole granitic body.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.